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GBPC1510T GBPC1510T GeneSiC Semiconductor gbpc1506t.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2510T GBPC2510T GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3510T GBPC3510T GeneSiC Semiconductor gbpc3510t.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC50005W GBPC50005W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBPC5001W GBPC5001W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC5002W GBPC5002W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBPC5008W GBPC5008W GeneSiC Semiconductor gbpc5006t.pdf Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GKN130/18 GKN130/18 GeneSiC Semiconductor gkn13004.pdf Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
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GKN240/18 GKN240/18 GeneSiC Semiconductor gkn24004.pdf Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
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GKR130/18 GKR130/18 GeneSiC Semiconductor gkr13004.pdf Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
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GKR240/18 GKR240/18 GeneSiC Semiconductor gkr24004_thru_gkr24018.pdf Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
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KBP203G KBP203G GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC1501W KBPC1501W GeneSiC Semiconductor kbpc15005t.pdf Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC1504W KBPC1504W GeneSiC Semiconductor kbpc15005t.pdf Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBPC1508W KBPC1508W GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBPC1510T KBPC1510T GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBPC1510W KBPC1510W GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510T KBPC2510T GeneSiC Semiconductor kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3510T KBPC3510T GeneSiC Semiconductor kbpc3506t.pdf Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC50005W KBPC50005W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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KBPC5002W KBPC5002W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC5004W KBPC5004W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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M3P75A-40 M3P75A-40 GeneSiC Semiconductor m3p75a-40_thru_m3p75a-60.pdf Description: DIODE MODULE STD 75A 400V 3PH
Produkt ist nicht verfügbar
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MBR120150CT MBR120150CT GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
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MBR120150CTR MBR120150CTR GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
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MBR120200CT MBR120200CT GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBR120200CTR MBR120200CTR GeneSiC Semiconductor mbr120150ct.pdf Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBR200150CT GeneSiC Semiconductor mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200150CTR GeneSiC Semiconductor mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200200CT GeneSiC Semiconductor mbr200150ct.pdf Description: DIODE SCHOTTKY 200V 100A 2 TOWER
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MBR200200CTR GeneSiC Semiconductor mbr200150ct.pdf Description: DIODE SCHOTTKY 200V 100A 2 TOWER
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MBR2X030A060 MBR2X030A060 GeneSiC Semiconductor mbr2x030a060.pdf Description: DIODE MOD SCHOTT 60V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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MBR2X030A080 MBR2X030A080 GeneSiC Semiconductor mbr2x030a080.pdf Description: DIODE MOD SCHOTT 80V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Produkt ist nicht verfügbar
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MBR2X050A045 MBR2X050A045 GeneSiC Semiconductor mbr2x050a045.pdf Description: DIODE SCHOTTKY 45V 50A SOT227
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MBR2X050A060 MBR2X050A060 GeneSiC Semiconductor mbr2x050a060.pdf Description: DIODE SCHOTTKY 60V 50A SOT227
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MBR2X050A080 MBR2X050A080 GeneSiC Semiconductor mbr2x050a080.pdf Description: DIODE SCHOTTKY 80V 50A SOT227
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MBR2X050A100 MBR2X050A100 GeneSiC Semiconductor mbr2x050a100.pdf Description: DIODE SCHOTTKY 100V 50A SOT227
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MBR2X050A120 MBR2X050A120 GeneSiC Semiconductor mbr2x050a120.pdf Description: DIODE SCHOTTKY 120V 50A SOT227
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MBR2X050A150 MBR2X050A150 GeneSiC Semiconductor mbr2x050a150.pdf Description: DIODE SCHOTTKY 150V 50A SOT227
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MBR2X050A180 MBR2X050A180 GeneSiC Semiconductor mbr2x050a180.pdf Description: DIODE SCHOTTKY 180V 50A SOT227
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MBR2X060A060 MBR2X060A060 GeneSiC Semiconductor mbr2x060a060.pdf Description: DIODE SCHOTTKY 60V 60A SOT227
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MBR2X060A080 MBR2X060A080 GeneSiC Semiconductor mbr2x060a080.pdf Description: DIODE SCHOTTKY 80V 60A SOT227
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MBR2X060A100 MBR2X060A100 GeneSiC Semiconductor mbr2x060a100.pdf Description: DIODE SCHOTTKY 100V 60A SOT227
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MBR2X060A120 MBR2X060A120 GeneSiC Semiconductor mbr2x060a120.pdf Description: DIODE SCHOTTKY 120V 60A SOT227
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MBR2X060A150 MBR2X060A150 GeneSiC Semiconductor mbr2x060a150.pdf Description: DIODE SCHOTTKY 150V 60A SOT227
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MBR2X060A180 MBR2X060A180 GeneSiC Semiconductor mbr2x060a180.pdf Description: DIODE SCHOTTKY 180V 60A SOT227
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MBR2X060A200 MBR2X060A200 GeneSiC Semiconductor mbr2x060a200.pdf Description: DIODE SCHOTTKY 200V 60A SOT227
