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KBPC3510W KBPC3510W kbpc3506t.pdf техническая информация GeneSiC Semiconductor Description: BRIDGE RECT 1P 1KV 35A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBU8J GBU8J gbu8j.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 600V 8A GBU
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6460 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.42 EUR
10+ 3.1 EUR
25+ 2.7 EUR
100+ 2.18 EUR
250+ 1.9 EUR
500+ 1.7 EUR
1000+ 1.53 EUR
2500+ 1.45 EUR
GBU4M gbu4j.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
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DB107G db105g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 1A DB
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Supplier Device Package: DB
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Diode Type: Single Phase
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBPC2506T KBPC2506T kbpc2506t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 600V 25A KBPC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBPC2506W KBPC2506W kbpc2506t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 600V 25A KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Technology: Standard
Supplier Device Package: KBPC-W
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBPC3501W GBPC3501W gbpc35005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W
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KBPC25005T KBPC25005T kbpc25005w.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 50V 25A KBPC
Package / Case: 4-Square, KBPC-T
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBPC25005W KBPC25005W kbpc25005w.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 50V 25A KBPC-W
Voltage - Peak Reverse (Max): 50 V
Technology: Standard
Supplier Device Package: KBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Part Status: Active
Current - Average Rectified (Io): 25 A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BR1010 br1010.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 10A BR-10
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: BR-10
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, BR-10
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 10 A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBPC5010W GBPC5010W gbpc5006t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBPC5010T gbpc5006t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBU8K gbu8j.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 800V 8A GBU
Current - Reverse Leakage @ Vr: 5µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GAP3SLT33-214 GAP3SLT33-214 GAP3SLT33-214.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 3.3KV 300MA DO214
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 3300V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Base Part Number: GAP3SLT33
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 300mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 3300V
Diode Type: Silicon Carbide Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 7719 Stücke
Lieferzeit 21-28 Tag (e)
GB2X50MPS12-227 GB2X50MPS12-227 GB2X50MPS12-227.pdf GeneSiC Semiconductor Description: SIC DIODE 1200V 100A SOT-227
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 93A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 354 Stücke
Lieferzeit 21-28 Tag (e)
1+ 213.04 EUR
10+ 197.96 EUR
25+ 194.2 EUR
GB2X100MPS12-227 GB2X100MPS12-227 GB2X100MPS12-227.pdf GeneSiC Semiconductor Description: SIC DIODE 1200V 200A SOT-227
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 185A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 231 Stücke
Lieferzeit 21-28 Tag (e)
1+ 350.92 EUR
10+ 329.5 EUR
2W02M 2W005M-2W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 200V 2A WOM
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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W02M W02M W005M~W10M.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBPC3510W GBPC3510W gbpc3506t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GBPC3510T GBPC3510T gbpc3506t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GB2X50MPS17-227 GB2X50MPS17-227 GB2X50MPS17-227.pdf GeneSiC Semiconductor Description: DIODE MOD SCHOTTKY 1700V SOT227
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 136A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Current - Reverse Leakage @ Vr: 50 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 57 Stücke
Lieferzeit 21-28 Tag (e)
1+ 271.15 EUR
10+ 250.88 EUR
25+ 250.1 EUR
GBU6G gbu6a.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 400V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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G3R30MT12J G3R30MT12J G3R30MT12J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 96A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 459W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 752 Stücke
Lieferzeit 21-28 Tag (e)
1+ 61.85 EUR
10+ 56.21 EUR
25+ 54.11 EUR
100+ 53.53 EUR
GA01PNS150-201 GA01PNS150-201 GA01PNS150-201.pdf GeneSiC Semiconductor Description: SIC DIODE 15000V 1A DO-201
Current - Max: 1 A
Part Status: Active
Supplier Device Package: DO-201
Voltage - Peak Reverse (Max): 15000V
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-201AD, Axial
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
GBU6K gbu6j.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 800V 6A GBU
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Bulk
Voltage - Peak Reverse (Max): 800 V
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBP208G KBP208G kbp206g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 800V 2A KBP
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBP208 KBP206~KBP210.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 800V 2A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBJ401G kbj4005g.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 100V 4A KBJ
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBPC5001T KBPC5001T kbpc50005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 100V 50A KBPC
Package / Case: 4-Square, KBPC-T
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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KBPC5001W KBPC5001W kbpc50005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 100V 50A KBPC-W
Diode Type: Single Phase
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GB10MPS17-247 GB10MPS17-247 GB10MPS17-247.pdf GeneSiC Semiconductor Description: SIC DIODE 1700V 10A TO-247-2
Supplier Device Package: TO-247-2
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Not For New Designs
Current - Average Rectified (Io): 50A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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GC50MPS06-247 GC50MPS06-247 GC50MPS06-247.pdf GeneSiC Semiconductor Description: SIC DIODE 650V 50A TO-247-2
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A (DC)
