GD30MPS06H GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.71 EUR |
| 12+ | 7.45 EUR |
| 30+ | 7.44 EUR |
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Technische Details GD30MPS06H GeneSiC SEMICONDUCTOR
Description: DIODE SIL CARB 650V 49A TO247-2, Reverse Recovery Time (trr): 0 ns, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 49A, Capacitance @ Vr, F: 735pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote GD30MPS06H nach Preis ab 7.44 EUR bis 10.69 EUR
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GD30MPS06H | GeneSiC Semiconductor |
SiC Schottky Diodes 650V 30A TO-247-2 SiC Schottky MPS |
auf Bestellung 3285 Stücke: Lieferzeit 10-14 Tag (e) |
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GD30MPS06H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 49A TO247-2 Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 49A Capacitance @ Vr, F: 735pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GD30MPS06H |
|
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 650V 30A TO-247-2 SiC Schottky MPS
SiC Schottky Diodes 650V 30A TO-247-2 SiC Schottky MPS
auf Bestellung 3285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.64 EUR |
| 10+ | 9.01 EUR |
| 30+ | 8.43 EUR |
| 120+ | 8.1 EUR |
| 270+ | 7.85 EUR |
| 510+ | 7.58 EUR |
| 2520+ | 7.44 EUR |
| GD30MPS06H |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 49A TO247-2
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 49A
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 650V 49A TO247-2
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 49A
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.69 EUR |
| 10+ | 9.56 EUR |
| 25+ | 9.14 EUR |
| 100+ | 8.53 EUR |