Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5688) > Seite 29 nach 95
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | MBRTA80040R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 40V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80040RL | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 40V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80045 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80045L | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80045R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80045RL | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 45V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80060 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 60V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80060R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 60V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80080 | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 80V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | MBRTA80080R | GeneSiC Semiconductor |  Description: DIODE SCHOTTKY 80V 400A 3TOWER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
| MURF30005 | GeneSiC Semiconductor | Description: DIODE GEN PURP 50V 150A TO244 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30005R | GeneSiC Semiconductor | Description: DIODE GEN PURP 50V 150A TO244 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30010 | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 150A TO244 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30010R | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 150A TO244 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30020 | GeneSiC Semiconductor | Description: DIODE MODULE GP 200V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30020R | GeneSiC Semiconductor | Description: DIODE MODULE GP 200V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30040 | GeneSiC Semiconductor | Description: DIODE MODULE GP 400V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30040R | GeneSiC Semiconductor | Description: DIODE MODULE GP 400V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30060 | GeneSiC Semiconductor | Description: DIODE MODULE GP 600V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF30060R | GeneSiC Semiconductor | Description: DIODE MODULE GP 600V 150A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40005 | GeneSiC Semiconductor | Description: DIODE GEN PURP 50V 200A TO244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40005R | GeneSiC Semiconductor | Description: DIODE GEN PURP 50V 200A TO244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40010 | GeneSiC Semiconductor | Description: DIODE MODULE GP 100V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40010R | GeneSiC Semiconductor | Description: DIODE MODULE GP 100V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40020 | GeneSiC Semiconductor | Description: DIODE MODULE GP 200V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40020R | GeneSiC Semiconductor | Description: DIODE MODULE GP 200V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40040 | GeneSiC Semiconductor | Description: DIODE MODULE GP 400V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40040R | GeneSiC Semiconductor | Description: DIODE MODULE GP 400V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40060 | GeneSiC Semiconductor | Description: DIODE MODULE GP 600V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURF40060R | GeneSiC Semiconductor | Description: DIODE MODULE GP 600V 200A TO-244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: TO-244 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7005 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 50V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7005R | GeneSiC Semiconductor |  Description: DIODE GEN PURP 50V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7010 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 100V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7010R | GeneSiC Semiconductor |  Description: DIODE GEN PURP 100V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7040 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 400V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7040R | GeneSiC Semiconductor |  Description: DIODE GEN PURP 400V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7060 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
| MURH7060R | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 70A D-67 Packaging: Bulk Package / Case: D-67 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |
|   | UFT10005 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 50V 50A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT10010 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 100V 50A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT10020 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 200V 50A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT10040 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 400V 50A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT10060 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 50A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT14005 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 50V 70A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT14010 | GeneSiC Semiconductor | Description: DIODE GEN PURP 100V 70A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT14040 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 400V 70A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT14060 | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 70A TO249AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT7340M | GeneSiC Semiconductor |  Description: DIODE GEN PURP 400V 70A D61-3M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | UFT7360M | GeneSiC Semiconductor |  Description: DIODE GEN PURP 600V 70A D61-3M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GB01SLT12-252 | GeneSiC Semiconductor |  Description: DIODE SIL CARBIDE 1.2KV 1A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 69pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC02MPS12-220 | GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 12A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 127pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC2X5MPS12-247 | GeneSiC Semiconductor |  Description: DIODE ARR SIC 1200V 27A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 27A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 4 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC2X8MPS12-247 | GeneSiC Semiconductor |  Description: DIODE ARR SIC 1200V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 7 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC08MPS12-220 | GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 43A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 545pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 7 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC2X10MPS12-247 | GeneSiC Semiconductor |  Description: DIODE ARR SIC 1200V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC10MPS12-220 | GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 54A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 660pF @ 1V, 1MHz Current - Average Rectified (Io): 54A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC10MPS12-252 | GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 50A TO2522 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 660pF @ 1V, 1MHz Current - Average Rectified (Io): 50A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC10MPS12-252 | GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 50A TO2522 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 660pF @ 1V, 1MHz Current - Average Rectified (Io): 50A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC2X15MPS12-247 | GeneSiC Semiconductor |  Description: DIODE ARR SIC 1200V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 75A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 14 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
|   | GC15MPS12-247 | GeneSiC Semiconductor |  Description: DIODE SIL CARB 1200V 75A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1089pF @ 1V, 1MHz Current - Average Rectified (Io): 75A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 14 µA @ 1200 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
| MBRTA80040R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
    Description: DIODE SCHOTTKY 40V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80040RL |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 400A 3TOWER