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
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GC2X50MPS06-227 GC2X50MPS06-227 GC2X50MPS06-227.pdf GeneSiC Semiconductor Description: DIODE MOD SCHOT 650V 104A SOT227
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 104A (DC)
Diode Configuration: 2 Independent
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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GC2X100MPS06-227 GC2X100MPS06-227 GC2X100MPS06-227.pdf GeneSiC Semiconductor Description: DIODE MOD SCHOT 650V 209A SOT227
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 209A (DC)
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GE06MPS06E GE06MPS06E.pdf GeneSiC Semiconductor Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A (DC)
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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GeneSiC Semiconductor Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A (DC)
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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auf Bestellung 2425 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.75 EUR
10+ 4.99 EUR
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100+ 4.34 EUR
250+ 4.11 EUR
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1000+ 3.78 EUR
GE08MPS06E GE08MPS06E.pdf GeneSiC Semiconductor Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
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GeneSiC Semiconductor Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
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auf Bestellung 2427 Stücke
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10+ 5.56 EUR
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1000+ 4.26 EUR
GE10MPS06E GE10MPS06E.pdf GeneSiC Semiconductor Description: 650V 10A TO-252-2 SIC SCHOTTKY M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
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GeneSiC Semiconductor Description: 650V 10A TO-252-2 SIC SCHOTTKY M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
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auf Bestellung 2487 Stücke
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GE06MPS06A GE06MPS06A.pdf GeneSiC Semiconductor Description: 650V 6A TO-220-2 SIC SCHOTTKY MP
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 12A (DC)
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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auf Bestellung 3410 Stücke
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100+ 4.95 EUR
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500+ 4.5 EUR
1000+ 4.32 EUR
2500+ 4.24 EUR
GE08MPS06A GE08MPS06A.pdf GeneSiC Semiconductor Description: 650V 8A TO-220-2 SIC SCHOTTKY MP
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A (DC)
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Package / Case: TO-220-2
Packaging: Tube
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auf Bestellung 970 Stücke
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10+ 6.41 EUR
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500+ 5.12 EUR
GE10MPS06A GE10MPS06A GE10MPS06A.pdf GeneSiC Semiconductor Description: 650V 10A TO-220-2 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 19A (DC)
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-2
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auf Bestellung 870 Stücke
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500+ 6.09 EUR
GE2X8MPS06D GE2X8MPS06D GE2X8MPS06D.pdf GeneSiC Semiconductor Description: 650V 16A TO-247-3 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 19A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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auf Bestellung 319 Stücke
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100+ 11.17 EUR
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GE2X10MPS06D GE2X10MPS06D GE2X10MPS06D.pdf GeneSiC Semiconductor Description: 650V 20A TO-247-3 SIC SCHOTTKY M
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 23A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
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GD30MPS06H GD30MPS06H.pdf GeneSiC Semiconductor Description: 650V 30A TO-247-2 SIC SCHOTTKY M
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Average Rectified (Io): 49A (DC)
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
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auf Bestellung 1110 Stücke
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2+ 15.63 EUR
10+ 13.95 EUR
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100+ 12.46 EUR
250+ 11.92 EUR
500+ 11.52 EUR
1000+ 11.44 EUR
GD30MPS06J GD30MPS06J GD30MPS06J.pdf GeneSiC Semiconductor Description: 650V 30A TO-263-7 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 51A (DC)
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
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auf Bestellung 943 Stücke
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250+ 13.86 EUR
500+ 13.41 EUR
GD2X30MPS06N GD2X30MPS06N.pdf GeneSiC Semiconductor Description: 650V 60A SOT-227 SIC SCHOTTKY MP
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Diode Configuration: 2 Independent
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 42A (DC)
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
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auf Bestellung 294 Stücke
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1+ 73.29 EUR
10+ 66.84 EUR
25+ 64.43 EUR
100+ 61.78 EUR
GB05MPS17-247 GB05MPS17-247 GB05MPS17-247.pdf GeneSiC Semiconductor Description: SIC DIODE 1700V 5A TO-247-2
Current - Average Rectified (Io): 25A (DC)
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
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G3R350MT12D G3R350MT12D G3R350MT12D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 11A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
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auf Bestellung 3623 Stücke
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G3R160MT12D G3R160MT12D G3R160MT12D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 22A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Power Dissipation (Max): 123W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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G3R75MT12D G3R75MT12D G3R75MT12D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 41A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Power Dissipation (Max): 207W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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auf Bestellung 6614 Stücke
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G3R40MT12D G3R40MT12D G3R40MT12D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 71A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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auf Bestellung 971 Stücke
Lieferzeit 21-28 Tag (e)
G2R1000MT33J G2R1000MT33J G2R1000MT33J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 4A TO263-7
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Drain to Source Voltage (Vdss): 3300 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Power Dissipation (Max): 74W (Tc)
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G2R120MT33J G2R120MT33J sic-mosfet-selector-guide.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
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Lieferzeit 21-28 Tag (e)
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G3R350MT12J G3R350MT12J G3R350MT12J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 11A TO263-7
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
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KBPC1502T KBPC1502T kbpc15005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 200V 15A KBPC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
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KBPC1502W KBPC1502W kbpc15005t.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1P 200V 15A KBPC-W
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Packaging: Bulk
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G3R75MT12K G3R75MT12K G3R75MT12K.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 41A TO247-4
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Package / Case: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Power Dissipation (Max): 207W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
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G2R1000MT17J G2R1000MT17J G2R1000MT17J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 3A TO263-7
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
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G3R20MT17K G3R20MT17K GeneSiC Semiconductor Description: SIC MOSFET N-CH 124A TO247-4
Power Dissipation (Max): 809W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.7V @ 15mA
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G3R20MT12K G3R20MT12K G3R20MT12K.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 128A TO247-4
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
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GC05MPS12-252 GC05MPS12-252 GC05MPS12-252.pdf GeneSiC Semiconductor Description: SIC DIODE 1200V 5A TO-252-2
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 27A (DC)
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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GC08MPS12-252 GC08MPS12-252 GC08MPS12-252.pdf GeneSiC Semiconductor Description: SIC DIODE 1200V 8A TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 40A (DC)
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
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GeneSiC Semiconductor Description: SIC DIODE 1200V 8A TO-252-2
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 40A (DC)
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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G3R40MT12K G3R40MT12K G3R40MT12K.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 71A TO247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
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G3R30MT12K G3R30MT12K G3R30MT12K.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 90A TO247-4
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
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GB50MPS17-247 GB50MPS17-247 GB50MPS17-247.pdf GeneSiC Semiconductor Description: SIC DIODE 1700V 50A TO-247-2
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 216A (DC)
Capacitance @ Vr, F: 3193pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 1700 V
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GB25MPS17-247 GB25MPS17-247 GB25MPS17-247.pdf GeneSiC Semiconductor Description: SIC DIODE 1700V 25A TO-247-2
Current - Reverse Leakage @ Vr: 30 µA @ 1700 V
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Average Rectified (Io): 110A (DC)
Capacitance @ Vr, F: 1596pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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GB05MPS17-263 GB05MPS17-263 GB05MPS17-263.pdf GeneSiC Semiconductor Description: 1700V 5A TO-263-7 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 18A (DC)
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
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GD2X75MPS17N GD2X75MPS17N.pdf GeneSiC Semiconductor Description: 1700V 150A SOT-227 SIC SCHOTTKY
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
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GBU8A gbu8a.pdf GeneSiC Semiconductor Description: BRIDGE RECT 1PHASE 50V 8A GBU
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 50V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
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GD05MPS17H GD05MPS17H GD05MPS17H.pdf GeneSiC Semiconductor Description: 1700V 5A TO-247-2 SIC SCHOTTKY M
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 15A (DC)
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
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GD10MPS17H GD10MPS17H GD10MPS17H.pdf GeneSiC Semiconductor Description: 1700V 10A TO-247-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 28A (DC)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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GD15MPS17H GD15MPS17H GD15MPS17H.pdf GeneSiC Semiconductor Description: 1700V 15A TO-247-2 SIC SCHOTTKY
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 36A (DC)
Capacitance @ Vr, F: 1.082nF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
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GD25MPS17H GD25MPS17H GD25MPS17H.pdf GeneSiC Semiconductor Description: 1700V 25A TO-247-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 56A (DC)
Capacitance @ Vr, F: 1.083nF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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G2R1000MT17D G2R1000MT17D G2R1000MT17D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 4A TO247-3
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
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GD02MPS12E GD02MPS12E GD02MPS12E.pdf GeneSiC Semiconductor Description: 1200V 2A TO-252-2 SIC SCHOTTKY M
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A (DC)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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GeneSiC Semiconductor Description: 1200V 2A TO-252-2 SIC SCHOTTKY M
Part Status: Active
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 8A (DC)
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
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GD10MPS12A GD10MPS12A GD10MPS12A.pdf GeneSiC Semiconductor Description: 1200V 10A TO-220-2 SIC SCHOTTKY
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A (DC)
