GD30MPS12H GeneSiC Semiconductor
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.85 EUR |
| 10+ | 12.88 EUR |
| 30+ | 12.07 EUR |
| 120+ | 11.56 EUR |
| 270+ | 11.4 EUR |
| 510+ | 11.04 EUR |
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Technische Details GD30MPS12H GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1101pF @ 1V, 1MHz, Current - Average Rectified (Io): 55A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V.
Weitere Produktangebote GD30MPS12H nach Preis ab 12.36 EUR bis 15.29 EUR
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GD30MPS12H | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1200V 55A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1101pF @ 1V, 1MHz Current - Average Rectified (Io): 55A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
auf Bestellung 155 Stücke: Lieferzeit 10-14 Tag (e) |
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