    Description: DIODE SCHOTTKY 40V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80045 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
    Description: DIODE SCHOTTKY 45V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80045L |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
    Description: DIODE SCHOTTKY 45V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80045R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
    Description: DIODE SCHOTTKY 45V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80045RL |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 400A 3TOWER
    Description: DIODE SCHOTTKY 45V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
    Description: DIODE SCHOTTKY 60V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80060R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 400A 3TOWER
    Description: DIODE SCHOTTKY 60V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80080 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
    Description: DIODE SCHOTTKY 80V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRTA80080R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 400A 3TOWER
    Description: DIODE SCHOTTKY 80V 400A 3TOWER
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30005 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
    Description: DIODE GEN PURP 50V 150A TO244
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30005R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 150A TO244
    Description: DIODE GEN PURP 50V 150A TO244
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30010 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
    Description: DIODE GEN PURP 100V 150A TO244
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30010R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 150A TO244
    Description: DIODE GEN PURP 100V 150A TO244
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30020 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30020R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30040 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30040R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30060 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF30060R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 150A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40005 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
    Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40005R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
    Description: DIODE GEN PURP 50V 200A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40010 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
    Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40010R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
    Description: DIODE MODULE GP 100V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40020 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40020R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
    Description: DIODE MODULE GP 200V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURF40040 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| MURF40040R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE MODULE GP 400V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| MURF40060 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| MURF40060R | 
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE MODULE GP 600V 200A TO-244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7005 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
    Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| MURH7005R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
    Description: DIODE GEN PURP 50V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7010 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
    Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7010R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
    Description: DIODE GEN PURP 100V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7040 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7040R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
    Description: DIODE GEN PURP 400V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MURH7060R |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
    Description: DIODE GEN PURP 600V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT10005 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 50A TO249AB
    Description: DIODE GEN PURP 50V 50A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT10010 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A TO249AB
    Description: DIODE GEN PURP 100V 50A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT10020 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A TO249AB
    Description: DIODE GEN PURP 200V 50A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT10040 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 50A TO249AB
    Description: DIODE GEN PURP 400V 50A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT10060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 50A TO249AB
    Description: DIODE GEN PURP 600V 50A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT14005 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 70A TO249AB
    Description: DIODE GEN PURP 50V 70A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT14010 | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 70A TO249AB
    Description: DIODE GEN PURP 100V 70A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT14040 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A TO249AB
    Description: DIODE GEN PURP 400V 70A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT14060 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A TO249AB
    Description: DIODE GEN PURP 600V 70A TO249AB
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT7340M |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 70A D61-3M
    Description: DIODE GEN PURP 400V 70A D61-3M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| UFT7360M |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 70A D61-3M
    Description: DIODE GEN PURP 600V 70A D61-3M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GB01SLT12-252 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
    Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GC02MPS12-220 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 12A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
    Description: DIODE SIL CARB 1200V 12A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GC2X5MPS12-247 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
    Description: DIODE ARR SIC 1200V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 27A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GC2X8MPS12-247 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
    Description: DIODE ARR SIC 1200V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GC08MPS12-220 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 43A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
    Description: DIODE SIL CARB 1200V 43A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Produkt ist nicht verfügbar
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| GC2X10MPS12-247 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
    Description: DIODE ARR SIC 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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| GC10MPS12-220 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 54A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
    Description: DIODE SIL CARB 1200V 54A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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| GC10MPS12-252 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
    Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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| GC10MPS12-252 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
    Description: DIODE SIL CARB 1200V 50A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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| GC2X15MPS12-247 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
    Description: DIODE ARR SIC 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Produkt ist nicht verfügbar
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| GC15MPS12-247 |  | 
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
    Description: DIODE SIL CARB 1200V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH