GE10MPS06A GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 4+ | 5.81 EUR |
| 10+ | 5.12 EUR |
| 25+ | 4.86 EUR |
| 100+ | 4.51 EUR |
| 250+ | 4.28 EUR |
| 500+ | 4.12 EUR |
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Technische Details GE10MPS06A GeneSiC Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Features of semiconductor devices: MPS, Case: TO220-2, Max. forward voltage: 1.25V, Max. forward impulse current: 44A, Kind of package: tube.
Weitere Produktangebote GE10MPS06A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GE10MPS06A | Hersteller : GeneSiC Semiconductor |
 SiC Schottky Diodes 650V 10A TO-220-2 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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GE10MPS06A | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 44A Kind of package: tube |
Produkt ist nicht verfügbar |