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Package / Case: TO-220-2
Mounting Type: Through Hole
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
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G3R160MT12J G3R160MT12J G3R160MT12J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 22A TO263-7
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
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G3R450MT17J G3R450MT17J G3R450MT17J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 9A TO263-7
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 15V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 1700V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: GeneSiC Semiconductor
Base Part Number: G3R450
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 91W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 1000V
Vgs (Max): ±15V
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G3R450MT17D G3R450MT17D G3R450MT17D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 9A TO247-3
Manufacturer: GeneSiC Semiconductor
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 15V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 1000V
Power Dissipation (Max): 88W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Part Number: G3R450
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G3R40MT12J G3R40MT12J G3R40MT12J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 75A TO263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Power Dissipation (Max): 374W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
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G3R45MT17K G3R45MT17K G3R45MT17K.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 61A TO247-4
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Power Dissipation (Max): 438W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
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G3R45MT17D G3R45MT17D G3R45MT17D.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 61A TO247-3
Manufacturer: GeneSiC Semiconductor
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 15V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 4523pF @ 1000V
Power Dissipation (Max): 438W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Part Number: G3R45
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MBR8045 MBR8045 mbr80100.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 80A DO5
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 45 V
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
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G3R60MT07D G3R60MT07D.pdf GeneSiC Semiconductor Description: 750V 60M TO-247-3 G3R SIC MOSFET
Drain to Source Voltage (Vdss): 750 V
Part Status: Active
Supplier Device Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
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G3R75MT12J G3R75MT12J G3R75MT12J.pdf GeneSiC Semiconductor Description: SIC MOSFET N-CH 42A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Power Dissipation (Max): 224W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
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G2R50MT33K G2R50MT33K G2R50MT33K.pdf GeneSiC Semiconductor Description: 3300V 50M TO-247-4 SIC MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
Drain to Source Voltage (Vdss): 3300 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
Power Dissipation (Max): 536W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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GD50MPS12H GD50MPS12H GD50MPS12H.pdf GeneSiC Semiconductor Description: 1200V 50A TO-247-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 92A (DC)
Capacitance @ Vr, F: 1.835nF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Package / Case: TO-247-2
Packaging: Tube
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GD2X100MPS06N GD2X100MPS06N GD2X100MPS06N.pdf GeneSiC Semiconductor Description: 650V 200A SOT-227 SIC SCHOTTKY M
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
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GE04MPS06A GE04MPS06A GE04MPS06A.pdf GeneSiC Semiconductor Description: 650V 4A TO-220-2 SIC SCHOTTKY MP
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 9A (DC)
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
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2500+ 3.41 EUR
GD10MPS12E GD10MPS12E GD10MPS12E.pdf GeneSiC Semiconductor Description: 1200V 10A TO-252-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A (DC)
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
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GeneSiC Semiconductor Description: 1200V 10A TO-252-2 SIC SCHOTTKY
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A (DC)
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
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GD30MPS12J GeneSiC Semiconductor Description: 1200V 30A TO-263-7 SIC SCHOTTKY
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 30A (DC)
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
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GC50MPS33H GeneSiC Semiconductor Description: 3300V 50A TO-247-2 SIC SCHOTTKY
Current - Average Rectified (Io): 50A (DC)
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 3300 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2
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GE04MPS06E GE04MPS06E GE04MPS06E.pdf GeneSiC Semiconductor Description: 650V 4A TO-252-2 SIC SCHOTTKY MP
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Diode Type: Silicon Carbide Schottky
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 11A (DC)
Supplier Device Package: TO-252-2
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GeneSiC Semiconductor Description: 650V 4A TO-252-2 SIC SCHOTTKY MP
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 11A (DC)
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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10+ 3.87 EUR
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100+ 3.36 EUR
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1000+ 2.92 EUR
KBPC3510W техническая информация kbpc3506t.pdf
KBPC3510W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
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GBU8J gbu8j.pdf
GBU8J
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Bulk
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2500+ 1.45 EUR
GBU4M gbu4j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
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DB107G db105g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Bulk
Supplier Device Package: DB
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPC2506T kbpc2506t.pdf
KBPC2506T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 25A KBPC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPC2506W kbpc2506t.pdf
