GE06MPS06E GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 3.73 EUR |
| 10+ | 3.24 EUR |
| 25+ | 3.06 EUR |
| 50+ | 2.82 EUR |
| 100+ | 2.66 EUR |
| 250+ | 2.57 EUR |
| 500+ | 2.45 EUR |
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Technische Details GE06MPS06E GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 17A, Capacitance @ Vr, F: 279pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Cut Tape (CT), Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Discontinued at Digi-Key.
Weitere Produktangebote GE06MPS06E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| GE06MPS06E | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 650V 17A TO252-2Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 17A Capacitance @ Vr, F: 279pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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GE06MPS06E | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO252-2 Max. forward voltage: 1.25V Max. forward impulse current: 27A Kind of package: reel; tape |
Produkt ist nicht verfügbar |