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GD30MPS12J GeneSiC Semiconductor Description: 1200V 30A TO-263-7 SIC SCHOTTKY
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.62 EUR
10+17.66 EUR
25+16.93 EUR
100+15.9 EUR
250+15.83 EUR
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GC50MPS33H GC50MPS33H GeneSiC Semiconductor GC50MPS33H.pdf Description: DIODE SIL CARB 3.3KV 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
auf Bestellung 78 Stücke:
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1+413.44 EUR
10+390.73 EUR
25+382.03 EUR
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GE04MPS06E GE04MPS06E GeneSiC Semiconductor GE04MPS06E.pdf Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
auf Bestellung 2420 Stücke:
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7+2.9 EUR
10+2.52 EUR
25+2.38 EUR
100+2.19 EUR
250+2.07 EUR
500+1.98 EUR
1000+1.9 EUR
Mindestbestellmenge: 7
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GD60MPS17H GD60MPS17H GeneSiC Semiconductor GD60MPS17H.pdf Description: DIODE SIL CARB 1.7KV 122A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4577pF @ 1V, 1MHz
Current - Average Rectified (Io): 122A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
auf Bestellung 170 Stücke:
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1+74.89 EUR
10+69.26 EUR
25+67.15 EUR
100+64.06 EUR
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GD10MPS12H GD10MPS12H GeneSiC Semiconductor GD10MPS12H.pdf Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.88 EUR
10+7 EUR
25+6.67 EUR
100+6.21 EUR
250+5.93 EUR
500+5.71 EUR
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GD30MPS06A GD30MPS06A GeneSiC Semiconductor GD30MPS06A.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 1744 Stücke:
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3+8.61 EUR
10+7.65 EUR
25+7.31 EUR
100+6.8 EUR
250+6.5 EUR
500+6.28 EUR
1000+6.06 EUR
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GD2X30MPS12N GD2X30MPS12N GeneSiC Semiconductor GD2X30MPS12N.pdf Description: 1200V 60A SOT-227 SIC SCHOTTKY M
auf Bestellung 440 Stücke:
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1+61.2 EUR
10+56.2 EUR
25+54.32 EUR
100+52.65 EUR
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G3R20MT17N G3R20MT17N GeneSiC Semiconductor G3R20MT17N.pdf Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 96 Stücke:
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10+212.01 EUR
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GD2X100MPS12N GD2X100MPS12N GeneSiC Semiconductor GD2X100MPS12N.pdf Description: DIODE MOD SIC 1200V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
auf Bestellung 97 Stücke:
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1+139.02 EUR
10+128.12 EUR
25+124 EUR
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G3R60MT07J GeneSiC Semiconductor G3R60MT07J.pdf Description: 750V 60M TO-263-7 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
auf Bestellung 1348 Stücke:
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2+17.18 EUR
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G3R60MT07K G3R60MT07K GeneSiC Semiconductor G3R60MT07K.pdf Description: 750V 60M TO-247-4 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-247-4
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
auf Bestellung 1079 Stücke:
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2+17.53 EUR
10+15.91 EUR
25+15.32 EUR
100+14.46 EUR
250+13.9 EUR
500+13.51 EUR
1000+13.13 EUR
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G3R160MT17D G3R160MT17D GeneSiC Semiconductor G3R160MT17D.pdf Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
auf Bestellung 1018 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.87 EUR
10+17.97 EUR
25+17.26 EUR
100+16.25 EUR
250+15.62 EUR
500+15.15 EUR
1000+14.69 EUR
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G3R160MT17J G3R160MT17J GeneSiC Semiconductor G3R160MT17J.pdf Description: SIC MOSFET N-CH 18A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
Produkt ist nicht verfügbar
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G3R20MT12N G3R20MT12N GeneSiC Semiconductor G3R20MT12N.pdf Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
1+94.3 EUR
10+86.9 EUR
25+84.12 EUR
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GC05MPS33J GC05MPS33J GeneSiC Semiconductor sic-schottky-mps-selector-guide.pdf Description: DIODE SIL CARB 3300V 5A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Produkt ist nicht verfügbar
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GC05MPS12-220 GC05MPS12-220 GeneSiC Semiconductor GC05MPS12-220.pdf Description: DIODE SIL CARB 1200V 29A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
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GBPC1506W GBPC1506W GeneSiC Semiconductor gbpc1506t.pdf Description: BRIDGE RECT 1P 600V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GD2X50MPS12N GD2X50MPS12N GeneSiC Semiconductor GD2X50MPS12N.pdf Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
auf Bestellung 221 Stücke:
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1+78.16 EUR
10+71.67 EUR
25+69.25 EUR
100+65.73 EUR
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GD2X30MPS06D GD2X30MPS06D GeneSiC Semiconductor GD2X30MPS06D.pdf Description: DIODE ARR SIC 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.75 EUR
10+14.15 EUR
25+13.56 EUR
100+12.72 EUR
250+12.19 EUR
500+11.8 EUR
Mindestbestellmenge: 2
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GD20MPS12A GD20MPS12A GeneSiC Semiconductor GD20MPS12A.pdf Description: DIODE SIL CARB 1200V 42A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 2283 Stücke:
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2+9.87 EUR
10+8.85 EUR
25+8.46 EUR
100+7.92 EUR
250+7.58 EUR
500+7.33 EUR
1000+7.1 EUR
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G3R12MT12K G3R12MT12K GeneSiC Semiconductor G3R12MT12K.pdf Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
auf Bestellung 466 Stücke:
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1+95.96 EUR
10+89.35 EUR
25+86.84 EUR
100+83.19 EUR
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GD60MPS06H GD60MPS06H GeneSiC Semiconductor GD60MPS06H.pdf Description: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 804 Stücke:
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2+17.41 EUR
10+15.65 EUR
25+15.01 EUR
100+14.1 EUR
250+13.51 EUR
500+13.09 EUR
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GD2X30MPS12D GD2X30MPS12D GeneSiC Semiconductor GD2X30MPS12D.pdf Description: DIODE ARR SIC 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 569 Stücke:
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1+29.22 EUR
10+26.66 EUR
25+25.72 EUR
100+24.33 EUR
250+23.47 EUR
500+22.83 EUR
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GD30MPS12H GD30MPS12H GeneSiC Semiconductor GD30MPS12H.pdf Description: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 155 Stücke:
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2+15.29 EUR
10+13.74 EUR
25+13.17 EUR
100+12.36 EUR
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GD20MPS12H GD20MPS12H GeneSiC Semiconductor GD20MPS12H.pdf Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 2914 Stücke:
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2+11.07 EUR
10+9.93 EUR
25+9.52 EUR
100+8.93 EUR
250+8.56 EUR
500+8.29 EUR
1000+8.03 EUR
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GD2X20MPS12D GD2X20MPS12D GeneSiC Semiconductor GD2X20MPS12D.pdf Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 193 Stücke:
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1+18.85 EUR
10+17.05 EUR
25+16.37 EUR
100+15.41 EUR
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MSRT200120A MSRT200120A GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200140A MSRT200140A GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200100A MSRT200100A GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200160A MSRT200160A GeneSiC Semiconductor Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200120AD MSRT200120AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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MSRT200100AD MSRT200100AD GeneSiC Semiconductor Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT200160AD MSRT200160AD GeneSiC Semiconductor Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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MSRT200140AD MSRT200140AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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GD2X60MPS06N GD2X60MPS06N GeneSiC Semiconductor GD2X60MPS06N.pdf Description: DIODE MOD SIC 650V 70A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 369 Stücke:
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100+49.17 EUR
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GB10SLT12-214 GeneSiC Semiconductor Description: SIC SCHOTTKY DIODE 1200V 10A
Produkt ist nicht verfügbar
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MSRTA30080A MSRTA30080A GeneSiC Semiconductor Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MSRTA30080AD MSRTA30080AD GeneSiC Semiconductor Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Produkt ist nicht verfügbar
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KBL403G GeneSiC Semiconductor KBL401G%7EKBL404G.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBPC2510W GBPC2510W GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 629 Stücke:
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3+7.08 EUR
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100+4.48 EUR
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GBU8G GBU8G GeneSiC Semiconductor gbu8a.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 7477 Stücke:
