GB01SLT12-252 GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 2.27 EUR |
| 25+ | 2.13 EUR |
| 100+ | 1.95 EUR |
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Technische Details GB01SLT12-252 GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 69pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote GB01SLT12-252
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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GB01SLT12-252 | GeneSiC Semiconductor |
 Description: DIODE SIL CARBIDE 1.2KV 1A TO252Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 69pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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GB01SLT12-252 | GeneSiC Semiconductor |
Description: DIODE SIL CARBIDE 1.2KV 1A TO252 Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 69pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GB01SLT12-252 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GB01SLT12-252 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH