GD30MPS12H GeneSiC Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.67 EUR |
| 10+ | 15.33 EUR |
| 30+ | 14.36 EUR |
| 120+ | 13.76 EUR |
| 270+ | 13.57 EUR |
| 510+ | 13.14 EUR |
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Technische Details GD30MPS12H GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 55A, Capacitance @ Vr, F: 1101pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote GD30MPS12H nach Preis ab 14.71 EUR bis 18.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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GD30MPS12H | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1200V 55A TO2472Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 55A Capacitance @ Vr, F: 1101pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
auf Bestellung 155 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD30MPS12H |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 55A
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1200V 55A TO2472
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 55A
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.2 EUR |
| 10+ | 16.35 EUR |
| 25+ | 15.67 EUR |
| 100+ | 14.71 EUR |