GB20SLT12-247 GeneSiC Semiconductor
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Technische Details GB20SLT12-247 GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 20A TO247-2, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 968pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote GB20SLT12-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GB20SLT12-247 | Hersteller : GeneSiC SEMICONDUCTOR |
 GB20SLT12-247 THT Schottky diodes |
Produkt ist nicht verfügbar |
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GB20SLT12-247 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 20A TO247-2 Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 968pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
Produkt ist nicht verfügbar |