GB02SLT12-214 GeneSiC Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.24 EUR |
| 10+ | 5.53 EUR |
| 25+ | 5.28 EUR |
| 100+ | 4.93 EUR |
| 250+ | 4.69 EUR |
| 500+ | 4.55 EUR |
| 1000+ | 4.36 EUR |
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Technische Details GB02SLT12-214 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 131pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote GB02SLT12-214 nach Preis ab 4.32 EUR bis 9.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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GB02SLT12-214 | Navitas Semiconductor, Inc. |
 Description: DIODE SIL CARB 1200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 131pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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| GB02SLT12-214 |
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Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE SIL CARB 1200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 552 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.42 EUR |
| 10+ | 6.27 EUR |
| 100+ | 4.49 EUR |
| 500+ | 4.32 EUR |