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GBPC2502W GBPC2502W GeneSiC Semiconductor gbpc25005t.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4077 Stücke:
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3+6.48 EUR
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1N1184A 1N1184A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE STANDARD 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 256 Stücke:
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2+15.96 EUR
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1N1186A 1N1186A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE STANDARD 200V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 329 Stücke:
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MSRT10060AD MSRT10060AD GeneSiC Semiconductor msrt10060ad.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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KBP201G KBP201G GeneSiC Semiconductor kbp201g.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBPC5006W KBPC5006W GeneSiC Semiconductor kbpc5006t.pdf Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBU10B GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 7485 Stücke:
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7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
500+1.08 EUR
1000+0.97 EUR
2500+0.85 EUR
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MSRTA400120A MSRTA400120A GeneSiC Semiconductor MSRTA400120(A)~MSRTA400160(A).pdf Description: DIODE MODULE 1.2KV 400A 3TOWER
Produkt ist nicht verfügbar
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GD2X25MPS17N GD2X25MPS17N GeneSiC Semiconductor GD2X25MPS17N.pdf Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 158 Stücke:
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GD2X150MPS06N GD2X150MPS06N GeneSiC Semiconductor GD2X150MPS06N.pdf Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 352 Stücke:
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1+103.24 EUR
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GBU8D GBU8D GeneSiC Semiconductor gbu8a.pdf Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5523 Stücke:
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7+2.62 EUR
10+1.86 EUR
25+1.61 EUR
100+1.3 EUR
250+1.13 EUR
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1000+0.92 EUR
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1N3892 1N3892 GeneSiC Semiconductor 1n3889.pdf Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 88 Stücke:
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2+15.66 EUR
10+12.72 EUR
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MBR6045 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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KBP206 GeneSiC Semiconductor KBP206%7EKBP210.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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1N1183A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ25J GeneSiC Semiconductor gbj25m.pdf Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBJ25G GeneSiC Semiconductor gbj25g.pdf Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ25D GeneSiC Semiconductor gbj25g.pdf Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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GBJ25M GeneSiC Semiconductor gbj25m.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GD30MPS12J
Hersteller: GeneSiC Semiconductor
Description: 1200V 30A TO-263-7 SIC SCHOTTKY
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.62 EUR
10+17.66 EUR
25+16.93 EUR
100+15.9 EUR
250+15.83 EUR
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GC50MPS33H GC50MPS33H.pdf
GC50MPS33H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 3.3KV 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+413.44 EUR
10+390.73 EUR
25+382.03 EUR
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GE04MPS06E GE04MPS06E.pdf
GE04MPS06E
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
auf Bestellung 2420 Stücke:
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Anzahl Preis
7+2.9 EUR
10+2.52 EUR
25+2.38 EUR
100+2.19 EUR
250+2.07 EUR
500+1.98 EUR
1000+1.9 EUR
Mindestbestellmenge: 7
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GD60MPS17H GD60MPS17H.pdf
GD60MPS17H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 122A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4577pF @ 1V, 1MHz
Current - Average Rectified (Io): 122A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+74.89 EUR
10+69.26 EUR
25+67.15 EUR
100+64.06 EUR
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GD10MPS12H GD10MPS12H.pdf
GD10MPS12H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+7 EUR
25+6.67 EUR
100+6.21 EUR
250+5.93 EUR
500+5.71 EUR
Mindestbestellmenge: 3
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GD30MPS06A GD30MPS06A.pdf
GD30MPS06A
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 1744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.61 EUR
