GD2X60MPS06N GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 55.14 EUR |
| 10+ | 45.72 EUR |
| 30+ | 45.57 EUR |
| 100+ | 43.23 EUR |
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Technische Details GD2X60MPS06N GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 70A SOT-227, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 70A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GD2X60MPS06N nach Preis ab 47.53 EUR bis 58.26 EUR
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GD2X60MPS06N | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MOD SIC 650V 70A SOT-227Current - Reverse Leakage @ Vr: 10 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 70A (DC) Diode Configuration: 2 Independent Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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