GE04MPS06E GeneSiC Semiconductor

Description: DIODE SIL CARB 650V 11A TO252-2, Current - Reverse Leakage @ Vr: 5 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 11A, Capacitance @ Vr, F: 186pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Cut Tape (CT).