GD30MPS12H GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.29 EUR |
| 10+ | 13.74 EUR |
| 25+ | 13.17 EUR |
| 100+ | 12.36 EUR |
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Technische Details GD30MPS12H GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1101pF @ 1V, 1MHz, Current - Average Rectified (Io): 55A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V.
Weitere Produktangebote GD30MPS12H nach Preis ab 11.92 EUR bis 16.17 EUR
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GD30MPS12H | Hersteller : GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 30A TO-247-2 SiC Schottky MPS |
auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
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