GC50MPS06-247 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 50A TO247-2
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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Technische Details GC50MPS06-247 GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 50A TO247-2, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 50A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote GC50MPS06-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GC50MPS06-247 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 50A TO-247-2 SiC Schottky MPS |
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