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MBR2X060A045 MBR2X060A045 GeneSiC Semiconductor mbr2x060a045.pdf Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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MBR2X080A045 MBR2X080A045 GeneSiC Semiconductor mbr2x080a045.pdf Description: DIODE MOD SCHOTT 45V 80A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
1+90.92 EUR
10+78.9 EUR
25+74.57 EUR
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MBR2X080A100 MBR2X080A100 GeneSiC Semiconductor mbr2x080a100.pdf Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR2X100A180 MBR2X100A180 GeneSiC Semiconductor mbr2x100a180.pdf Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
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MBR2X120A045 MBR2X120A045 GeneSiC Semiconductor mbr2x120a045.pdf Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
1+86.35 EUR
10+75.14 EUR
25+71.1 EUR
50+68.19 EUR
100+65.39 EUR
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MUR2X030A02 MUR2X030A02 GeneSiC Semiconductor mur2x030a02.pdf Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MUR2X030A06 MUR2X030A06 GeneSiC Semiconductor mur2x030a06.pdf Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MUR2X030A10 MUR2X030A10 GeneSiC Semiconductor mur2x030a10.pdf Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MUR2X030A12 MUR2X030A12 GeneSiC Semiconductor mur2x030a12.pdf Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MUR2X060A02 MUR2X060A02 GeneSiC Semiconductor mur2x060a02.pdf Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+79.39 EUR
10+68.41 EUR
25+64.48 EUR
50+61.65 EUR
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MUR2X060A04 MUR2X060A04 GeneSiC Semiconductor mur2x060a04.pdf Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MUR2X060A06 MUR2X060A06 GeneSiC Semiconductor mur2x060a06.pdf Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MUR2X100A02 MUR2X100A02 GeneSiC Semiconductor mur2x100a02.pdf Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MUR2X100A04 MUR2X100A04 GeneSiC Semiconductor mur2x100a04.pdf Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
1+88.14 EUR
10+76.36 EUR
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GBPC2504W GBPC2504W GeneSiC Semiconductor gbpc25005t.pdf Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
10+5.15 EUR
25+4.7 EUR
100+4.1 EUR
250+3.74 EUR
500+3.49 EUR
Mindestbestellmenge: 3
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GBPC2508W GBPC2508W GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.3 EUR
10+5.01 EUR
25+4.58 EUR
100+3.99 EUR
250+3.64 EUR
500+3.4 EUR
1000+3.17 EUR
Mindestbestellmenge: 3
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GBPC3508W GBPC3508W GeneSiC Semiconductor gbpc3506t.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.93 EUR
10+5.56 EUR
25+5.09 EUR
100+4.46 EUR
250+4.09 EUR
500+3.83 EUR
Mindestbestellmenge: 3
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FST100150 FST100150 GeneSiC Semiconductor fst100150.pdf Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
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FST100200 FST100200 GeneSiC Semiconductor fst100150_thru_fst100200.pdf Description: DIODE SCHOTTKY 200V 50A TO249AB
Produkt ist nicht verfügbar
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FST120150 FST120150 GeneSiC Semiconductor fst120150.pdf Description: DIODE SCHOTTKY 150V 60A TO249AB
Produkt ist nicht verfügbar
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FST120200 FST120200 GeneSiC Semiconductor fst120150_thru_fst120200.pdf Description: DIODE SCHOTTKY 200V 60A TO249AB
Produkt ist nicht verfügbar
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FST160150 FST160150 GeneSiC Semiconductor fst160150_thru_fst160200.pdf Description: DIODE SCHOTTKY 150V 80A TO249AB
Produkt ist nicht verfügbar
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FST160200 FST160200 GeneSiC Semiconductor fst160150.pdf Description: DIODE SCHOTTKY 200V 80A TO249AB
Produkt ist nicht verfügbar
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FST16020L FST16020L GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 80A TO249AB
Produkt ist nicht verfügbar
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FST16030L FST16030L GeneSiC Semiconductor fst16030l.pdf Description: DIODE SCHOTTKY 30V 80A TO249AB
Produkt ist nicht verfügbar
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FST16035L FST16035L GeneSiC Semiconductor fst16035l.pdf Description: DIODE SCHOTTKY 35V 80A TO249AB
Produkt ist nicht verfügbar
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FST16040L FST16040L GeneSiC Semiconductor fst16040l.pdf Description: DIODE SCHOTTKY 40V 80A TO249AB
Produkt ist nicht verfügbar
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FST16045L FST16045L GeneSiC Semiconductor fst16045l.pdf Description: DIODE SCHOTTKY 45V 80A TO249AB
Produkt ist nicht verfügbar
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GA040TH65-227SP GA040TH65-227SP GeneSiC Semiconductor GA040TH65.pdf Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
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GA060TH65-227SP GA060TH65-227SP GeneSiC Semiconductor GA060TH65.pdf Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
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GA080TH65-227SP GA080TH65-227SP GeneSiC Semiconductor GA080TH65.pdf Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Produkt ist nicht verfügbar
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GBPC1510T GBPC1510T GeneSiC Semiconductor gbpc1506t.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2510T GBPC2510T GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3510T GBPC3510T GeneSiC Semiconductor gbpc3510t.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC50005W GBPC50005W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBPC5001W GBPC5001W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC5002W GBPC5002W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBPC5008W GBPC5008W GeneSiC Semiconductor gbpc5006t.pdf Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GKN130/18 GKN130/18 GeneSiC Semiconductor gkn13004.pdf Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
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GKN240/18 GKN240/18 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
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GKR130/18 GKR130/18 GeneSiC Semiconductor gkr13004.pdf Description: DIODE GP 1.8KV 165A DO205AA
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GKR240/18 GKR240/18 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
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KBP203G KBP203G GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1501W KBPC1501W GeneSiC Semiconductor kbpc15005t.pdf Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1504W KBPC1504W GeneSiC Semiconductor kbpc15005t.pdf Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1508W KBPC1508W GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510T KBPC1510T GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510W KBPC1510W GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC2510T KBPC2510T GeneSiC Semiconductor kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC3510T KBPC3510T GeneSiC Semiconductor kbpc3506t.pdf Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC50005W KBPC50005W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5002W KBPC5002W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5004W KBPC5004W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
M3P75A-40 M3P75A-40 GeneSiC Semiconductor m3p75a-40_thru_m3p75a-60.pdf Description: DIODE MODULE STD 75A 400V 3PH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120150CT MBR120150CT GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120150CTR MBR120150CTR GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120200CT MBR120200CT GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120200CTR MBR120200CTR GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200150CT GeneSiC Semiconductor mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200150CTR GeneSiC Semiconductor mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A045 mbr2x060a045.pdf
MBR2X060A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A045 mbr2x080a045.pdf
MBR2X080A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 80A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+90.92 EUR
10+78.9 EUR
25+74.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A100 mbr2x080a100.pdf
MBR2X080A100
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A180 mbr2x100a180.pdf
MBR2X100A180
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X120A045 mbr2x120a045.pdf
MBR2X120A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+86.35 EUR
10+75.14 EUR
25+71.1 EUR
50+68.19 EUR
100+65.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A02 mur2x030a02.pdf
MUR2X030A02
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A06 mur2x030a06.pdf
MUR2X030A06
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A10 mur2x030a10.pdf
MUR2X030A10
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A12 mur2x030a12.pdf
MUR2X030A12
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X060A02 mur2x060a02.pdf
MUR2X060A02
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+79.39 EUR
10+68.41 EUR
25+64.48 EUR
50+61.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X060A04 mur2x060a04.pdf
MUR2X060A04
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X060A06 mur2x060a06.pdf
MUR2X060A06
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X100A02 mur2x100a02.pdf
MUR2X100A02
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X100A04 mur2x100a04.pdf
MUR2X100A04
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+88.14 EUR
10+76.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2504W gbpc25005t.pdf
GBPC2504W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
10+5.15 EUR
25+4.7 EUR
100+4.1 EUR
250+3.74 EUR
500+3.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2508W gbpc2506t.pdf
GBPC2508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
10+5.01 EUR
25+4.58 EUR
100+3.99 EUR
250+3.64 EUR
500+3.4 EUR
1000+3.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3508W gbpc3506t.pdf
GBPC3508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.93 EUR
10+5.56 EUR
25+5.09 EUR
100+4.46 EUR
250+4.09 EUR
500+3.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FST100150 fst100150.pdf
FST100150
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST100200 fst100150_thru_fst100200.pdf
FST100200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 50A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST120150 fst120150.pdf
FST120150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST120200 fst120150_thru_fst120200.pdf
FST120200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST160150 fst160150_thru_fst160200.pdf
FST160150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST160200 fst160150.pdf
FST160200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16020L
FST16020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16030L fst16030l.pdf
FST16030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16035L fst16035l.pdf
FST16035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16040L fst16040l.pdf
FST16040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16045L fst16045l.pdf
FST16045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GA040TH65-227SP GA040TH65.pdf
GA040TH65-227SP
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GA060TH65-227SP GA060TH65.pdf
GA060TH65-227SP
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GA080TH65-227SP GA080TH65.pdf
GA080TH65-227SP
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC1510T gbpc1506t.pdf
GBPC1510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2510T gbpc2506t.pdf
GBPC2510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3510T gbpc3510t.pdf
GBPC3510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC50005W gbpc50005t.pdf
GBPC50005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5001W gbpc50005t.pdf
GBPC5001W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5002W gbpc50005t.pdf
GBPC5002W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5008W gbpc5006t.pdf
GBPC5008W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GKN130/18 gkn13004.pdf
GKN130/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GKN240/18 gkn24004.pdf
GKN240/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GKR130/18 gkr13004.pdf
GKR130/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GKR240/18 gkr24004_thru_gkr24018.pdf
GKR240/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP203G
KBP203G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1501W kbpc15005t.pdf
KBPC1501W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1504W kbpc15005t.pdf
KBPC1504W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1508W kbpc1506t.pdf
KBPC1508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510T kbpc1506t.pdf
KBPC1510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510W kbpc1506t.pdf
KBPC1510W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC2510T kbpc2506t.pdf
KBPC2510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC3510T kbpc3506t.pdf
KBPC3510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC50005W kbpc50005t.pdf
KBPC50005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5002W kbpc50005t.pdf
KBPC5002W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5004W kbpc50005t.pdf
KBPC5004W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
M3P75A-40 m3p75a-40_thru_m3p75a-60.pdf
M3P75A-40
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE STD 75A 400V 3PH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120150CT mbr120150ct.pdf
MBR120150CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120150CTR mbr120150ct.pdf
MBR120150CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120200CT mbr120150ct.pdf
MBR120200CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120200CTR mbr120150ct.pdf
MBR120200CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200150CT mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
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MBR200150CTR mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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