GC15MPS12-247 GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Max. off-state voltage: 1.2kV
Load current: 15A
Max. forward impulse current: 120A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.5V
Technology: SiC
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Mounting: THT
Semiconductor structure: single diode
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Technische Details GC15MPS12-247 GeneSiC SEMICONDUCTOR
Description: DIODE SIL CARB 1200V 75A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1089pF @ 1V, 1MHz, Current - Average Rectified (Io): 75A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A, Current - Reverse Leakage @ Vr: 14 µA @ 1200 V.
Weitere Produktangebote GC15MPS12-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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GC15MPS12-247 | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 1200V 15A TO-247-2 SiC Schottky MPS |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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GC15MPS12-247 | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 75A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1089pF @ 1V, 1MHz Current - Average Rectified (Io): 75A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 14 µA @ 1200 V |
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