KBPC2506W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 25A KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Technology: Standard
Supplier Device Package: KBPC-W
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GBPC3501W gbpc35005t.pdf
GBPC3501W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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KBPC25005T kbpc25005w.pdf
KBPC25005T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 25A KBPC
Package / Case: 4-Square, KBPC-T
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 50 V
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPC25005W kbpc25005w.pdf
KBPC25005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 25A KBPC-W
Voltage - Peak Reverse (Max): 50 V
Technology: Standard
Supplier Device Package: KBPC-W
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Part Status: Active
Current - Average Rectified (Io): 25 A
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BR1010 br1010.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 10A BR-10
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: BR-10
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, BR-10
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 10 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GBPC5010W gbpc5006t.pdf
GBPC5010W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GBPC5010T gbpc5006t.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Technology: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GBU8K gbu8j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Current - Reverse Leakage @ Vr: 5µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 75656 Stücke - Preis und Lieferfrist anzeigen
GAP3SLT33-214 GAP3SLT33-214.pdf
GAP3SLT33-214
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 3.3KV 300MA DO214
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 3300V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Base Part Number: GAP3SLT33
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 300mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 3300V
Diode Type: Silicon Carbide Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
auf Bestellung 7719 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
GB2X50MPS12-227 GB2X50MPS12-227.pdf
GB2X50MPS12-227
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 100A SOT-227
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 93A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 354 Stücke
Lieferzeit 21-28 Tag (e)
1+ 213.04 EUR
10+ 197.96 EUR
25+ 194.2 EUR
GB2X100MPS12-227 GB2X100MPS12-227.pdf
GB2X100MPS12-227
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 200A SOT-227
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 185A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
auf Bestellung 231 Stücke
Lieferzeit 21-28 Tag (e)
1+ 350.92 EUR
10+ 329.5 EUR
2W02M 2W005M-2W10M.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 2A WOM
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
W02M W005M~W10M.pdf
W02M
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 1.5A WOM
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: WOM
Technology: Standard
Operating Temperature: -65°C ~ 125°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4510 Stücke - Preis und Lieferfrist anzeigen
GBPC3510W gbpc3506t.pdf
GBPC3510W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3304 Stücke - Preis und Lieferfrist anzeigen
GBPC3510T gbpc3506t.pdf
GBPC3510T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB2X50MPS17-227 GB2X50MPS17-227.pdf
GB2X50MPS17-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTTKY 1700V SOT227
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 136A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Current - Reverse Leakage @ Vr: 50 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Packaging: Tube
auf Bestellung 57 Stücke
Lieferzeit 21-28 Tag (e)
1+ 271.15 EUR
10+ 250.88 EUR
25+ 250.1 EUR
GBU6G gbu6a.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12126 Stücke - Preis und Lieferfrist anzeigen
G3R30MT12J G3R30MT12J.pdf
G3R30MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 96A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 459W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 752 Stücke
Lieferzeit 21-28 Tag (e)
1+ 61.85 EUR
10+ 56.21 EUR
25+ 54.11 EUR
100+ 53.53 EUR
GA01PNS150-201 GA01PNS150-201.pdf
GA01PNS150-201
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 15000V 1A DO-201
Current - Max: 1 A
Part Status: Active
Supplier Device Package: DO-201
Voltage - Peak Reverse (Max): 15000V
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: PIN - Single
Package / Case: DO-201AD, Axial
Packaging: Bulk
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
GBU6K gbu6j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Bulk
Voltage - Peak Reverse (Max): 800 V
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 6 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2094 Stücke - Preis und Lieferfrist anzeigen
KBP208G kbp206g.pdf
KBP208G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 77128 Stücke - Preis und Lieferfrist anzeigen
KBP208 KBP206~KBP210.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2650 Stücke - Preis und Lieferfrist anzeigen
KBJ401G kbj4005g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 4A KBJ
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBJ
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 500 Stücke - Preis und Lieferfrist anzeigen
KBPC5001T kbpc50005t.pdf
KBPC5001T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 50A KBPC
Package / Case: 4-Square, KBPC-T
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPC5001W kbpc50005t.pdf
KBPC5001W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A KBPC-W
Diode Type: Single Phase
Package / Case: 4-Square, KBPC-W
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 50 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB10MPS17-247 GB10MPS17-247.pdf
GB10MPS17-247
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1700V 10A TO-247-2
Supplier Device Package: TO-247-2
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Not For New Designs
Current - Average Rectified (Io): 50A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GC50MPS06-247 GC50MPS06-247.pdf
GC50MPS06-247
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 650V 50A TO-247-2
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A (DC)
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GC2X50MPS06-227 GC2X50MPS06-227.pdf
GC2X50MPS06-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 104A SOT227
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 104A (DC)
Diode Configuration: 2 Independent
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GC2X100MPS06-227 GC2X100MPS06-227.pdf
GC2X100MPS06-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 209A SOT227
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 209A (DC)
auf Bestellung 42 Stücke
Lieferzeit 21-28 Tag (e)
GE06MPS06E GE06MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A (DC)
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2425 Stücke - Preis und Lieferfrist anzeigen
GE06MPS06E GE06MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A (DC)
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2425 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.75 EUR
10+ 4.99 EUR
25+ 4.72 EUR
100+ 4.34 EUR
250+ 4.11 EUR
500+ 3.94 EUR
1000+ 3.78 EUR
GE08MPS06E GE08MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2427 Stücke - Preis und Lieferfrist anzeigen
GE08MPS06E GE08MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 8A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 2427 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.34 EUR
10+ 5.56 EUR
25+ 5.27 EUR
100+ 4.86 EUR
250+ 4.61 EUR
500+ 4.43 EUR
1000+ 4.26 EUR
GE10MPS06E GE10MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 10A TO-252-2 SIC SCHOTTKY M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2487 Stücke - Preis und Lieferfrist anzeigen
GE10MPS06E GE10MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 10A TO-252-2 SIC SCHOTTKY M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A (DC)
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 2487 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.62 EUR
10+ 6.71 EUR
25+ 6.37 EUR
100+ 5.9 EUR
250+ 5.61 EUR
500+ 5.39 EUR
1000+ 5.19 EUR
GE06MPS06A GE06MPS06A.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 6A TO-220-2 SIC SCHOTTKY MP
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 12A (DC)
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 3410 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 88 Stücke - Preis und Lieferfrist anzeigen
4+ 6.53 EUR
10+ 5.69 EUR
25+ 5.38 EUR
100+ 4.95 EUR
250+ 4.69 EUR
500+ 4.5 EUR
1000+ 4.32 EUR
2500+ 4.24 EUR
GE08MPS06A GE08MPS06A.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 8A TO-220-2 SIC SCHOTTKY MP
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A (DC)
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 970 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
4+ 7.31 EUR
10+ 6.41 EUR
25+ 6.08 EUR
100+ 5.61 EUR
250+ 5.33 EUR
500+ 5.12 EUR
GE10MPS06A GE10MPS06A.pdf
GE10MPS06A
Hersteller: GeneSiC Semiconductor
Description: 650V 10A TO-220-2 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 19A (DC)
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-2
auf Bestellung 870 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
4+ 8.58 EUR
10+ 7.56 EUR
25+ 7.19 EUR
100+ 6.66 EUR
250+ 6.33 EUR
500+ 6.09 EUR
GE2X8MPS06D GE2X8MPS06D.pdf
GE2X8MPS06D
Hersteller: GeneSiC Semiconductor
Description: 650V 16A TO-247-3 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 19A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 319 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
2+ 14.12 EUR
10+ 12.56 EUR
25+ 11.98 EUR
100+ 11.17 EUR
250+ 10.66 EUR
GE2X10MPS06D GE2X10MPS06D.pdf
GE2X10MPS06D
Hersteller: GeneSiC Semiconductor
Description: 650V 20A TO-247-3 SIC SCHOTTKY M
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 23A (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 32 Stücke - Preis und Lieferfrist anzeigen
GD30MPS06H GD30MPS06H.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 30A TO-247-2 SIC SCHOTTKY M
Speed: No Recovery Time > 500mA (Io)
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Average Rectified (Io): 49A (DC)
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 1110 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 488 Stücke - Preis und Lieferfrist anzeigen
2+ 15.63 EUR
10+ 13.95 EUR
25+ 13.34 EUR
100+ 12.46 EUR
250+ 11.92 EUR
500+ 11.52 EUR
1000+ 11.44 EUR
GD30MPS06J GD30MPS06J.pdf
GD30MPS06J
Hersteller: GeneSiC Semiconductor
Description: 650V 30A TO-263-7 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 51A (DC)
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 943 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 180 Stücke - Preis und Lieferfrist anzeigen
2+ 18.04 EUR
10+ 16.16 EUR
25+ 15.47 EUR
100+ 14.48 EUR
250+ 13.86 EUR
500+ 13.41 EUR
GD2X30MPS06N GD2X30MPS06N.pdf
Hersteller: GeneSiC Semiconductor
Description: 650V 60A SOT-227 SIC SCHOTTKY MP
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Diode Configuration: 2 Independent
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 42A (DC)
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 294 Stücke
Lieferzeit 21-28 Tag (e)
1+ 73.29 EUR
10+ 66.84 EUR
25+ 64.43 EUR
100+ 61.78 EUR
GB05MPS17-247 GB05MPS17-247.pdf
GB05MPS17-247
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1700V 5A TO-247-2
Current - Average Rectified (Io): 25A (DC)
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
G3R350MT12D G3R350MT12D.pdf
G3R350MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
auf Bestellung 3623 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 758 Stücke - Preis und Lieferfrist anzeigen
G3R160MT12D G3R160MT12D.pdf
G3R160MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 22A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Power Dissipation (Max): 123W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
G3R75MT12D G3R75MT12D.pdf
G3R75MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Power Dissipation (Max): 207W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6614 Stücke
Lieferzeit 21-28 Tag (e)
G3R40MT12D G3R40MT12D.pdf
G3R40MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 71A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 971 Stücke
Lieferzeit 21-28 Tag (e)
G2R1000MT33J G2R1000MT33J.pdf
G2R1000MT33J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO263-7
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Drain to Source Voltage (Vdss): 3300 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Power Dissipation (Max): 74W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
G2R120MT33J sic-mosfet-selector-guide.pdf
G2R120MT33J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
auf Bestellung 265 Stücke
Lieferzeit 21-28 Tag (e)
1+ 291.93 EUR
10+ 281.24 EUR
G3R350MT12J G3R350MT12J.pdf
G3R350MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
auf Bestellung 6895 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1998 Stücke - Preis und Lieferfrist anzeigen
2+ 14.92 EUR
10+ 13.32 EUR
25+ 12.72 EUR
100+ 11.88 EUR
250+ 11.35 EUR
500+ 11.27 EUR
KBPC1502T kbpc15005t.pdf
KBPC1502T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 15A KBPC
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, KBPC-T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
KBPC1502W kbpc15005t.pdf
KBPC1502W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 15A KBPC-W
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: KBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
G3R75MT12K G3R75MT12K.pdf
G3R75MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-4
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Package / Case: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Power Dissipation (Max): 207W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
auf Bestellung 954 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1200 Stücke - Preis und Lieferfrist anzeigen
1+ 29.85 EUR
10+ 26.89 EUR
25+ 25.8 EUR
100+ 24.23 EUR
250+ 24.16 EUR
G2R1000MT17J G2R1000MT17J.pdf
G2R1000MT17J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 3A TO263-7
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +20V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
auf Bestellung 18261 Stücke
Lieferzeit 21-28 Tag (e)
2+ 17.42 EUR
10+ 15.62 EUR
25+ 14.95 EUR
100+ 14 EUR
250+ 13.4 EUR
500+ 13.39 EUR
G3R20MT17K
G3R20MT17K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4
Power Dissipation (Max): 809W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.7V @ 15mA
auf Bestellung 39 Stücke
Lieferzeit 21-28 Tag (e)
1+ 275.6 EUR
10+ 265.4 EUR
G3R20MT12K G3R20MT12K.pdf
G3R20MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 128A TO247-4
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
auf Bestellung 528 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 802 Stücke - Preis und Lieferfrist anzeigen
1+ 99.94 EUR
10+ 91.91 EUR
25+ 89.63 EUR
GC05MPS12-252 GC05MPS12-252.pdf
GC05MPS12-252
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 5A TO-252-2
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 27A (DC)
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GC08MPS12-252 GC08MPS12-252.pdf
GC08MPS12-252
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 8A TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 40A (DC)
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2363 Stücke - Preis und Lieferfrist anzeigen
GC08MPS12-252 GC08MPS12-252.pdf
GC08MPS12-252
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1200V 8A TO-252-2
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 40A (DC)
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2363 Stücke
Lieferzeit 21-28 Tag (e)
G3R40MT12K G3R40MT12K.pdf
G3R40MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 71A TO247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
auf Bestellung 1131 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1180 Stücke - Preis und Lieferfrist anzeigen
1+ 48.93 EUR
10+ 44.71 EUR
25+ 43.13 EUR
100+ 41.48 EUR
G3R30MT12K G3R30MT12K.pdf
G3R30MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
auf Bestellung 2889 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 54 Stücke - Preis und Lieferfrist anzeigen
1+ 62.4 EUR
10+ 57.34 EUR
25+ 55.44 EUR
100+ 53.96 EUR
GB50MPS17-247 GB50MPS17-247.pdf
GB50MPS17-247
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1700V 50A TO-247-2
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 216A (DC)
Capacitance @ Vr, F: 3193pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 1700 V
auf Bestellung 380 Stücke
Lieferzeit 21-28 Tag (e)
GB25MPS17-247 GB25MPS17-247.pdf
GB25MPS17-247
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1700V 25A TO-247-2
Current - Reverse Leakage @ Vr: 30 µA @ 1700 V
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Average Rectified (Io): 110A (DC)
Capacitance @ Vr, F: 1596pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GB05MPS17-263 GB05MPS17-263.pdf
GB05MPS17-263
Hersteller: GeneSiC Semiconductor
Description: 1700V 5A TO-263-7 SIC SCHOTTKY M
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 18A (DC)
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 2423 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8 Stücke - Preis und Lieferfrist anzeigen
2+ 21.94 EUR
10+ 19.59 EUR
25+ 18.73 EUR
100+ 17.49 EUR
250+ 16.72 EUR
500+ 16.58 EUR
GD2X75MPS17N GD2X75MPS17N.pdf
Hersteller: GeneSiC Semiconductor
Description: 1700V 150A SOT-227 SIC SCHOTTKY
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
auf Bestellung 219 Stücke
Lieferzeit 21-28 Tag (e)
1+ 291.62 EUR
10+ 270.93 EUR
GBU8A gbu8a.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A GBU
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Average Rectified (Io): 8A
Voltage - Peak Reverse (Max): 50V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: GBU
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10344 Stücke - Preis und Lieferfrist anzeigen
GD05MPS17H GD05MPS17H.pdf
GD05MPS17H
Hersteller: GeneSiC Semiconductor
Description: 1700V 5A TO-247-2 SIC SCHOTTKY M
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 15A (DC)
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
auf Bestellung 3261 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.3 EUR
10+ 12.73 EUR
25+ 12.16 EUR
100+ 11.34 EUR
250+ 10.83 EUR
500+ 10.74 EUR
GD10MPS17H GD10MPS17H.pdf
GD10MPS17H
Hersteller: GeneSiC Semiconductor
Description: 1700V 10A TO-247-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 28A (DC)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 1437 Stücke
Lieferzeit 21-28 Tag (e)
2+ 22.05 EUR
10+ 19.72 EUR
25+ 18.86 EUR
100+ 17.63 EUR
250+ 17.38 EUR
GD15MPS17H GD15MPS17H.pdf
GD15MPS17H
Hersteller: GeneSiC Semiconductor
Description: 1700V 15A TO-247-2 SIC SCHOTTKY
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 36A (DC)
Capacitance @ Vr, F: 1.082nF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 1583 Stücke
Lieferzeit 21-28 Tag (e)
1+ 30.08 EUR
10+ 27.12 EUR
25+ 26.03 EUR
100+ 24.47 EUR
250+ 24.43 EUR
GD25MPS17H GD25MPS17H.pdf
GD25MPS17H
Hersteller: GeneSiC Semiconductor
Description: 1700V 25A TO-247-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 56A (DC)
Capacitance @ Vr, F: 1.083nF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 663 Stücke
Lieferzeit 21-28 Tag (e)
1+ 48.67 EUR
10+ 43.93 EUR
25+ 42.18 EUR
100+ 41.29 EUR
G2R1000MT17D G2R1000MT17D.pdf
G2R1000MT17D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO247-3
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
auf Bestellung 6867 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1050 Stücke - Preis und Lieferfrist anzeigen
GD02MPS12E GD02MPS12E.pdf
GD02MPS12E
Hersteller: GeneSiC Semiconductor
Description: 1200V 2A TO-252-2 SIC SCHOTTKY M
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A (DC)
Reverse Recovery Time (trr): 0 ns
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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GD02MPS12E GD02MPS12E.pdf
GD02MPS12E
Hersteller: GeneSiC Semiconductor
Description: 1200V 2A TO-252-2 SIC SCHOTTKY M
Part Status: Active
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 8A (DC)
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
auf Bestellung 151 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.93 EUR
10+ 3.39 EUR
25+ 3.2 EUR
100+ 2.93 EUR
GD10MPS12A GD10MPS12A.pdf
GD10MPS12A
Hersteller: GeneSiC Semiconductor
Description: 1200V 10A TO-220-2 SIC SCHOTTKY
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A (DC)
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Package / Case: TO-220-2
Mounting Type: Through Hole
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
auf Bestellung 3733 Stücke
Lieferzeit 21-28 Tag (e)
3+ 10.5 EUR
10+ 9.27 EUR
25+ 8.82 EUR
100+ 8.17 EUR
250+ 7.77 EUR
500+ 7.61 EUR
G3R160MT12J G3R160MT12J.pdf
G3R160MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 22A TO263-7
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
G3R450MT17J G3R450MT17J.pdf
G3R450MT17J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO263-7
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 15V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 1700V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: GeneSiC Semiconductor
Base Part Number: G3R450
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 91W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 1000V
Vgs (Max): ±15V
auf Bestellung 1640 Stücke
Lieferzeit 21-28 Tag (e)
G3R450MT17D G3R450MT17D.pdf
G3R450MT17D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO247-3
Manufacturer: GeneSiC Semiconductor
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 15V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 1000V
Power Dissipation (Max): 88W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Part Number: G3R450
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 116 Stücke - Preis und Lieferfrist anzeigen
G3R40MT12J G3R40MT12J.pdf
G3R40MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 75A TO263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Power Dissipation (Max): 374W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 892 Stücke
Lieferzeit 21-28 Tag (e)
G3R45MT17K G3R45MT17K.pdf
G3R45MT17K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 61A TO247-4
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Power Dissipation (Max): 438W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
auf Bestellung 428 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28 Stücke - Preis und Lieferfrist anzeigen
G3R45MT17D G3R45MT17D.pdf
G3R45MT17D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 61A TO247-3
Manufacturer: GeneSiC Semiconductor
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 15V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 4523pF @ 1000V
Power Dissipation (Max): 438W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Part Number: G3R45
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 54 Stücke - Preis und Lieferfrist anzeigen
MBR8045 mbr80100.pdf
MBR8045
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A DO5
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Voltage - DC Reverse (Vr) (Max): 45 V
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
G3R60MT07D G3R60MT07D.pdf
Hersteller: GeneSiC Semiconductor
Description: 750V 60M TO-247-3 G3R SIC MOSFET
Drain to Source Voltage (Vdss): 750 V
Part Status: Active
Supplier Device Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
auf Bestellung 419 Stücke
Lieferzeit 21-28 Tag (e)
G3R75MT12J G3R75MT12J.pdf
G3R75MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 42A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Power Dissipation (Max): 224W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 2992 Stücke
Lieferzeit 21-28 Tag (e)
1+ 29.87 EUR
10+ 26.94 EUR
25+ 25.85 EUR
100+ 24.3 EUR
250+ 24.25 EUR
G2R50MT33K G2R50MT33K.pdf
G2R50MT33K
Hersteller: GeneSiC Semiconductor
Description: 3300V 50M TO-247-4 SIC MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
Drain to Source Voltage (Vdss): 3300 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
Power Dissipation (Max): 536W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
GD50MPS12H GD50MPS12H.pdf
GD50MPS12H
Hersteller: GeneSiC Semiconductor
Description: 1200V 50A TO-247-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 92A (DC)
Capacitance @ Vr, F: 1.835nF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Diode Type: Silicon Carbide Schottky
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 240 Stücke
Lieferzeit 21-28 Tag (e)
1+ 42.59 EUR
10+ 38.79 EUR
25+ 37.37 EUR
100+ 35.74 EUR
GD2X100MPS06N GD2X100MPS06N.pdf
GD2X100MPS06N
Hersteller: GeneSiC Semiconductor
Description: 650V 200A SOT-227 SIC SCHOTTKY M
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
auf Bestellung 396 Stücke
Lieferzeit 21-28 Tag (e)
1+ 129.43 EUR
10+ 118.8 EUR
25+ 118.42 EUR
GE04MPS06A GE04MPS06A.pdf
GE04MPS06A
Hersteller: GeneSiC Semiconductor
Description: 650V 4A TO-220-2 SIC SCHOTTKY MP
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 9A (DC)
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 7391 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.23 EUR
10+ 4.54 EUR
25+ 4.3 EUR
100+ 3.95 EUR
250+ 3.74 EUR
500+ 3.59 EUR
1000+ 3.44 EUR
2500+ 3.41 EUR
GD10MPS12E GD10MPS12E.pdf
GD10MPS12E
Hersteller: GeneSiC Semiconductor
Description: 1200V 10A TO-252-2 SIC SCHOTTKY
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A (DC)
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 116 Stücke - Preis und Lieferfrist anzeigen
GD10MPS12E GD10MPS12E.pdf
GD10MPS12E
Hersteller: GeneSiC Semiconductor
Description: 1200V 10A TO-252-2 SIC SCHOTTKY
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A (DC)
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
auf Bestellung 116 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9.52 EUR
10+ 8.36 EUR
25+ 7.94 EUR
100+ 7.35 EUR
GD30MPS12J
Hersteller: GeneSiC Semiconductor
Description: 1200V 30A TO-263-7 SIC SCHOTTKY
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 30A (DC)
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 34 Stücke
Lieferzeit 21-28 Tag (e)
1+ 28 EUR
10+ 25.21 EUR
25+ 24.18 EUR
GC50MPS33H
Hersteller: GeneSiC Semiconductor
Description: 3300V 50A TO-247-2 SIC SCHOTTKY
Current - Average Rectified (Io): 50A (DC)
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 3300 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2
auf Bestellung 55 Stücke
Lieferzeit 21-28 Tag (e)
1+ 666.3 EUR
GE04MPS06E GE04MPS06E.pdf
GE04MPS06E
Hersteller: GeneSiC Semiconductor
Description: 650V 4A TO-252-2 SIC SCHOTTKY MP
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Diode Type: Silicon Carbide Schottky
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io): 11A (DC)
Supplier Device Package: TO-252-2
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6756 Stücke - Preis und Lieferfrist anzeigen
2500+ 2.84 EUR
GE04MPS06E GE04MPS06E.pdf
GE04MPS06E
Hersteller: GeneSiC Semiconductor
Description: 650V 4A TO-252-2 SIC SCHOTTKY MP
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Diode Type: Silicon Carbide Schottky
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 11A (DC)
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
auf Bestellung 6756 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
6+ 4.47 EUR
10+ 3.87 EUR
25+ 3.66 EUR
100+ 3.36 EUR
250+ 3.17 EUR
500+ 3.04 EUR
1000+ 2.92 EUR
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