GD50MPS12H GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 23.18 EUR |
| 10+ | 20.7 EUR |
| 30+ | 19.68 EUR |
| 120+ | 18.92 EUR |
| 270+ | 18.39 EUR |
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Technische Details GD50MPS12H GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 92A TO247-2, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 15 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 92A, Capacitance @ Vr, F: 1835pF @ 1V, 1MHz.
Weitere Produktangebote GD50MPS12H nach Preis ab 20.47 EUR bis 25.63 EUR
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GD50MPS12H | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1.2KV 92A TO247-2Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 15 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 92A Capacitance @ Vr, F: 1835pF @ 1V, 1MHz |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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