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GC15MPS12-220 GC15MPS12-220 GeneSiC Semiconductor GC15MPS12-220.pdf Description: DIODE SIL CARB 1200V 82A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Produkt ist nicht verfügbar
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GC20MPS12-220 GC20MPS12-220 GeneSiC Semiconductor GC20MPS12-220.pdf Description: DIODE SIL CARB 1200V 94A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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GC2X20MPS12-247 GC2X20MPS12-247 GeneSiC Semiconductor GC2X20MPS12-247.pdf Description: DIODE ARR SIC 1200V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 90A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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GC20MPS12-247 GC20MPS12-247 GeneSiC Semiconductor GC20MPS12-247.pdf Description: DIODE SIL CARB 1200V 90A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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GB2X50MPS12-227 GB2X50MPS12-227 GeneSiC Semiconductor GB2X50MPS12-227.pdf Description: DIODE MOD SIC 1200V 93A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 93A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 248 Stücke:
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1+134.53 EUR
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GC50MPS12-247 GC50MPS12-247 GeneSiC Semiconductor GC50MPS12-247.pdf Description: DIODE SIL CARB 1200V 212A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3263pF @ 1V, 1MHz
Current - Average Rectified (Io): 212A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Produkt ist nicht verfügbar
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GB2X100MPS12-227 GB2X100MPS12-227 GeneSiC Semiconductor GB2X100MPS12-227.pdf Description: DIODE MOD SIC 1200V 185A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 185A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 2 Stücke:
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GB2X50MPS17-227 GB2X50MPS17-227 GeneSiC Semiconductor GB2X50MPS17-227.pdf Description: DIODE MOD SIC 1700V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 50 µA @ 1700 V
auf Bestellung 9 Stücke:
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GB05MPS33-263 GB05MPS33-263 GeneSiC Semiconductor GB05MPS33-263.pdf Description: DIODE SIL CARB 3300V 14A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
auf Bestellung 166 Stücke:
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1+45.74 EUR
10+41.88 EUR
25+40.45 EUR
100+38.35 EUR
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KBJ401G GeneSiC Semiconductor kbj4005g.pdf Description: BRIDGE RECT 1PHASE 100V 4A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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KBPC5001T KBPC5001T GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1PHASE 100V 50A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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KBPC5001W KBPC5001W GeneSiC Semiconductor kbpc50005t.pdf Description: BRIDGE RECT 1P 100V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GB10MPS17-247 GB10MPS17-247 GeneSiC Semiconductor GB10MPS17-247.pdf Description: DIODE SIL CARB 1700V 50A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Produkt ist nicht verfügbar
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GC50MPS06-247 GC50MPS06-247 GeneSiC Semiconductor GC50MPS06-247.pdf Description: DIODE SIL CARB 650V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 29 Stücke:
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1+22.55 EUR
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GC2X50MPS06-227 GC2X50MPS06-227 GeneSiC Semiconductor GC2X50MPS06-227.pdf Description: DIODE MOD SCHOT 650V 104A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 104A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Produkt ist nicht verfügbar
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GC2X100MPS06-227 GC2X100MPS06-227 GeneSiC Semiconductor GC2X100MPS06-227.pdf Description: DIODE MOD SCHOT 650V 209A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 209A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
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GE06MPS06E GeneSiC Semiconductor GE06MPS06E.pdf Description: DIODE SIL CARB 650V 17A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GE08MPS06E GeneSiC Semiconductor GE08MPS06E.pdf Description: DIODE SIL CARB 650V 21A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GE10MPS06E GeneSiC Semiconductor GE10MPS06E.pdf Description: DIODE SIL CARB 650V 26A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GE06MPS06A GE06MPS06A GeneSiC Semiconductor GE06MPS06A.pdf Description: 650V 6A TO-220-2 SIC SCHOTTKY MP
auf Bestellung 3294 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.15 EUR
10+3.62 EUR
25+3.43 EUR
100+3.15 EUR
250+2.99 EUR
500+2.97 EUR
Mindestbestellmenge: 5
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GE08MPS06A GE08MPS06A GeneSiC Semiconductor GE08MPS06A.pdf Description: DIODE SIL CARB 650V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 3 Stücke:
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GE10MPS06A GE10MPS06A GeneSiC Semiconductor GE10MPS06A.pdf Description: 650V 10A TO-220-2 SIC SCHOTTKY M
auf Bestellung 870 Stücke:
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4+5.81 EUR
10+5.12 EUR
25+4.86 EUR
100+4.51 EUR
250+4.28 EUR
500+4.12 EUR
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GE2X8MPS06D GE2X8MPS06D GeneSiC Semiconductor GE2X8MPS06D.pdf Description: 650V 16A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 19A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 58 Stücke:
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2+9.13 EUR
10+8.13 EUR
25+7.76 EUR
Mindestbestellmenge: 2
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GE2X10MPS06D GE2X10MPS06D GeneSiC Semiconductor GE2X10MPS06D.pdf Description: 650V 20A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GD30MPS06H GD30MPS06H GeneSiC Semiconductor GD30MPS06H.pdf Description: DIODE SIL CARB 650V 49A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 484 Stücke:
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10+9.29 EUR
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100+8.38 EUR
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GD30MPS06J GD30MPS06J GeneSiC Semiconductor GD30MPS06J.pdf Description: DIODE SIL CARB 650V 51A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 733 Stücke:
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10+10.12 EUR
25+9.69 EUR
100+9.19 EUR
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GD2X30MPS06N GD2X30MPS06N GeneSiC Semiconductor GD2X30MPS06N.pdf Description: 650V 60A SOT-227 SIC SCHOTTKY MP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 42A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GB05MPS17-247 GB05MPS17-247 GeneSiC Semiconductor GB05MPS17-247.pdf Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Produkt ist nicht verfügbar
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G3R350MT12D G3R350MT12D GeneSiC Semiconductor G3R350MT12D.pdf Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
auf Bestellung 7229 Stücke:
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3+7.11 EUR
10+6.31 EUR
25+6.01 EUR
100+5.6 EUR
250+5.34 EUR
500+5.16 EUR
1000+4.97 EUR
2500+4.74 EUR
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G3R160MT12D G3R160MT12D GeneSiC Semiconductor G3R160MT12D.pdf Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
auf Bestellung 1425 Stücke:
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2+9.79 EUR
10+8.78 EUR
25+8.4 EUR
100+7.86 EUR
250+7.53 EUR
500+7.28 EUR
1000+7.05 EUR
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G3R75MT12D G3R75MT12D GeneSiC Semiconductor G3R75MT12D.pdf Description: SIC MOSFET N-CH 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
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G3R40MT12D G3R40MT12D GeneSiC Semiconductor G3R40MT12D.pdf Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
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G2R1000MT33J G2R1000MT33J GeneSiC Semiconductor G2R1000MT33J.pdf Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
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G2R120MT33J G2R120MT33J GeneSiC Semiconductor sic-mosfet-selector-guide.pdf Description: SIC MOSFET N-CH TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
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G3R350MT12J G3R350MT12J GeneSiC Semiconductor G3R350MT12J.pdf Description: SIC MOSFET N-CH 11A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Produkt ist nicht verfügbar
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KBPC1502T KBPC1502T GeneSiC Semiconductor kbpc15005t.pdf Description: BRIDGE RECT 1PHASE 200V 15A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC1502W KBPC1502W GeneSiC Semiconductor kbpc15005t.pdf Description: BRIDGE RECT 1P 200V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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G2R1000MT17J G2R1000MT17J GeneSiC Semiconductor G2R1000MT17J.pdf Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
auf Bestellung 11455 Stücke:
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G3R20MT17K G3R20MT17K GeneSiC Semiconductor G3R20MT17K.pdf Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 408 Stücke:
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GA01PNS150-201 GA01PNS150-201 GeneSiC Semiconductor GA01PNS150-201.pdf Description: SIC DIODE 15000V 1A DO-201
Packaging: Bulk
Package / Case: DO-201AD, Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Supplier Device Package: DO-201
Current - Max: 1 A
Produkt ist nicht verfügbar
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G3R20MT12K G3R20MT12K GeneSiC Semiconductor G3R20MT12K.pdf Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 631 Stücke:
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G3R75MT12K G3R75MT12K GeneSiC Semiconductor G3R75MT12K.pdf Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 1305 Stücke:
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GC05MPS12-252 GC05MPS12-252 GeneSiC Semiconductor GC05MPS12-252.pdf Description: DIODE SIL CARB 1200V 27A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
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GC05MPS12-252 GC05MPS12-252 GeneSiC Semiconductor GC05MPS12-252.pdf Description: DIODE SIL CARB 1200V 27A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
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GC08MPS12-252 GC08MPS12-252 GeneSiC Semiconductor GC08MPS12-252.pdf Description: DIODE SIL CARB 1200V 40A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Produkt ist nicht verfügbar
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G3R40MT12K G3R40MT12K GeneSiC Semiconductor G3R40MT12K.pdf Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1497 Stücke:
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1+26.68 EUR
10+24.37 EUR
25+23.51 EUR
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G3R30MT12K G3R30MT12K GeneSiC Semiconductor G3R30MT12K.pdf Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 1162 Stücke:
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1+34.07 EUR
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100+28.76 EUR
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500+27.11 EUR
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GB50MPS17-247 GB50MPS17-247 GeneSiC Semiconductor GB50MPS17-247.pdf Description: SIC DIODE 1700V 50A TO-247-2
auf Bestellung 380 Stücke:
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GB25MPS17-247 GB25MPS17-247 GeneSiC Semiconductor GB25MPS17-247.pdf Description: DIODE SIL CARB 1700V 52A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2350pF @ 1V, 1MHz
Current - Average Rectified (Io): 52A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Produkt ist nicht verfügbar
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GB05MPS17-263 GB05MPS17-263 GeneSiC Semiconductor GB05MPS17-263.pdf Description: DIODE SIL CARB 1700V 18A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Produkt ist nicht verfügbar
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GD2X75MPS17N GD2X75MPS17N GeneSiC Semiconductor GD2X75MPS17N.pdf Description: DIODE MOD SIC 1700V 115A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
auf Bestellung 124 Stücke:
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GD05MPS17H GD05MPS17H GeneSiC Semiconductor GD05MPS17H.pdf Description: DIODE SIL CARB 1700V 15A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 1197 Stücke:
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GD10MPS17H GD10MPS17H GeneSiC Semiconductor GD10MPS17H.pdf Description: DIODE SIL CARB 1700V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Produkt ist nicht verfügbar
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GD15MPS17H GD15MPS17H GeneSiC Semiconductor GD15MPS17H.pdf Description: DIODE SIL CARB 1700V 36A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1082pF @ 1V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 790 Stücke:
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GD25MPS17H GD25MPS17H GeneSiC Semiconductor GD25MPS17H.pdf Description: DIODE SIL CARB 1700V 56A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 1202 Stücke:
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1+27.02 EUR
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G2R1000MT17D G2R1000MT17D GeneSiC Semiconductor G2R1000MT17D.pdf Description: SIC MOSFET N-CH 4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
Produkt ist nicht verfügbar
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GD02MPS12E GD02MPS12E GeneSiC Semiconductor GD02MPS12E.pdf Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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GD02MPS12E GD02MPS12E GeneSiC Semiconductor GD02MPS12E.pdf Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 2095 Stücke:
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10+1.9 EUR
25+1.8 EUR
100+1.64 EUR
250+1.54 EUR
500+1.48 EUR
1000+1.42 EUR
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GD10MPS12A GD10MPS12A GeneSiC Semiconductor GD10MPS12A.pdf Description: DIODE SIL CARB 1200V 25A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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3+5.88 EUR
10+5.19 EUR
25+4.93 EUR
100+4.57 EUR
250+4.36 EUR
500+4.19 EUR
1000+4.04 EUR
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G3R160MT12J G3R160MT12J GeneSiC Semiconductor G3R160MT12J.pdf Description: SIC MOSFET N-CH 19A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
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2+12.23 EUR
10+10.99 EUR
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100+9.89 EUR
250+9.47 EUR
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GC15MPS12-220 GC15MPS12-220.pdf
GC15MPS12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 82A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Produkt ist nicht verfügbar
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GC20MPS12-220 GC20MPS12-220.pdf
GC20MPS12-220
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 94A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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GC2X20MPS12-247 GC2X20MPS12-247.pdf
GC2X20MPS12-247
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 90A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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GC20MPS12-247 GC20MPS12-247.pdf
GC20MPS12-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 90A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Produkt ist nicht verfügbar
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GB2X50MPS12-227 GB2X50MPS12-227.pdf
GB2X50MPS12-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 93A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 93A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 248 Stücke:
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Anzahl Preis
1+134.53 EUR
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GC50MPS12-247 GC50MPS12-247.pdf
GC50MPS12-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 212A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3263pF @ 1V, 1MHz
Current - Average Rectified (Io): 212A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Produkt ist nicht verfügbar
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GB2X100MPS12-227 GB2X100MPS12-227.pdf
GB2X100MPS12-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 185A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 185A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 2 Stücke:
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Anzahl Preis
1+216.76 EUR
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GB2X50MPS17-227 GB2X50MPS17-227.pdf
GB2X50MPS17-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 50 µA @ 1700 V
auf Bestellung 9 Stücke:
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Anzahl Preis
1+145.08 EUR
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GB05MPS33-263 GB05MPS33-263.pdf
GB05MPS33-263
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 3300V 14A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
auf Bestellung 166 Stücke:
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Anzahl Preis
1+45.74 EUR
10+41.88 EUR
25+40.45 EUR
100+38.35 EUR
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KBJ401G kbj4005g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 4A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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KBPC5001T kbpc50005t.pdf
KBPC5001T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 50A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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KBPC5001W kbpc50005t.pdf
KBPC5001W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GB10MPS17-247 GB10MPS17-247.pdf
GB10MPS17-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 50A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Produkt ist nicht verfügbar
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GC50MPS06-247 GC50MPS06-247.pdf
GC50MPS06-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 29 Stücke:
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Anzahl Preis
1+22.55 EUR
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GC2X50MPS06-227 GC2X50MPS06-227.pdf
GC2X50MPS06-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 104A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 104A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Produkt ist nicht verfügbar
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GC2X100MPS06-227 GC2X100MPS06-227.pdf
GC2X100MPS06-227
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 209A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 209A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
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GE06MPS06E GE06MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GE08MPS06E GE08MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 21A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GE10MPS06E GE10MPS06E.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 26A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GE06MPS06A GE06MPS06A.pdf
GE06MPS06A
Hersteller: GeneSiC Semiconductor
Description: 650V 6A TO-220-2 SIC SCHOTTKY MP
auf Bestellung 3294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
10+3.62 EUR
25+3.43 EUR
100+3.15 EUR
250+2.99 EUR
500+2.97 EUR
Mindestbestellmenge: 5
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GE08MPS06A GE08MPS06A.pdf
GE08MPS06A
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 3 Stücke:
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GE10MPS06A GE10MPS06A.pdf
GE10MPS06A
