GC2X100MPS06-227 GeneSiC Semiconductor
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Technische Details GC2X100MPS06-227 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 209A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 209A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote GC2X100MPS06-227
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GC2X100MPS06-227 | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide Schottky Diode |
Produkt ist nicht verfügbar |
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GC2X100MPS06-227 | Hersteller : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 650V 209A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 209A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
Produkt ist nicht verfügbar |