10+7.65 EUR
25+7.31 EUR
100+6.8 EUR
250+6.5 EUR
500+6.28 EUR
1000+6.06 EUR
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GD2X30MPS12N GD2X30MPS12N.pdf
GD2X30MPS12N
Hersteller: GeneSiC Semiconductor
Description: 1200V 60A SOT-227 SIC SCHOTTKY M
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.2 EUR
10+56.2 EUR
25+54.32 EUR
100+52.65 EUR
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G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+227.3 EUR
10+212.01 EUR
25+206.22 EUR
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GD2X100MPS12N GD2X100MPS12N.pdf
GD2X100MPS12N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+139.02 EUR
10+128.12 EUR
25+124 EUR
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G3R60MT07J G3R60MT07J.pdf
Hersteller: GeneSiC Semiconductor
Description: 750V 60M TO-263-7 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
auf Bestellung 1348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.18 EUR
Mindestbestellmenge: 2
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G3R60MT07K G3R60MT07K.pdf
G3R60MT07K
Hersteller: GeneSiC Semiconductor
Description: 750V 60M TO-247-4 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-247-4
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
auf Bestellung 1079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.53 EUR
10+15.91 EUR
25+15.32 EUR
100+14.46 EUR
250+13.9 EUR
500+13.51 EUR
1000+13.13 EUR
Mindestbestellmenge: 2
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G3R160MT17D G3R160MT17D.pdf
G3R160MT17D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
auf Bestellung 1018 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.87 EUR
10+17.97 EUR
25+17.26 EUR
100+16.25 EUR
250+15.62 EUR
500+15.15 EUR
1000+14.69 EUR
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G3R160MT17J G3R160MT17J.pdf
G3R160MT17J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 18A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
Produkt ist nicht verfügbar
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G3R20MT12N G3R20MT12N.pdf
G3R20MT12N
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+94.3 EUR
10+86.9 EUR
25+84.12 EUR
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GC05MPS33J sic-schottky-mps-selector-guide.pdf
GC05MPS33J
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 3300V 5A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Produkt ist nicht verfügbar
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GC05MPS12-220 GC05MPS12-220.pdf
GC05MPS12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 29A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
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GBPC1506W gbpc1506t.pdf
GBPC1506W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GD2X50MPS12N GD2X50MPS12N.pdf
GD2X50MPS12N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+78.16 EUR
10+71.67 EUR
25+69.25 EUR
100+65.73 EUR
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GD2X30MPS06D GD2X30MPS06D.pdf
GD2X30MPS06D
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.75 EUR
10+14.15 EUR
25+13.56 EUR
100+12.72 EUR
250+12.19 EUR
500+11.8 EUR
Mindestbestellmenge: 2
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GD20MPS12A GD20MPS12A.pdf
GD20MPS12A
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 42A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 2283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.87 EUR
10+8.85 EUR
25+8.46 EUR
100+7.92 EUR
250+7.58 EUR
500+7.33 EUR
1000+7.1 EUR
Mindestbestellmenge: 2
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G3R12MT12K G3R12MT12K.pdf
G3R12MT12K
Hersteller: GeneSiC Semiconductor
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+95.96 EUR
10+89.35 EUR
25+86.84 EUR
100+83.19 EUR
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GD60MPS06H GD60MPS06H.pdf
GD60MPS06H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.41 EUR
10+15.65 EUR
25+15.01 EUR
100+14.1 EUR
250+13.51 EUR
500+13.09 EUR
Mindestbestellmenge: 2
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GD2X30MPS12D GD2X30MPS12D.pdf
GD2X30MPS12D
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.22 EUR
10+26.66 EUR
25+25.72 EUR
100+24.33 EUR
250+23.47 EUR
500+22.83 EUR
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GD30MPS12H GD30MPS12H.pdf
GD30MPS12H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.29 EUR
10+13.74 EUR
25+13.17 EUR
100+12.36 EUR
Mindestbestellmenge: 2
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GD20MPS12H GD20MPS12H.pdf
GD20MPS12H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 2914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.07 EUR
10+9.93 EUR
25+9.52 EUR
100+8.93 EUR
250+8.56 EUR
500+8.29 EUR
1000+8.03 EUR
Mindestbestellmenge: 2
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GD2X20MPS12D GD2X20MPS12D.pdf
GD2X20MPS12D
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.85 EUR
10+17.05 EUR
25+16.37 EUR
100+15.41 EUR
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MSRT200120A
MSRT200120A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200140A
MSRT200140A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200100A MSRT20060%7E200100%28A%29.pdf
MSRT200100A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT200160A
MSRT200160A
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRT200120AD
MSRT200120AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRT200100AD
MSRT200100AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRT200160AD
MSRT200160AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRT200140AD
MSRT200140AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD2X60MPS06N GD2X60MPS06N.pdf
GD2X60MPS06N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 70A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.26 EUR
10+53.51 EUR
25+51.73 EUR
100+49.17 EUR
250+47.53 EUR
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GB10SLT12-214
Hersteller: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1200V 10A
Produkt ist nicht verfügbar
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MSRTA30080A
MSRTA30080A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRTA30080AD
MSRTA30080AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Produkt ist nicht verfügbar
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KBL403G KBL401G%7EKBL404G.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBPC2510W gbpc2506t.pdf
GBPC2510W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.08 EUR
10+5.63 EUR
25+5.14 EUR
100+4.48 EUR
250+4.09 EUR
500+3.81 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GBU8G gbu8a.pdf
GBU8G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 7477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+1.86 EUR
25+1.61 EUR
100+1.3 EUR
250+1.13 EUR
500+1.02 EUR
1000+0.92 EUR
2500+0.8 EUR
Mindestbestellmenge: 7
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GBPC2502W gbpc25005t.pdf
GBPC2502W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
10+5.15 EUR
25+4.7 EUR
100+4.1 EUR
250+3.74 EUR
500+3.49 EUR
1000+3.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
1N1184A 1n1183a.pdf
1N1184A
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.96 EUR
10+13.36 EUR
25+12.44 EUR
100+11.18 EUR
250+10.41 EUR
Mindestbestellmenge: 2
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1N1186A 1n1183a.pdf
1N1186A
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 200V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.91 EUR
10+13.31 EUR
25+12.4 EUR
100+11.13 EUR
250+10.37 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MSRT10060AD msrt10060ad.pdf
MSRT10060AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBP201G kbp201g.pdf
KBP201G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBPC5006W kbpc5006t.pdf
KBPC5006W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBU10B gbu10a.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 7485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
500+1.08 EUR
1000+0.97 EUR
2500+0.85 EUR
Mindestbestellmenge: 7
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MSRTA400120A MSRTA400120(A)~MSRTA400160(A).pdf
MSRTA400120A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 400A 3TOWER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD2X25MPS17N GD2X25MPS17N.pdf
GD2X25MPS17N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.1 EUR
10+78.21 EUR
25+75.63 EUR
100+71.88 EUR
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GD2X150MPS06N GD2X150MPS06N.pdf
GD2X150MPS06N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+103.24 EUR
10+95.43 EUR
25+92.49 EUR
100+88.2 EUR
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GBU8D gbu8a.pdf
GBU8D
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+1.86 EUR
25+1.61 EUR
100+1.3 EUR
250+1.13 EUR
500+1.02 EUR
1000+0.92 EUR
2500+0.8 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
1N3892 1n3889.pdf
1N3892
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.66 EUR
10+12.72 EUR
25+11.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MBR6045 mbr60100.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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KBP206 KBP206%7EKBP210.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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1N1183A 1n1183a.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ25J gbj25m.pdf
Hersteller: GeneSiC Semiconductor
Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBJ25G gbj25g.pdf
Hersteller: GeneSiC Semiconductor
Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ25D gbj25g.pdf
Hersteller: GeneSiC Semiconductor
Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ25M gbj25m.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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