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GBU10B GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 7485 Stücke:
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7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
500+1.08 EUR
1000+0.97 EUR
2500+0.85 EUR
Mindestbestellmenge: 7
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MSRTA400120A MSRTA400120A GeneSiC Semiconductor MSRTA400120%28A%29%7EMSRTA400160%28A%29.pdf Description: DIODE MOD GP 1200V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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GD2X25MPS17N GD2X25MPS17N GeneSiC Semiconductor GD2X25MPS17N.pdf Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 92 Stücke:
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1+75.77 EUR
10+69.63 EUR
25+67.34 EUR
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GD2X150MPS06N GD2X150MPS06N GeneSiC Semiconductor GD2X150MPS06N.pdf Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 325 Stücke:
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10+89.35 EUR
25+86.6 EUR
100+82.59 EUR
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GBU8D GBU8D GeneSiC Semiconductor gbu8a.pdf Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4839 Stücke:
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8+2.38 EUR
11+1.67 EUR
25+1.45 EUR
100+1.17 EUR
250+1.02 EUR
500+0.92 EUR
1000+0.83 EUR
2500+0.72 EUR
Mindestbestellmenge: 8
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1N3892 1N3892 GeneSiC Semiconductor 1n3889.pdf Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 88 Stücke:
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2+15.66 EUR
10+12.72 EUR
25+11.71 EUR
Mindestbestellmenge: 2
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MBR6045 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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1N1183A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ25J GeneSiC Semiconductor gbj25m.pdf Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBJ25G GeneSiC Semiconductor gbj25g.pdf Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ25D GeneSiC Semiconductor gbj25g.pdf Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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GBJ25M GeneSiC Semiconductor gbj25m.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ25B GeneSiC Semiconductor gbj25g.pdf Description: 100V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N2133A GeneSiC Semiconductor 1n2133a.pdf Description: DIODE GEN PURP 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MUR5010 MUR5010 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MUR5020 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ15K GeneSiC Semiconductor gbj15k.pdf Description: 800V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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1N1206A 1N1206A GeneSiC Semiconductor s12m.pdf Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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1N1184R 1N1184R GeneSiC Semiconductor 1n1183.pdf Description: DIODE STANDARD REV 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ15D GeneSiC Semiconductor gbj15b.pdf Description: 200V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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GBJ15G GeneSiC Semiconductor gbj15b.pdf Description: 400V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ15B GeneSiC Semiconductor gbj15b.pdf Description: 100V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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GBJ15J GeneSiC Semiconductor gbj15k.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N3671A GeneSiC Semiconductor 1n3671a.pdf Description: DIODE GEN PURP 800V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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DB157G GeneSiC Semiconductor db155g.pdf description Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT20060A MSRT20060A GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT20060AD MSRT20060AD GeneSiC Semiconductor Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBU10K GeneSiC Semiconductor gbu10j.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.75 EUR
10+1.95 EUR
25+1.7 EUR
100+1.38 EUR
Mindestbestellmenge: 7
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GBPC5010W GBPC5010W GeneSiC Semiconductor gbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2506W KBPC2506W GeneSiC Semiconductor kbpc2506t.pdf Description: BRIDGE RECT 1P 600V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC5010W KBPC5010W GeneSiC Semiconductor kbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ10M GeneSiC Semiconductor gbj10j.pdf Description: 1000V 10A GBJ SINGLE PHASE BRIDG
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3502W KBPC3502W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 200V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC35005W KBPC35005W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 50V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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KBPC3501W KBPC3501W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 100V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC3504W KBPC3504W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 400V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 247 Stücke:
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3+6.21 EUR
10+4.94 EUR
25+4.51 EUR
100+3.92 EUR
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KBPC3506W KBPC3506W GeneSiC Semiconductor kbpc3506t.pdf Description: BRIDGE RECT 1P 600V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC3508W KBPC3508W GeneSiC Semiconductor kbpc3506t.pdf Description: BRIDGE RECT 1P 800V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5008W KBPC5008W GeneSiC Semiconductor kbpc5006t.pdf Description: BRIDGE RECT 1P 800V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BR810 BR810 GeneSiC Semiconductor br86.pdf Description: BRIDGE RECT 1PHASE 1KV 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU1010 GeneSiC Semiconductor kbu1006.pdf Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC2508W KBPC2508W GeneSiC Semiconductor kbpc2506t.pdf Description: BRIDGE RECT 1P 800V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBU4G GBU4G GeneSiC Semiconductor gbu4a.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1711 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
12+1.55 EUR
25+1.35 EUR
100+1.09 EUR
250+0.95 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
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MBR6035 GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU10A GBU10A GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 50V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
Mindestbestellmenge: 7
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GBU10G GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 400V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
500+1.08 EUR
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GBU10J GeneSiC Semiconductor gbu10j.pdf Description: BRIDGE 1-PH GBU 600V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
1N1189 GeneSiC Semiconductor 1n1188.pdf Description: DIODE GEN PURP 600V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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1N1184AR 1N1184AR GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP REV 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MSRT150100A MSRT150100A GeneSiC Semiconductor Description: DIODE MODULE 1KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRT150120A MSRT150120A GeneSiC Semiconductor Description: DIODE MODULE 1.2KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150140A MSRT150140A GeneSiC Semiconductor Description: DIODE MODULE 1.4KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150160A MSRT150160A GeneSiC Semiconductor Description: DIODE MODULE 1.6KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15060A MSRT15060A GeneSiC Semiconductor Description: DIODE MODULE 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15080A MSRT15080A GeneSiC Semiconductor Description: DIODE MODULE 800V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150100AD MSRT150100AD GeneSiC Semiconductor Description: DIODE GEN 1KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT150120AD MSRT150120AD GeneSiC Semiconductor Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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MSRT150140AD MSRT150140AD GeneSiC Semiconductor Description: DIODE GEN 1.4KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT150160AD MSRT150160AD GeneSiC Semiconductor Description: DIODE GEN 1.6KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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MSRT15060AD MSRT15060AD GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBU10B gbu10a.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 7485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
500+1.08 EUR
1000+0.97 EUR
2500+0.85 EUR
Mindestbestellmenge: 7
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MSRTA400120A MSRTA400120%28A%29%7EMSRTA400160%28A%29.pdf
MSRTA400120A
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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GD2X25MPS17N GD2X25MPS17N.pdf
GD2X25MPS17N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 92 Stücke:
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Anzahl Preis
1+75.77 EUR
10+69.63 EUR
25+67.34 EUR
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GD2X150MPS06N GD2X150MPS06N.pdf
GD2X150MPS06N
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 325 Stücke:
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Anzahl Preis
1+96.68 EUR
10+89.35 EUR
25+86.6 EUR
100+82.59 EUR
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GBU8D gbu8a.pdf
GBU8D
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
11+1.67 EUR
25+1.45 EUR
100+1.17 EUR
250+1.02 EUR
500+0.92 EUR
1000+0.83 EUR
2500+0.72 EUR
Mindestbestellmenge: 8
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1N3892 1n3889.pdf
1N3892
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.66 EUR
10+12.72 EUR
25+11.71 EUR
Mindestbestellmenge: 2
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MBR6045 mbr60100.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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1N1183A 1n1183a.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ25J gbj25m.pdf
Hersteller: GeneSiC Semiconductor
Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBJ25G gbj25g.pdf
Hersteller: GeneSiC Semiconductor
Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ25D gbj25g.pdf
Hersteller: GeneSiC Semiconductor
Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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GBJ25M gbj25m.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ25B gbj25g.pdf
Hersteller: GeneSiC Semiconductor
Description: 100V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N2133A 1n2133a.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MUR5010 mur5005.pdf
MUR5010
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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MUR5020 mur5005.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ15K gbj15k.pdf
Hersteller: GeneSiC Semiconductor
Description: 800V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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1N1206A s12m.pdf
1N1206A
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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1N1184R 1n1183.pdf
1N1184R
Hersteller: GeneSiC Semiconductor
Description: DIODE STANDARD REV 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ15D gbj15b.pdf
Hersteller: GeneSiC Semiconductor
Description: 200V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ15G gbj15b.pdf
Hersteller: GeneSiC Semiconductor
Description: 400V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ15B gbj15b.pdf
Hersteller: GeneSiC Semiconductor
Description: 100V 15A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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GBJ15J gbj15k.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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1N3671A 1n3671a.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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DB157G description db155g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT20060A MSRT20060%7E200100%28A%29.pdf
MSRT20060A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSRT20060AD
MSRT20060AD
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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GBU10K gbu10j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+1.95 EUR
25+1.7 EUR
100+1.38 EUR
Mindestbestellmenge: 7
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GBPC5010W gbpc5006t.pdf
GBPC5010W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2506W kbpc2506t.pdf
KBPC2506W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC5010W kbpc5006t.pdf
KBPC5010W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ10M gbj10j.pdf
Hersteller: GeneSiC Semiconductor
Description: 1000V 10A GBJ SINGLE PHASE BRIDG
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3502W kbpc35005t.pdf
KBPC3502W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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KBPC35005W kbpc35005t.pdf
KBPC35005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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KBPC3501W kbpc35005t.pdf
KBPC3501W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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KBPC3504W kbpc35005t.pdf
KBPC3504W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.94 EUR
25+4.51 EUR
100+3.92 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
KBPC3506W kbpc3506t.pdf
KBPC3506W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC3508W kbpc3506t.pdf
KBPC3508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBPC5008W kbpc5006t.pdf
KBPC5008W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BR810 br86.pdf
BR810
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBU1010 kbu1006.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2508W kbpc2506t.pdf
KBPC2508W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBU4G gbu4a.pdf
GBU4G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
12+1.55 EUR
25+1.35 EUR
100+1.09 EUR
250+0.95 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
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MBR6035 mbr6020.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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GBU10A gbu10a.pdf
GBU10A
Hersteller: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 50V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
Mindestbestellmenge: 7
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GBU10G gbu10a.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 400V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
500+1.08 EUR
Mindestbestellmenge: 7
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GBU10J gbu10j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 600V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.93 EUR
25+1.69 EUR
100+1.37 EUR
250+1.2 EUR
Mindestbestellmenge: 7
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1N1189 1n1188.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N1184AR 1n1183a.pdf
1N1184AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MSRT150100A
MSRT150100A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150120A
MSRT150120A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150140A
MSRT150140A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.4KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT150160A
MSRT150160A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 1.6KV 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15060A
MSRT15060A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT15080A
MSRT15080A
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 800V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRT150100AD
MSRT150100AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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MSRT150120AD
MSRT150120AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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MSRT150140AD
MSRT150140AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Produkt ist nicht verfügbar
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MSRT150160AD
MSRT150160AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Produkt ist nicht verfügbar
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MSRT15060AD
MSRT15060AD
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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