Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5578) > Seite 20 nach 93
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GBPC2508W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 25A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 1955 Stücke: Lieferzeit 10-14 Tag (e) |
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GBPC3508W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 401 Stücke: Lieferzeit 10-14 Tag (e) |
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FST100150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 150V 50A TO249ABPackaging: Bulk Package / Case: TO-249AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: TO-249AB Operating Temperature - Junction: -55°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST100200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 50A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST120150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 60A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST120200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 60A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST160150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST160200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST16020L | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST16030L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST16035L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST16040L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST16045L | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 80A TO249AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GA040TH65-227SP | GeneSiC Semiconductor |
Description: MOD THYRISTOR CUSTOM SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GA060TH65-227SP | GeneSiC Semiconductor |
Description: MOD THYRISTOR CUSTOM SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GA080TH65-227SP | GeneSiC Semiconductor |
Description: MOD THYRISTOR CUSTOM SOT227Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Structure: Single Current - Gate Trigger (Igt) (Max): 100 mA Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 80 A Current - On State (It (RMS)) (Max): 139 A Voltage - Off State: 6.5 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBPC1510T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 15A GBPCPackaging: Bulk Package / Case: 4-Square, GBPC Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBPC50005W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 50A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBPC5001W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 50A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBPC5002W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 50A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBPC5008W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 50A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GKN130/18 | GeneSiC Semiconductor |
Description: DIODE GP 1.8KV 165A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GKN240/18 | GeneSiC Semiconductor |
Description: DIODE GP 1.8KV 165A DO205AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GKR130/18 | GeneSiC Semiconductor |
Description: DIODE GP 1.8KV 165A DO205AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GKR240/18 | GeneSiC Semiconductor |
Description: DIODE GP 1.8KV 165A DO205AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBPC1501W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 15A KBPC-WPackaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBPC1504W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 15A KBPC-WPackaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBPC1508W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 800V 15A KBPC-WPackaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBPC50005W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 50A KBPC-WPackaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBPC5002W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 50A KBPC-WPackaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KBPC5004W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 50A KBPC-WPackaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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M3P75A-40 | GeneSiC Semiconductor |
Description: DIODE MODULE STD 75A 400V 3PH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR120150CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR120150CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 60A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR120200CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 60A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR120200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 60A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MBR200200CT | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 100A 2 TOWER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBR200200CTR | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 100A 2 TOWER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBR2X030A060 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 30A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X030A080 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 30A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A045 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A060 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A120 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 120V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X050A180 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 180V 50A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A060 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A080 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 80V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A120 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 120V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A150 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 150V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A180 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 180V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X060A200 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 200V 60A SOT227 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X080A060 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X080A080 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X080A120 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 120V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 120 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X080A150 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 150V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X080A180 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 180V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 180 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2X080A200 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 200V 80A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GBPC2508W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.39 EUR |
| 10+ | 5.08 EUR |
| 25+ | 4.64 EUR |
| 100+ | 4.04 EUR |
| 250+ | 3.69 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 3.21 EUR |
| GBPC3508W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 401 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.02 EUR |
| 10+ | 5.63 EUR |
| 25+ | 5.16 EUR |
| 100+ | 4.52 EUR |
| 250+ | 4.15 EUR |
| FST100150 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOT 150V 50A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST100200 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 50A TO249AB
Description: DIODE SCHOTTKY 200V 50A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST120150 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A TO249AB
Description: DIODE SCHOTTKY 150V 60A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST120200 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A TO249AB
Description: DIODE SCHOTTKY 200V 60A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST160150 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 80A TO249AB
Description: DIODE SCHOTTKY 150V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST160200 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 80A TO249AB
Description: DIODE SCHOTTKY 200V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST16020L |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A TO249AB
Description: DIODE SCHOTTKY 20V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST16030L |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A TO249AB
Description: DIODE SCHOTTKY 30V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST16035L |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A TO249AB
Description: DIODE SCHOTTKY 35V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST16040L |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A TO249AB
Description: DIODE SCHOTTKY 40V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST16045L |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A TO249AB
Description: DIODE SCHOTTKY 45V 80A TO249AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA040TH65-227SP |
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Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA060TH65-227SP |
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Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Description: MOD THYRISTOR CUSTOM SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GA080TH65-227SP |
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Hersteller: GeneSiC Semiconductor
Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Description: MOD THYRISTOR CUSTOM SOT227
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Structure: Single
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 80 A
Current - On State (It (RMS)) (Max): 139 A
Voltage - Off State: 6.5 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC1510T |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC50005W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1P 50V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC5001W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC5002W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1P 200V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC5008W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GKN130/18 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA
Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GKN240/18 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB
Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GKR130/18 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AA
Description: DIODE GP 1.8KV 165A DO205AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GKR240/18 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE GP 1.8KV 165A DO205AB
Description: DIODE GP 1.8KV 165A DO205AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC1501W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 100V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC1504W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC1508W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1P 800V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC50005W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1P 50V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC5002W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1P 200V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBPC5004W |
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Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M3P75A-40 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE STD 75A 400V 3PH
Description: DIODE MODULE STD 75A 400V 3PH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR120150CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR120150CTR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR120200CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR120200CTR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR200200CT |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR200200CTR |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X030A060 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE MOD SCHOTT 60V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X030A080 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Description: DIODE MOD SCHOTT 80V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A045 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 50A SOT227
Description: DIODE SCHOTTKY 45V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A060 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 50A SOT227
Description: DIODE SCHOTTKY 60V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A080 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 50A SOT227
Description: DIODE SCHOTTKY 80V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A100 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 50A SOT227
Description: DIODE SCHOTTKY 100V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A120 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 50A SOT227
Description: DIODE SCHOTTKY 120V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A150 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 50A SOT227
Description: DIODE SCHOTTKY 150V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X050A180 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 50A SOT227
Description: DIODE SCHOTTKY 180V 50A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A060 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 60A SOT227
Description: DIODE SCHOTTKY 60V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A080 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 60A SOT227
Description: DIODE SCHOTTKY 80V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A100 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A SOT227
Description: DIODE SCHOTTKY 100V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A120 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 120V 60A SOT227
Description: DIODE SCHOTTKY 120V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A150 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A SOT227
Description: DIODE SCHOTTKY 150V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A180 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 180V 60A SOT227
Description: DIODE SCHOTTKY 180V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X060A200 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A SOT227
Description: DIODE SCHOTTKY 200V 60A SOT227
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X080A060 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE MOD SCHOTT 60V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X080A080 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Description: DIODE MOD SCHOTT 80V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X080A120 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 120V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Description: DIODE MOD SCHOTT 120V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 120 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X080A150 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X080A180 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 180V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Description: DIODE MOD SCHOTT 180V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 180 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2X080A200 |
![]() |
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 80A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 80 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH






