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S85Y GeneSiC Semiconductor s85v_thru_s85yr.pdf Description: DIODE GEN PURP 1.6KV 85A DO5
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S85YR S85YR GeneSiC Semiconductor s85v.pdf Description: DIODE GEN PURP REV 1.6KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SD51 GeneSiC Semiconductor sd51_thru_sd51r.pdf Description: DIODE SCHOTTKY 45V 60A DO5
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SD51R GeneSiC Semiconductor sd51_thru_sd51r.pdf Description: DIODE SCHOTTKY REV 45V DO5
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W005M GeneSiC Semiconductor W005M%7EW10M.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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W01M W01M GeneSiC Semiconductor W005M~W10M.pdf Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
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W02M W02M GeneSiC Semiconductor W005M%7EW10M.pdf Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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W04M GeneSiC Semiconductor W005M%7EW10M.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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W06M GeneSiC Semiconductor W06M-10M.pdf description Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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W08M GeneSiC Semiconductor W06M-10M.pdf description Description: BRIDGE RECT 1PHASE 800V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GA50JT17-247 GA50JT17-247 GeneSiC Semiconductor GA50JT17-247.pdf Description: TRANS SJT 1.7KV 100A
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GA03IDDJT30-FR4 GA03IDDJT30-FR4 GeneSiC Semiconductor GA03IDDJT30-FR4.pdf Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
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GA15IDDJT22-FR4 GeneSiC Semiconductor Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
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GA100SBJT12-FR4 GA100SBJT12-FR4 GeneSiC Semiconductor GA100SBJT12-FR4.pdf Description: BOARD EVAL DBL PULSE
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GA05JT01-46 GA05JT01-46 GeneSiC Semiconductor GA05JT01-46.pdf Description: TRANS SJT 100V 9A
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GA05JT03-46 GA05JT03-46 GeneSiC Semiconductor GA05JT03-46.pdf Description: TRANS SJT 300V 9A
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GA50JT06-258 GeneSiC Semiconductor GA50JT06-258.pdf Description: TRANS SJT 600V 100A
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GB02SHT01-46 GB02SHT01-46 GeneSiC Semiconductor GB02SHT01-46.pdf Description: DIODE SIL CARBIDE 100V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GB02SHT03-46 GB02SHT03-46 GeneSiC Semiconductor GB02SHT03-46.pdf Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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GB02SHT06-46 GB02SHT06-46 GeneSiC Semiconductor GB02SHT06-46.pdf Description: DIODE SIL CARBIDE 600V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GAP05SLT80-220 GAP05SLT80-220 GeneSiC Semiconductor GAP05SLT80-220.pdf Description: DIODE SCHOTTKY 8KV 50MA AXIAL
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GA01PNS150-220 GA01PNS150-220 GeneSiC Semiconductor GA01PNS150-220.pdf Description: RF DIODE PIN 15000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Part Status: Active
Current - Max: 1 A
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GA01PNS80-220 GA01PNS80-220 GeneSiC Semiconductor GA01PNS80-220.pdf Description: RF DIODE PIN 8000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2 A
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GB02SLT12-252 GB02SLT12-252 GeneSiC Semiconductor GB02SLT12-252.pdf Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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MBR2X030A045 MBR2X030A045 GeneSiC Semiconductor mbr2x030a045.pdf Description: DIODE MOD SCHOTT 45V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MBR2X030A100 MBR2X030A100 GeneSiC Semiconductor mbr2x030a100.pdf Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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MBR2X050A200 MBR2X050A200 GeneSiC Semiconductor mbr2x050a200.pdf Description: DIODE SCHOTTKY 200V 100A SOT227
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MBR2X060A045 MBR2X060A045 GeneSiC Semiconductor mbr2x060a045.pdf Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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MBR2X080A045 MBR2X080A045 GeneSiC Semiconductor mbr2x080a045.pdf Description: DIODE MOD SCHOTT 45V 80A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MBR2X080A100 MBR2X080A100 GeneSiC Semiconductor mbr2x080a100.pdf Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR2X100A180 MBR2X100A180 GeneSiC Semiconductor mbr2x100a180.pdf Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
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MBR2X120A045 MBR2X120A045 GeneSiC Semiconductor mbr2x120a045.pdf Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MUR2X030A02 MUR2X030A02 GeneSiC Semiconductor mur2x030a02.pdf Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MUR2X030A06 MUR2X030A06 GeneSiC Semiconductor mur2x030a06.pdf Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MUR2X030A10 MUR2X030A10 GeneSiC Semiconductor mur2x030a10.pdf Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MUR2X030A12 MUR2X030A12 GeneSiC Semiconductor mur2x030a12.pdf Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MUR2X060A02 MUR2X060A02 GeneSiC Semiconductor mur2x060a02.pdf Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MUR2X060A04 MUR2X060A04 GeneSiC Semiconductor mur2x060a04.pdf Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MUR2X060A06 MUR2X060A06 GeneSiC Semiconductor mur2x060a06.pdf Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MUR2X100A02 MUR2X100A02 GeneSiC Semiconductor mur2x100a02.pdf Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MUR2X100A04 MUR2X100A04 GeneSiC Semiconductor mur2x100a04.pdf Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
auf Bestellung 12 Stücke:
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GBPC2504W GBPC2504W GeneSiC Semiconductor gbpc25005t.pdf Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1244 Stücke:
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3+7.04 EUR
10+5.60 EUR
25+5.12 EUR
100+4.46 EUR
250+4.07 EUR
500+3.80 EUR
1000+3.55 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2508W GBPC2508W GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1962 Stücke:
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3+6.81 EUR
10+5.42 EUR
25+4.95 EUR
100+4.31 EUR
250+3.94 EUR
500+3.68 EUR
1000+3.43 EUR
Mindestbestellmenge: 3
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GBPC3508W GBPC3508W GeneSiC Semiconductor gbpc3506t.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.15 EUR
10+5.73 EUR
25+5.25 EUR
100+4.61 EUR
250+4.22 EUR
500+3.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FST100150 FST100150 GeneSiC Semiconductor fst100150.pdf Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST100200 FST100200 GeneSiC Semiconductor fst100150_thru_fst100200.pdf Description: DIODE SCHOTTKY 200V 50A TO249AB
Produkt ist nicht verfügbar
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FST120150 FST120150 GeneSiC Semiconductor fst120150.pdf Description: DIODE SCHOTTKY 150V 60A TO249AB
Produkt ist nicht verfügbar
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FST120200 FST120200 GeneSiC Semiconductor fst120150_thru_fst120200.pdf Description: DIODE SCHOTTKY 200V 60A TO249AB
Produkt ist nicht verfügbar
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FST160150 FST160150 GeneSiC Semiconductor fst160150_thru_fst160200.pdf Description: DIODE SCHOTTKY 150V 80A TO249AB
Produkt ist nicht verfügbar
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FST160200 FST160200 GeneSiC Semiconductor fst160150.pdf Description: DIODE SCHOTTKY 200V 80A TO249AB
Produkt ist nicht verfügbar
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FST16020L FST16020L GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16030L FST16030L GeneSiC Semiconductor fst16030l.pdf Description: DIODE SCHOTTKY 30V 80A TO249AB
Produkt ist nicht verfügbar
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FST16035L FST16035L GeneSiC Semiconductor fst16035l.pdf Description: DIODE SCHOTTKY 35V 80A TO249AB
Produkt ist nicht verfügbar
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FST16040L FST16040L GeneSiC Semiconductor fst16040l.pdf Description: DIODE SCHOTTKY 40V 80A TO249AB
Produkt ist nicht verfügbar
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FST16045L FST16045L GeneSiC Semiconductor fst16045l.pdf Description: DIODE SCHOTTKY 45V 80A TO249AB
Produkt ist nicht verfügbar
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GA040TH65-227SP GA040TH65-227SP GeneSiC Semiconductor GA040TH65.pdf Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
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GA060TH65-227SP GA060TH65-227SP GeneSiC Semiconductor GA060TH65.pdf Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
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GA080TH65-227SP GA080TH65-227SP GeneSiC Semiconductor GA080TH65.pdf Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Produkt ist nicht verfügbar
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GBPC1510T GBPC1510T GeneSiC Semiconductor gbpc1506t.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2510T GBPC2510T GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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S85Y s85v_thru_s85yr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.6KV 85A DO5
Produkt ist nicht verfügbar
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S85YR s85v.pdf
S85YR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.6KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.97 EUR
10+21.02 EUR
25+19.63 EUR
100+17.71 EUR
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SD51 sd51_thru_sd51r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A DO5
Produkt ist nicht verfügbar
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SD51R sd51_thru_sd51r.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V DO5
Produkt ist nicht verfügbar
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W005M W005M%7EW10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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W01M W005M~W10M.pdf
W01M
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 1.5A WOM
Produkt ist nicht verfügbar
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W02M W005M%7EW10M.pdf
W02M
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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W04M W005M%7EW10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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W06M description W06M-10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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W08M description W06M-10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 1.5A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GA50JT17-247 GA50JT17-247.pdf
GA50JT17-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1.7KV 100A
Produkt ist nicht verfügbar
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GA03IDDJT30-FR4 GA03IDDJT30-FR4.pdf
GA03IDDJT30-FR4
Hersteller: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
Produkt ist nicht verfügbar
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GA15IDDJT22-FR4
Hersteller: GeneSiC Semiconductor
Description: BOARD GATE DRIVER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Isolated
Produkt ist nicht verfügbar
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GA100SBJT12-FR4 GA100SBJT12-FR4.pdf
GA100SBJT12-FR4
Hersteller: GeneSiC Semiconductor
Description: BOARD EVAL DBL PULSE
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GA05JT01-46 GA05JT01-46.pdf
GA05JT01-46
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 100V 9A
auf Bestellung 94 Stücke:
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GA05JT03-46 GA05JT03-46.pdf
GA05JT03-46
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 300V 9A
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GA50JT06-258 GA50JT06-258.pdf
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 600V 100A
Produkt ist nicht verfügbar
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GB02SHT01-46 GB02SHT01-46.pdf
GB02SHT01-46
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 100V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+72.20 EUR
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GB02SHT03-46 GB02SHT03-46.pdf
GB02SHT03-46
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 300V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 47 Stücke:
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Anzahl Preis
1+78.36 EUR
10+69.82 EUR
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GB02SHT06-46 GB02SHT06-46.pdf
GB02SHT06-46
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 600V 4A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GAP05SLT80-220 GAP05SLT80-220.pdf
GAP05SLT80-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 8KV 50MA AXIAL
auf Bestellung 9 Stücke:
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GA01PNS150-220 GA01PNS150-220.pdf
GA01PNS150-220
Hersteller: GeneSiC Semiconductor
Description: RF DIODE PIN 15000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 7pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Part Status: Active
Current - Max: 1 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+790.15 EUR
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GA01PNS80-220 GA01PNS80-220.pdf
GA01PNS80-220
Hersteller: GeneSiC Semiconductor
Description: RF DIODE PIN 8000V
Packaging: Tube
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 4pF @ 1000V, 1MHz
Voltage - Peak Reverse (Max): 8000V
Current - Max: 2 A
Produkt ist nicht verfügbar
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GB02SLT12-252 GB02SLT12-252.pdf
GB02SLT12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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MBR2X030A045 mbr2x030a045.pdf
MBR2X030A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.48 EUR
10+63.19 EUR
25+59.51 EUR
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MBR2X030A100 mbr2x030a100.pdf
MBR2X030A100
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR2X050A200 mbr2x050a200.pdf
MBR2X050A200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A SOT227
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
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MBR2X060A045 mbr2x060a045.pdf
MBR2X060A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A045 mbr2x080a045.pdf
MBR2X080A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 80A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+90.92 EUR
10+78.90 EUR
25+74.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A100 mbr2x080a100.pdf
MBR2X080A100
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A180 mbr2x100a180.pdf
MBR2X100A180
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 180V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X120A045 mbr2x120a045.pdf
MBR2X120A045
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+88.33 EUR
10+76.88 EUR
25+72.75 EUR
50+69.77 EUR
100+66.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A02 mur2x030a02.pdf
MUR2X030A02
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A06 mur2x030a06.pdf
MUR2X030A06
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 30A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A10 mur2x030a10.pdf
MUR2X030A10
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X030A12 mur2x030a12.pdf
MUR2X030A12
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X060A02 mur2x060a02.pdf
MUR2X060A02
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+79.39 EUR
10+68.41 EUR
25+64.48 EUR
50+61.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X060A04 mur2x060a04.pdf
MUR2X060A04
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X060A06 mur2x060a06.pdf
MUR2X060A06
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X100A02 mur2x100a02.pdf
MUR2X100A02
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR2X100A04 mur2x100a04.pdf
MUR2X100A04
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+88.14 EUR
10+76.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2504W gbpc25005t.pdf
GBPC2504W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.04 EUR
10+5.60 EUR
25+5.12 EUR
100+4.46 EUR
250+4.07 EUR
500+3.80 EUR
1000+3.55 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2508W gbpc2506t.pdf
GBPC2508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.81 EUR
10+5.42 EUR
25+4.95 EUR
100+4.31 EUR
250+3.94 EUR
500+3.68 EUR
1000+3.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3508W gbpc3506t.pdf
GBPC3508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+5.73 EUR
25+5.25 EUR
100+4.61 EUR
250+4.22 EUR
500+3.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FST100150 fst100150.pdf
FST100150
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST100200 fst100150_thru_fst100200.pdf
FST100200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 50A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST120150 fst120150.pdf
FST120150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST120200 fst120150_thru_fst120200.pdf
FST120200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST160150 fst160150_thru_fst160200.pdf
FST160150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST160200 fst160150.pdf
FST160200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16020L
FST16020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16030L fst16030l.pdf
FST16030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16035L fst16035l.pdf
FST16035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16040L fst16040l.pdf
FST16040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST16045L fst16045l.pdf
FST16045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GA040TH65-227SP GA040TH65.pdf
GA040TH65-227SP
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GA060TH65-227SP GA060TH65.pdf
GA060TH65-227SP
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GA080TH65-227SP GA080TH65.pdf
GA080TH65-227SP
Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC1510T gbpc1506t.pdf
GBPC1510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2510T gbpc2506t.pdf
GBPC2510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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