GC2X10MPS12-247 GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. forward impulse current: 80A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Technology: SiC
Type of diode: Schottky rectifying
Max. load current: 20A
Features of semiconductor devices: MPS
Mounting: THT
Semiconductor structure: common cathode; double
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Technische Details GC2X10MPS12-247 GeneSiC SEMICONDUCTOR
Description: DIODE ARR SIC 1200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 50A (DC), Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote GC2X10MPS12-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GC2X10MPS12-247 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 20A TO-247-3 |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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GC2X10MPS12-247 | Hersteller : GeneSiC Semiconductor |
Description: DIODE ARR SIC 1200V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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