GE04MPS06E GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: DIODE SIL CARB 650V 11A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 2.52 EUR |
| 25+ | 2.38 EUR |
| 100+ | 2.19 EUR |
| 250+ | 2.07 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.9 EUR |
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Technische Details GE04MPS06E GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 11A TO252-2, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 186pF @ 1V, 1MHz, Current - Average Rectified (Io): 11A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 650 V.
Weitere Produktangebote GE04MPS06E nach Preis ab 1.97 EUR bis 3.01 EUR
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GE04MPS06E | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 4A TO-252-2 SiC Schottky MPS |
auf Bestellung 201 Stücke: Lieferzeit 10-14 Tag (e) |
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