Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5688) > Seite 24 nach 95
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | MSRTA200100(A)D | GeneSiC Semiconductor |  Description: DIODE GEN 1KV 200A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA200120(A)D | GeneSiC Semiconductor |  Description: DIODE GEN 1.2KV 200A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA200140(A)D | GeneSiC Semiconductor |  Description: DIODE GEN 1.4KV 200A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA200160(A)D | GeneSiC Semiconductor |  Description: DIODE GEN 1.6KV 200A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA20060(A)D | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 200A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA20080(A)D | GeneSiC Semiconductor |  Description: DIODE GEN PURP 800V 200A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA30060(A)D | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 300A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MSRTA30080(A)D | GeneSiC Semiconductor |  Description: DIODE GEN PURP 800V 300A 3 TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X030A04 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 30A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X060A10 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1KV 60A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X060A12 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1.2KV 60A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X100A06 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 100A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X100A10 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1KV 100A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X100A12 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1.2KV 100A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X120A02 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 200V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X120A04 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 400V 120A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X120A06 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 120A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X120A10 | GeneSiC Semiconductor |  Description: DIODE MOD GP 1000V 120A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MUR2X120A12 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 1.2KV 120A SOT227 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA20060 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA20060R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA300120 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA300120R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA30020 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA30020R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA30040 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA30040R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA30060 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA30060R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 150A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA400120 | GeneSiC Semiconductor |  Description: DIODE MOD GP 1200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA400120R | GeneSiC Semiconductor |  Description: DIODE MOD GP 1200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA40020 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA40020R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA40040 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA40040R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 400V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA40060 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA40060R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 600V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA500120 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA500120R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA600120 | GeneSiC Semiconductor |  Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MURTA600120R | GeneSiC Semiconductor |  Description: DIODE MODULE GP 1.2KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|  | SD41 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 35V 30A DO4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|  | SD4145 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 30A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|  | SD4145R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY REV 45V 30A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 30A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|  | SD41R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 35V 30A DO4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GA100JT12-227 | GeneSiC Semiconductor |  Description: TRANS SJT 1200V 160A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 100A Power Dissipation (Max): 535W (Tc) Supplier Device Package: SOT-227 Part Status: Obsolete Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GA20SICP12-247 | GeneSiC Semiconductor |  Description: TRANS SJT 1200V 45A TO247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 20A Power Dissipation (Max): 282W (Tc) Supplier Device Package: TO-247AB Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GA50JT12-263 | GeneSiC Semiconductor | Description: TRANSISTOR 1200V 100A TO263-7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GA10SICP12-263 | GeneSiC Semiconductor |  Description: TRANS SJT 1200V 25A D2PAK Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A Power Dissipation (Max): 170W (Tc) Supplier Device Package: TO-263-7 Part Status: Active Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GA100JT17-227 | GeneSiC Semiconductor |  Description: TRANS SJT 1700V 160A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 100A Power Dissipation (Max): 535W (Tc) Supplier Device Package: SOT-227 Part Status: Obsolete Drain to Source Voltage (Vdss): 1700 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GB10SLT12-247D | GeneSiC Semiconductor | Description: DIODE ARRAY SIC 1200V 12A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GB20SLT12-247D | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 1.2KV 25A TO247D Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRT40045DL | GeneSiC Semiconductor | Description: DIODE SCHOTT 45V 200A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -40°C ~ 100°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|  | MURH7020 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 200V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|  | MURH7020R | GeneSiC Semiconductor |  Description: DIODE GEN PURP 200V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT14020 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 200V 70A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | FST63100M | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 100V 30A D61-3M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | FST6310M | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 10V 30A D61-3M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | FST6315M | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 15V 30A D61-3M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | FST6320M | GeneSiC Semiconductor | Description: DIODE SCHOTTKY 20V 30A D61-3M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
| MSRTA200100(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 200A 3 TOWER
    Description: DIODE GEN 1KV 200A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA200120(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
    Description: DIODE GEN 1.2KV 200A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA200140(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 200A 3 TOWER
    Description: DIODE GEN 1.4KV 200A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA200160(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 200A 3 TOWER
    Description: DIODE GEN 1.6KV 200A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA20060(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A 3 TOWER
    Description: DIODE GEN PURP 600V 200A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA20080(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 200A 3 TOWER
    Description: DIODE GEN PURP 800V 200A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA30060(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 300A 3 TOWER
    Description: DIODE GEN PURP 600V 300A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MSRTA30080(A)D |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 300A 3 TOWER
    Description: DIODE GEN PURP 800V 300A 3 TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X030A04 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X060A10 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 60A SOT227
    Description: DIODE GEN PURP 1KV 60A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X060A12 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 60A SOT227
    Description: DIODE GEN PURP 1.2KV 60A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X100A06 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A SOT227
    Description: DIODE GEN PURP 600V 100A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X100A10 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 100A SOT227
    Description: DIODE GEN PURP 1KV 100A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X100A12 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 100A SOT227
    Description: DIODE GEN PURP 1.2KV 100A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X120A02 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE GEN PURP 200V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X120A04 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 120A SOT227
    Description: DIODE GEN PURP 400V 120A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X120A06 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE GEN PURP 600V 120A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X120A10 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 120A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
    Description: DIODE MOD GP 1000V 120A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 120 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MUR2X120A12 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 120A SOT227
    Description: DIODE GEN PURP 1.2KV 120A SOT227
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA20060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA20060R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA300120 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA300120R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA30020 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA30020R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA30040 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA30040R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA30060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA30060R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA400120 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MOD GP 1200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA400120R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MOD GP 1200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA40020 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA40020R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA40040 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA40040R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA40060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA40060R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA500120 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA500120R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA600120 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURTA600120R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
    Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SD41 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 30A DO4
    Description: DIODE SCHOTTKY 35V 30A DO4
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SD4145 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
    Description: DIODE SCHOTTKY 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SD4145R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
    Description: DIODE SCHOTTKY REV 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SD41R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 30A DO4
    Description: DIODE SCHOTTKY 35V 30A DO4
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GA100JT12-227 |  | 
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
    Description: TRANS SJT 1200V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GA20SICP12-247 |  | 
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
    Description: TRANS SJT 1200V 45A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GA50JT12-263 | 
Hersteller: GeneSiC Semiconductor
Description: TRANSISTOR 1200V 100A TO263-7
    Description: TRANSISTOR 1200V 100A TO263-7
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GA10SICP12-263 |  | 
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
    Description: TRANS SJT 1200V 25A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GA100JT17-227 |  | 
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
    Description: TRANS SJT 1700V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GB10SLT12-247D | 
Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY SIC 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
    Description: DIODE ARRAY SIC 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GB20SLT12-247D | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 25A TO247D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
    Description: DIODE SCHOTTKY 1.2KV 25A TO247D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRT40045DL | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
    Description: DIODE SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7020 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7020R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT14020 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A TO249AB
    Description: DIODE GEN PURP 200V 70A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FST63100M |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 30A D61-3M
    Description: DIODE SCHOTTKY 100V 30A D61-3M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FST6310M |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 10V 30A D61-3M
    Description: DIODE SCHOTTKY 10V 30A D61-3M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FST6315M |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 15V 30A D61-3M
    Description: DIODE SCHOTTKY 15V 30A D61-3M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FST6320M | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 30A D61-3M
    Description: DIODE SCHOTTKY 20V 30A D61-3M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH