GE08MPS06A GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 15A TO220-2
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details GE08MPS06A GeneSiC Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 8A, Semiconductor structure: single diode, Features of semiconductor devices: MPS, Case: TO220-2, Max. forward voltage: 1.25V, Max. forward impulse current: 36A, Kind of package: tube.
Weitere Produktangebote GE08MPS06A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GE08MPS06A | Hersteller : GeneSiC Semiconductor |
SiC Schottky Diodes 650V 8A TO-220-2 SiC Schottky MPS |
Produkt ist nicht verfügbar |
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GE08MPS06A | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 36A Kind of package: tube |
Produkt ist nicht verfügbar |