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MBR2X080A060 MBR2X080A060 GeneSiC Semiconductor mbr2x080a060.pdf Description: DIODE MOD SCHOTT 60V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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MBR2X080A080 MBR2X080A080 GeneSiC Semiconductor mbr2x080a080.pdf Description: DIODE MOD SCHOTT 80V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A120 MBR2X080A120 GeneSiC Semiconductor mbr2x080a120.pdf Description: DIODE MOD SCHOTT 120V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A150 MBR2X080A150 GeneSiC Semiconductor mbr2x080a150.pdf Description: DIODE MOD SCHOTT 150V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A180 MBR2X080A180 GeneSiC Semiconductor mbr2x080a180.pdf Description: DIODE MOD SCHOTT 180V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A200 MBR2X080A200 GeneSiC Semiconductor mbr2x080a200.pdf Description: DIODE MOD SCHOTT 200V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A045 MBR2X100A045 GeneSiC Semiconductor mbr2x100a045.pdf Description: DIODE SCHOTTKY 45V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A060 MBR2X100A060 GeneSiC Semiconductor mbr2x100a060.pdf Description: DIODE SCHOTTKY 60V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A080 MBR2X100A080 GeneSiC Semiconductor mbr2x100a080.pdf Description: DIODE SCHOTTKY 80V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A100 MBR2X100A100 GeneSiC Semiconductor mbr2x100a100.pdf Description: DIODE SCHOTTKY 100V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A120 MBR2X100A120 GeneSiC Semiconductor mbr2x100a120.pdf Description: DIODE SCHOTTKY 120V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A150 MBR2X100A150 GeneSiC Semiconductor mbr2x100a150.pdf Description: DIODE SCHOTTKY 150V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A200 MBR2X100A200 GeneSiC Semiconductor mbr2x100a200.pdf Description: DIODE SCHOTTKY 200V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC1510T gbpc1506t.pdf
GBPC1510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2510T gbpc2506t.pdf
GBPC2510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3510T gbpc3510t.pdf
GBPC3510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC50005W gbpc50005t.pdf
GBPC50005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5001W gbpc50005t.pdf
GBPC5001W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5002W gbpc50005t.pdf
GBPC5002W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5008W gbpc5006t.pdf
GBPC5008W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GKN130/18 gkn13004.pdf
GKN130/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
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GKN240/18 gkn24004.pdf
GKN240/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
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GKR130/18 gkr13004.pdf
GKR130/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
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GKR240/18 gkr24004_thru_gkr24018.pdf
GKR240/18
Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
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KBP203G
KBP203G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1501W kbpc15005t.pdf
KBPC1501W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1504W kbpc15005t.pdf
KBPC1504W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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KBPC1508W kbpc1506t.pdf
KBPC1508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510T kbpc1506t.pdf
KBPC1510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510W kbpc1506t.pdf
KBPC1510W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC2510T kbpc2506t.pdf
KBPC2510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3510T kbpc3506t.pdf
KBPC3510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC50005W kbpc50005t.pdf
KBPC50005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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KBPC5002W kbpc50005t.pdf
KBPC5002W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC5004W kbpc50005t.pdf
KBPC5004W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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M3P75A-40 m3p75a-40_thru_m3p75a-60.pdf
M3P75A-40
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE STD 75A 400V 3PH
Produkt ist nicht verfügbar
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MBR120150CT mbr120150ct.pdf
MBR120150CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120150CTR mbr120150ct.pdf
MBR120150CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120200CT mbr120150ct.pdf
MBR120200CT
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR120200CTR mbr120150ct.pdf
MBR120200CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200150CT mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200150CTR mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200200CT mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR200200CTR mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Produkt ist nicht verfügbar
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MBR2X030A060 mbr2x030a060.pdf
MBR2X030A060
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X030A080 mbr2x030a080.pdf
MBR2X030A080
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A045 mbr2x050a045.pdf
MBR2X050A045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A060 mbr2x050a060.pdf
MBR2X050A060
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A080 mbr2x050a080.pdf
MBR2X050A080
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A100 mbr2x050a100.pdf
MBR2X050A100
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A120 mbr2x050a120.pdf
MBR2X050A120
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A150 mbr2x050a150.pdf
MBR2X050A150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X050A180 mbr2x050a180.pdf
MBR2X050A180
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A060 mbr2x060a060.pdf
MBR2X060A060
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A080 mbr2x060a080.pdf
MBR2X060A080
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A100 mbr2x060a100.pdf
MBR2X060A100
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A120 mbr2x060a120.pdf
MBR2X060A120
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A150 mbr2x060a150.pdf
MBR2X060A150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A180 mbr2x060a180.pdf
MBR2X060A180
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A200 mbr2x060a200.pdf
MBR2X060A200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A060 mbr2x080a060.pdf
MBR2X080A060
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A080 mbr2x080a080.pdf
MBR2X080A080
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A120 mbr2x080a120.pdf
MBR2X080A120
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 120V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A150 mbr2x080a150.pdf
MBR2X080A150
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A180 mbr2x080a180.pdf
MBR2X080A180
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 180V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X080A200 mbr2x080a200.pdf
MBR2X080A200
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A045 mbr2x100a045.pdf
MBR2X100A045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A060 mbr2x100a060.pdf
MBR2X100A060
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A080 mbr2x100a080.pdf
MBR2X100A080
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A100 mbr2x100a100.pdf
MBR2X100A100
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A120 mbr2x100a120.pdf
MBR2X100A120
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A150 mbr2x100a150.pdf
MBR2X100A150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X100A200 mbr2x100a200.pdf
MBR2X100A200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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