GD30MPS06A GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 8.52 EUR |
| 10+ | 7.57 EUR |
| 25+ | 7.22 EUR |
| 100+ | 6.74 EUR |
| 250+ | 6.42 EUR |
| 500+ | 6.2 EUR |
| 1000+ | 5.98 EUR |
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Technische Details GD30MPS06A GeneSiC Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 33A, Semiconductor structure: single diode, Features of semiconductor devices: MPS, Case: TO220-2, Max. forward voltage: 1.8V, Max. load current: 86A, Max. forward impulse current: 0.168kA, Kind of package: tube.
Weitere Produktangebote GD30MPS06A nach Preis ab 6.06 EUR bis 8.61 EUR
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GD30MPS06A | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 650V 30A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V |
auf Bestellung 1744 Stücke: Lieferzeit 10-14 Tag (e) |
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GD30MPS06A | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 33A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 33A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Max. forward voltage: 1.8V Max. load current: 86A Max. forward impulse current: 0.168kA Kind of package: tube |
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