GD60MPS06H GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.41 EUR |
| 10+ | 15.65 EUR |
| 25+ | 15.01 EUR |
| 100+ | 14.1 EUR |
| 250+ | 13.51 EUR |
| 500+ | 13.09 EUR |
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Technische Details GD60MPS06H GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 82A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1463pF @ 1V, 1MHz, Current - Average Rectified (Io): 82A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Current - Reverse Leakage @ Vr: 10 µA @ 650 V.
Weitere Produktangebote GD60MPS06H nach Preis ab 14.59 EUR bis 18.8 EUR
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GD60MPS06H | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 60A TO-247-2 SiC Schottky MPS |
auf Bestellung 1632 Stücke: Lieferzeit 10-14 Tag (e) |
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