Technische Details GD2X60MPS06N GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 70A SOT-227, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 70A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GD2X60MPS06N nach Preis ab 48.65 EUR bis 69.33 EUR
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GD2X60MPS06N | GeneSiC Semiconductor |
 650V 120A SiC Schottky MPS Diode |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X60MPS06N | GeneSiC Semiconductor |
SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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GD2X60MPS06N | GeneSiC Semiconductor |
Description: DIODE MOD SIC 650V 70A SOT-227 Current - Reverse Leakage @ Vr: 10 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 70A (DC) Diode Configuration: 2 Independent Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD2X60MPS06N |
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Hersteller: GeneSiC Semiconductor
650V 120A SiC Schottky MPS Diode
650V 120A SiC Schottky MPS Diode
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 48.65 EUR |
| GD2X60MPS06N |
|
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS
SiC Schottky Diodes 650V 120A SOT-227 SiC Schottky MPS
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 62.61 EUR |
| 10+ | 57.51 EUR |
| 30+ | 56.07 EUR |
| GD2X60MPS06N |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 70A SOT-227
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 70A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MOD SIC 650V 70A SOT-227
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 70A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 69.33 EUR |
| 10+ | 63.68 EUR |
| 25+ | 61.56 EUR |
| 100+ | 58.51 EUR |
| 250+ | 56.56 EUR |