GD30MPS06J GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Max. off-state voltage: 650V
Load current: 30A
Max. forward impulse current: 0.168kA
Case: TO263-7
Kind of package: tube
Max. forward voltage: 1.5V
Mounting: SMD
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
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Technische Details GD30MPS06J GeneSiC SEMICONDUCTOR
Description: DIODE SIL CARB 650V 51A TO263-7, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263-7, Current - Average Rectified (Io): 51A, Capacitance @ Vr, F: 735pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Packaging: Tube.
Weitere Produktangebote GD30MPS06J nach Preis ab 10.28 EUR bis 13.91 EUR
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GD30MPS06J | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 51A TO263-7 Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-7 Current - Average Rectified (Io): 51A Capacitance @ Vr, F: 735pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tube |
auf Bestellung 733 Stücke: Lieferzeit 10-14 Tag (e) |
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GD30MPS06J | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 30A TO-263-7 SiC Schottky MPS |
auf Bestellung 1807 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD30MPS06J |
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Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 51A TO263-7
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
Description: DIODE SIL CARB 650V 51A TO263-7
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-7
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.45 EUR |
| 10+ | 12.04 EUR |
| 25+ | 11.53 EUR |
| 100+ | 10.94 EUR |
| GD30MPS06J |
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Hersteller: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 650V 30A TO-263-7 SiC Schottky MPS
Schottky Diodes & Rectifiers 650V 30A TO-263-7 SiC Schottky MPS
auf Bestellung 1807 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.91 EUR |
| 10+ | 12.46 EUR |
| 25+ | 11.94 EUR |
| 100+ | 11.14 EUR |
| 250+ | 10.66 EUR |
| 500+ | 10.33 EUR |
| 1000+ | 10.28 EUR |