Hersteller: GeneSiC Semiconductor
Description: 650V 10A TO-220-2 SIC SCHOTTKY M
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.81 EUR
10+5.12 EUR
25+4.86 EUR
100+4.51 EUR
250+4.28 EUR
500+4.12 EUR
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GE2X8MPS06D GE2X8MPS06D.pdf
GE2X8MPS06D
Hersteller: GeneSiC Semiconductor
Description: 650V 16A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 19A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.13 EUR
10+8.13 EUR
25+7.76 EUR
Mindestbestellmenge: 2
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GE2X10MPS06D GE2X10MPS06D.pdf
GE2X10MPS06D
Hersteller: GeneSiC Semiconductor
Description: 650V 20A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GD30MPS06H GD30MPS06H.pdf
GD30MPS06H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 49A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.4 EUR
10+9.29 EUR
25+8.88 EUR
100+8.38 EUR
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GD30MPS06J GD30MPS06J.pdf
GD30MPS06J
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 51A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
auf Bestellung 733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.3 EUR
10+10.12 EUR
25+9.69 EUR
100+9.19 EUR
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GD2X30MPS06N GD2X30MPS06N.pdf
GD2X30MPS06N
Hersteller: GeneSiC Semiconductor
Description: 650V 60A SOT-227 SIC SCHOTTKY MP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 42A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Produkt ist nicht verfügbar
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GB05MPS17-247 GB05MPS17-247.pdf
GB05MPS17-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Produkt ist nicht verfügbar
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G3R350MT12D G3R350MT12D.pdf
G3R350MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
auf Bestellung 7229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.11 EUR
10+6.31 EUR
25+6.01 EUR
100+5.6 EUR
250+5.34 EUR
500+5.16 EUR
1000+4.97 EUR
2500+4.74 EUR
Mindestbestellmenge: 3
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G3R160MT12D G3R160MT12D.pdf
G3R160MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.79 EUR
10+8.78 EUR
25+8.4 EUR
100+7.86 EUR
250+7.53 EUR
500+7.28 EUR
1000+7.05 EUR
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G3R75MT12D G3R75MT12D.pdf
G3R75MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.75 EUR
10+14.19 EUR
25+13.61 EUR
100+12.78 EUR
250+12.26 EUR
500+11.88 EUR
1000+11.51 EUR
Mindestbestellmenge: 2
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G3R40MT12D G3R40MT12D.pdf
G3R40MT12D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.14 EUR
10+23.85 EUR
25+23 EUR
100+21.78 EUR
250+21 EUR
500+20.43 EUR
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G2R1000MT33J G2R1000MT33J.pdf
G2R1000MT33J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.57 EUR
10+27.65 EUR
25+26.55 EUR
100+24.98 EUR
250+24 EUR
500+23.28 EUR
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G2R120MT33J sic-mosfet-selector-guide.pdf
G2R120MT33J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+179.96 EUR
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G3R350MT12J G3R350MT12J.pdf
G3R350MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Produkt ist nicht verfügbar
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KBPC1502T kbpc15005t.pdf
KBPC1502T
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 15A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC1502W kbpc15005t.pdf
KBPC1502W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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G2R1000MT17J G2R1000MT17J.pdf
G2R1000MT17J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
auf Bestellung 11455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.54 EUR
10+9.44 EUR
25+9.03 EUR
100+8.46 EUR
250+8.1 EUR
500+7.84 EUR
1000+7.57 EUR
Mindestbestellmenge: 2
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G3R20MT17K G3R20MT17K.pdf
G3R20MT17K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+161.74 EUR
10+150.04 EUR
25+145.62 EUR
100+139.18 EUR
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GA01PNS150-201 GA01PNS150-201.pdf
GA01PNS150-201
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 15000V 1A DO-201
Packaging: Bulk
Package / Case: DO-201AD, Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Supplier Device Package: DO-201
Current - Max: 1 A
Produkt ist nicht verfügbar
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G3R20MT12K G3R20MT12K.pdf
G3R20MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.49 EUR
10+50.09 EUR
25+48.46 EUR
100+46.06 EUR
250+44.55 EUR
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G3R75MT12K G3R75MT12K.pdf
G3R75MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 1305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.26 EUR
10+14.66 EUR
25+14.06 EUR
100+13.21 EUR
250+12.67 EUR
500+12.29 EUR
1000+11.91 EUR
