GB2X50MPS17-227 GeneSiC Semiconductor

Description: DIODE MOD SIC 1700V 136A SOT-227, Current - Reverse Leakage @ Vr: 50 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 136A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.