GB02SLT12-214 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.19 EUR |
| 10+ | 4.63 EUR |
| 25+ | 4.42 EUR |
| 100+ | 4.11 EUR |
| 250+ | 3.91 EUR |
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Technische Details GB02SLT12-214 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 131pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote GB02SLT12-214 nach Preis ab 3.66 EUR bis 5.24 EUR
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GB02SLT12-214 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 1200V 2A Standard |
auf Bestellung 6982 Stücke: Lieferzeit 10-14 Tag (e) |
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GB02SLT12-214 | Hersteller : GeneSiC Semiconductor |
Rectifier Diode Schottky SiC 1.2KV 2A 2-Pin SMB |
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GB02SLT12-214 | Hersteller : GeneSiC Semiconductor |
Rectifier Diode Schottky SiC 1.2KV 2A 2-Pin SMB |
Produkt ist nicht verfügbar |
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GB02SLT12-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: DO214 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Max. forward impulse current: 16A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GB02SLT12-214 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
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GB02SLT12-214 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: DO214 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Max. forward impulse current: 16A Kind of package: reel; tape |
Produkt ist nicht verfügbar |