Mindestbestellmenge: 2
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GC05MPS12-252 GC05MPS12-252.pdf
GC05MPS12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 27A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
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GC05MPS12-252 GC05MPS12-252.pdf
GC05MPS12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 27A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Produkt ist nicht verfügbar
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GC08MPS12-252 GC08MPS12-252.pdf
GC08MPS12-252
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 40A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Produkt ist nicht verfügbar
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G3R40MT12K G3R40MT12K.pdf
G3R40MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.68 EUR
10+24.37 EUR
25+23.51 EUR
100+22.25 EUR
250+21.47 EUR
500+20.89 EUR
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G3R30MT12K G3R30MT12K.pdf
G3R30MT12K
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 1162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.07 EUR
10+31.3 EUR
25+30.27 EUR
100+28.76 EUR
250+27.81 EUR
500+27.11 EUR
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GB50MPS17-247 GB50MPS17-247.pdf
GB50MPS17-247
Hersteller: GeneSiC Semiconductor
Description: SIC DIODE 1700V 50A TO-247-2
auf Bestellung 380 Stücke:
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GB25MPS17-247 GB25MPS17-247.pdf
GB25MPS17-247
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 52A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2350pF @ 1V, 1MHz
Current - Average Rectified (Io): 52A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Produkt ist nicht verfügbar
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GB05MPS17-263 GB05MPS17-263.pdf
GB05MPS17-263
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 18A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Produkt ist nicht verfügbar
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GD2X75MPS17N GD2X75MPS17N.pdf
GD2X75MPS17N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 115A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
auf Bestellung 124 Stücke:
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Anzahl Preis
1+163.96 EUR
10+152.16 EUR
25+147.71 EUR
100+141.21 EUR
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GD05MPS17H GD05MPS17H.pdf
GD05MPS17H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 1197 Stücke:
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Anzahl Preis
3+7.94 EUR
10+7.06 EUR
25+6.75 EUR
100+6.3 EUR
250+6.02 EUR
500+5.81 EUR
1000+5.61 EUR
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GD10MPS17H GD10MPS17H.pdf
GD10MPS17H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Produkt ist nicht verfügbar
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GD15MPS17H GD15MPS17H.pdf
GD15MPS17H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 36A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1082pF @ 1V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 790 Stücke:
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Anzahl Preis
2+16.7 EUR
10+15.06 EUR
25+14.46 EUR
100+13.59 EUR
250+13.04 EUR
500+12.65 EUR
Mindestbestellmenge: 2
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GD25MPS17H GD25MPS17H.pdf
GD25MPS17H
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 56A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 1202 Stücke:
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Anzahl Preis
1+27.02 EUR
10+24.39 EUR
25+23.42 EUR
100+22.02 EUR
250+21.14 EUR
500+20.51 EUR
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G2R1000MT17D G2R1000MT17D.pdf
G2R1000MT17D
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
Produkt ist nicht verfügbar
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GD02MPS12E GD02MPS12E.pdf
GD02MPS12E
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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GD02MPS12E GD02MPS12E.pdf
GD02MPS12E
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 2095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
10+1.9 EUR
25+1.8 EUR
100+1.64 EUR
250+1.54 EUR
500+1.48 EUR
1000+1.42 EUR
Mindestbestellmenge: 9
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GD10MPS12A GD10MPS12A.pdf
GD10MPS12A
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 25A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 1280 Stücke:
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Anzahl Preis
3+5.88 EUR
10+5.19 EUR
25+4.93 EUR
100+4.57 EUR
250+4.36 EUR
500+4.19 EUR
1000+4.04 EUR
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G3R160MT12J G3R160MT12J.pdf
G3R160MT12J
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 19A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.23 EUR
10+10.99 EUR
25+10.53 EUR
100+9.89 EUR
250+9.47 EUR
Mindestbestellmenge: 2
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