GD60MPS06H GeneSiC Semiconductor

Description: DIODE SIL CARB 650V 82A TO247-2, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 82A, Capacitance @ Vr, F: 1463pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.