MSRT200140(A)

MSRT200140(A) GeneSiC Semiconductor


msrt200120a_thru_msrt200160a.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 200A 3TOWER
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Technische Details MSRT200140(A) GeneSiC Semiconductor

Description: DIODE MODULE GP 1.4KV 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Three Tower, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

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MSRT200140A MSRT200140A Hersteller : GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar