GE06MPS06E GeneSiC Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 3.86 EUR |
| 25+ | 3.64 EUR |
| 50+ | 3.36 EUR |
| 100+ | 3.17 EUR |
| 250+ | 3.06 EUR |
| 500+ | 2.92 EUR |
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Technische Details GE06MPS06E GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 17A, Capacitance @ Vr, F: 279pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Cut Tape (CT), Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Discontinued at Digi-Key.
Weitere Produktangebote GE06MPS06E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GE06MPS06E | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 650V 17A TO252-2Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 17A Capacitance @ Vr, F: 279pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
GE06MPS06E | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO252-2 Max. forward voltage: 1.25V Max. forward impulse current: 27A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GE06MPS06E |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Discontinued at Digi-Key
Description: DIODE SIL CARB 650V 17A TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GE06MPS06E |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO252-2
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO252-2
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH