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MURTA20040 MURTA20040 GeneSiC Semiconductor murta20020.pdf Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA20040R MURTA20040R GeneSiC Semiconductor murta20020.pdf Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA20060 MURTA20060 GeneSiC Semiconductor murta200120.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA20060R MURTA20060R GeneSiC Semiconductor murta200120.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA300120 MURTA300120 GeneSiC Semiconductor murta300120.pdf Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA300120R MURTA300120R GeneSiC Semiconductor murta300120.pdf Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA30020 MURTA30020 GeneSiC Semiconductor murta30020.pdf Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MURTA30020R MURTA30020R GeneSiC Semiconductor murta30020.pdf Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MURTA30040 MURTA30040 GeneSiC Semiconductor murta30020.pdf Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA30040R MURTA30040R GeneSiC Semiconductor murta30020.pdf Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA30060 MURTA30060 GeneSiC Semiconductor murta300120.pdf Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA30060R MURTA30060R GeneSiC Semiconductor murta300120.pdf Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA400120 MURTA400120 GeneSiC Semiconductor murta400120.pdf Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MURTA400120R MURTA400120R GeneSiC Semiconductor murta400120.pdf Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MURTA40020 MURTA40020 GeneSiC Semiconductor murta40020.pdf Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MURTA40020R MURTA40020R GeneSiC Semiconductor murta40020.pdf Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MURTA40040 MURTA40040 GeneSiC Semiconductor murta40020.pdf Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA40040R MURTA40040R GeneSiC Semiconductor murta40020.pdf Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA40060 MURTA40060 GeneSiC Semiconductor murta400120.pdf Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA40060R MURTA40060R GeneSiC Semiconductor murta400120.pdf Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA500120 MURTA500120 GeneSiC Semiconductor murta500120.pdf Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MURTA500120R MURTA500120R GeneSiC Semiconductor murta500120.pdf Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MURTA600120 MURTA600120 GeneSiC Semiconductor murta60060.pdf Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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MURTA600120R MURTA600120R GeneSiC Semiconductor murta60060.pdf Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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SD41 SD41 GeneSiC Semiconductor sd41_thru_sd4145r.pdf Description: DIODE SCHOTTKY 35V 30A DO4
Produkt ist nicht verfügbar
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SD4145 SD4145 GeneSiC Semiconductor sd41.pdf Description: DIODE SCHOTTKY 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
Produkt ist nicht verfügbar
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SD4145R SD4145R GeneSiC Semiconductor sd41.pdf Description: DIODE SCHOTTKY REV 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
Produkt ist nicht verfügbar
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SD41R SD41R GeneSiC Semiconductor sd41_thru_sd4145r.pdf Description: DIODE SCHOTTKY 35V 30A DO4
Produkt ist nicht verfügbar
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GA100JT12-227 GA100JT12-227 GeneSiC Semiconductor GA100JT12-227.pdf Description: TRANS SJT 1200V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Produkt ist nicht verfügbar
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GA20SICP12-247 GA20SICP12-247 GeneSiC Semiconductor GA20SICP12-247.pdf Description: TRANS SJT 1200V 45A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Produkt ist nicht verfügbar
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GA50JT12-263 GA50JT12-263 GeneSiC Semiconductor Description: TRANSISTOR 1200V 100A TO263-7
Produkt ist nicht verfügbar
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GA10SICP12-263 GA10SICP12-263 GeneSiC Semiconductor GA10SICP12-263.pdf Description: TRANS SJT 1200V 25A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Produkt ist nicht verfügbar
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GA100JT17-227 GA100JT17-227 GeneSiC Semiconductor GA100JT17-227.pdf Description: TRANS SJT 1700V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Produkt ist nicht verfügbar
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GB10SLT12-247D GB10SLT12-247D GeneSiC Semiconductor Description: DIODE ARRAY SIC 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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GB20SLT12-247D GB20SLT12-247D GeneSiC Semiconductor Description: DIODE SCHOTTKY 1.2KV 25A TO247D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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MBRT40045DL MBRT40045DL GeneSiC Semiconductor Description: DIODE SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURH7020 MURH7020 GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURH7020R MURH7020R GeneSiC Semiconductor murh7005.pdf Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UFT14020 UFT14020 GeneSiC Semiconductor uft14005_thru_uft14060.pdf Description: DIODE GEN PURP 200V 70A TO249AB
Produkt ist nicht verfügbar
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FST63100M FST63100M GeneSiC Semiconductor fst6340m_thru_fst63100m.pdf Description: DIODE SCHOTTKY 100V 30A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST6310M FST6310M GeneSiC Semiconductor fst6310m_thru_fst6335m.pdf Description: DIODE SCHOTTKY 10V 30A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST6315M FST6315M GeneSiC Semiconductor fst6310m_thru_fst6335m.pdf Description: DIODE SCHOTTKY 15V 30A D61-3M
Produkt ist nicht verfügbar
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FST6320M FST6320M GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 30A D61-3M
Produkt ist nicht verfügbar
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FST6330M FST6330M GeneSiC Semiconductor fst6310m_thru_fst6335m.pdf Description: DIODE SCHOTTKY 30V 30A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST6335M FST6335M GeneSiC Semiconductor fst6310m_thru_fst6335m.pdf Description: DIODE SCHOTTKY 35V 30A D61-3M
Produkt ist nicht verfügbar
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FST6340M FST6340M GeneSiC Semiconductor fst6340m_thru_fst63100m.pdf Description: DIODE SCHOTTKY 40V 30A D61-3M
Produkt ist nicht verfügbar
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FST6345M FST6345M GeneSiC Semiconductor fst6340m_thru_fst63100m.pdf Description: DIODE SCHOTTKY 45V 30A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST6360M FST6360M GeneSiC Semiconductor fst6340m_thru_fst63100m.pdf Description: DIODE SCHOTTKY 60V 30A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST6380M FST6380M GeneSiC Semiconductor fst6340m_thru_fst63100m.pdf Description: DIODE SCHOTTKY 80V 30A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST73100M FST73100M GeneSiC Semiconductor fst7345m_thru_fst73100m.pdf Description: DIODE SCHOTTKY 100V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7320M FST7320M GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7330M FST7330M GeneSiC Semiconductor fst7320m_thru_fst7340m.pdf Description: DIODE SCHOTTKY 30V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7335M FST7335M GeneSiC Semiconductor Description: DIODE MOD SCHOTT 35V 35A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7340M FST7340M GeneSiC Semiconductor fst7320m_thru_fst7340m.pdf Description: DIODE SCHOTTKY 40V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7345M FST7345M GeneSiC Semiconductor fst7345m_thru_fst73100m.pdf Description: DIODE SCHOTTKY 45V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7360M FST7360M GeneSiC Semiconductor fst7345m_thru_fst73100m.pdf Description: DIODE SCHOTTKY 60V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FST7380M FST7380M GeneSiC Semiconductor fst7345m_thru_fst73100m.pdf Description: DIODE SCHOTTKY 80V 35A D61-3M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF120100 MBRF120100 GeneSiC Semiconductor mbrf12045_thru_mbrf120100r.pdf Description: DIODE SCHOTTKY 100V 60A TO244AB
Produkt ist nicht verfügbar
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MBRF120100R MBRF120100R GeneSiC Semiconductor mbrf12045_thru_mbrf120100r.pdf Description: DIODE SCHOTTKY 100V 60A TO244AB
Produkt ist nicht verfügbar
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MBRF120150 MBRF120150 GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 60A TO244AB
Produkt ist nicht verfügbar
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MURTA20040 murta20020.pdf
MURTA20040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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MURTA20040R murta20020.pdf
MURTA20040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA20060 murta200120.pdf
MURTA20060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA20060R murta200120.pdf
MURTA20060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA300120 murta300120.pdf
MURTA300120
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA300120R murta300120.pdf
MURTA300120R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA30020 murta30020.pdf
MURTA30020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA30020R murta30020.pdf
MURTA30020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA30040 murta30020.pdf
MURTA30040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA30040R murta30020.pdf
MURTA30040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA30060 murta300120.pdf
MURTA30060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA30060R murta300120.pdf
MURTA30060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA400120 murta400120.pdf
MURTA400120
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA400120R murta400120.pdf
MURTA400120R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA40020 murta40020.pdf
MURTA40020
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA40020R murta40020.pdf
MURTA40020R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA40040 murta40020.pdf
MURTA40040
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA40040R murta40020.pdf
MURTA40040R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA40060 murta400120.pdf
MURTA40060
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA40060R murta400120.pdf
MURTA40060R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA500120 murta500120.pdf
MURTA500120
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA500120R murta500120.pdf
MURTA500120R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA600120 murta60060.pdf
MURTA600120
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURTA600120R murta60060.pdf
MURTA600120R
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Produkt ist nicht verfügbar
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SD41 sd41_thru_sd4145r.pdf
SD41
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 30A DO4
Produkt ist nicht verfügbar
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SD4145 sd41.pdf
SD4145
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
Produkt ist nicht verfügbar
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SD4145R sd41.pdf
SD4145R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 35 V
Produkt ist nicht verfügbar
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SD41R sd41_thru_sd4145r.pdf
SD41R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 30A DO4
Produkt ist nicht verfügbar
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GA100JT12-227 GA100JT12-227.pdf
GA100JT12-227
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Produkt ist nicht verfügbar
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GA20SICP12-247 GA20SICP12-247.pdf
GA20SICP12-247
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 45A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
Power Dissipation (Max): 282W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
Produkt ist nicht verfügbar
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GA50JT12-263
GA50JT12-263
Hersteller: GeneSiC Semiconductor
Description: TRANSISTOR 1200V 100A TO263-7
Produkt ist nicht verfügbar
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GA10SICP12-263 GA10SICP12-263.pdf
GA10SICP12-263
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
Power Dissipation (Max): 170W (Tc)
Supplier Device Package: TO-263-7
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
Produkt ist nicht verfügbar
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GA100JT17-227 GA100JT17-227.pdf
GA100JT17-227
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1700V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
Power Dissipation (Max): 535W (Tc)
Supplier Device Package: SOT-227
Part Status: Obsolete
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 800 V
Produkt ist nicht verfügbar
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GB10SLT12-247D
GB10SLT12-247D
Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY SIC 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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GB20SLT12-247D
GB20SLT12-247D
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 25A TO247D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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MBRT40045DL
MBRT40045DL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTT 45V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Produkt ist nicht verfügbar
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MURH7020 murh7005.pdf
MURH7020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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MURH7020R murh7005.pdf
MURH7020R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
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UFT14020 uft14005_thru_uft14060.pdf
UFT14020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A TO249AB
Produkt ist nicht verfügbar
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FST63100M fst6340m_thru_fst63100m.pdf
FST63100M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 30A D61-3M
Produkt ist nicht verfügbar
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FST6310M fst6310m_thru_fst6335m.pdf
FST6310M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 10V 30A D61-3M
Produkt ist nicht verfügbar
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FST6315M fst6310m_thru_fst6335m.pdf
FST6315M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 15V 30A D61-3M
Produkt ist nicht verfügbar
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FST6320M
FST6320M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 30A D61-3M
Produkt ist nicht verfügbar
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FST6330M fst6310m_thru_fst6335m.pdf
FST6330M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 30A D61-3M
Produkt ist nicht verfügbar
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FST6335M fst6310m_thru_fst6335m.pdf
FST6335M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 30A D61-3M
Produkt ist nicht verfügbar
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FST6340M fst6340m_thru_fst63100m.pdf
FST6340M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 30A D61-3M
Produkt ist nicht verfügbar
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FST6345M fst6340m_thru_fst63100m.pdf
FST6345M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 30A D61-3M
Produkt ist nicht verfügbar
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FST6360M fst6340m_thru_fst63100m.pdf
FST6360M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 30A D61-3M
Produkt ist nicht verfügbar
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FST6380M fst6340m_thru_fst63100m.pdf
FST6380M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 30A D61-3M
Produkt ist nicht verfügbar
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FST73100M fst7345m_thru_fst73100m.pdf
FST73100M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 35A D61-3M
Produkt ist nicht verfügbar
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FST7320M
FST7320M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 35A D61-3M
Produkt ist nicht verfügbar
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FST7330M fst7320m_thru_fst7340m.pdf
FST7330M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 35A D61-3M
Produkt ist nicht verfügbar
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FST7335M
FST7335M
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 35A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
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FST7340M fst7320m_thru_fst7340m.pdf
FST7340M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 35A D61-3M
Produkt ist nicht verfügbar
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FST7345M fst7345m_thru_fst73100m.pdf
FST7345M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 35A D61-3M
Produkt ist nicht verfügbar
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FST7360M fst7345m_thru_fst73100m.pdf
FST7360M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 35A D61-3M
Produkt ist nicht verfügbar
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FST7380M fst7345m_thru_fst73100m.pdf
FST7380M
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 35A D61-3M
Produkt ist nicht verfügbar
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MBRF120100 mbrf12045_thru_mbrf120100r.pdf
MBRF120100
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A TO244AB
Produkt ist nicht verfügbar
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MBRF120100R mbrf12045_thru_mbrf120100r.pdf
MBRF120100R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A TO244AB
Produkt ist nicht verfügbar
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MBRF120150
MBRF120150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 60A TO244AB
Produkt ist nicht verfügbar
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