Technische Details GC2X100MPS06-227 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 209A SOT227, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 209A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GC2X100MPS06-227
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GC2X100MPS06-227 | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 650V 209A SOT227Current - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 209A (DC) Diode Configuration: 2 Independent Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
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GC2X100MPS06-227 | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Diode modulesDescription: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw Technology: SiC Max. off-state voltage: 650V Load current: 100A x2 Semiconductor structure: double independent Features of semiconductor devices: MPS Case: SOT227B Max. forward voltage: 1.5V Max. load current: 200A Max. forward impulse current: 0.64kA Kind of package: tube Reverse recovery time: 10ns Type of semiconductor module: diode Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |


