GC2X20MPS12-247 GeneSiC Semiconductor
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Technische Details GC2X20MPS12-247 GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 90A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 90A (DC), Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 18 µA @ 1200 V.
Weitere Produktangebote GC2X20MPS12-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GC2X20MPS12-247 | Hersteller : GeneSiC Semiconductor |
 Rectifier Diode Schottky SiC 1.2KV 180A 3-Pin(3+Tab) TO-247 |
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GC2X20MPS12-247 | Hersteller : GeneSiC Semiconductor |
Description: DIODE ARR SIC 1200V 90A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 90A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
Produkt ist nicht verfügbar |