Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5625) > Seite 18 nach 94
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MURT10020R | GeneSiC Semiconductor |
 Description: DIODE ARRAY GP REV POLAR 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT10040 | GeneSiC Semiconductor |
Description: DIODE ARRAY GP 400V 50A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT10040R | GeneSiC Semiconductor |
Description: DIODE ARRAY GP REV POLAR3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT10060 | GeneSiC Semiconductor |
Description: DIODE ARRAY GP 600V 50A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT10060R | GeneSiC Semiconductor |
Description: DIODE ARRAY GP REV POLAR 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard, Reverse Polarity Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT20005 | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A 3TOWER |
Produkt ist nicht verfügbar |
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MURT20005R | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 200A 3TOWER |
Produkt ist nicht verfügbar |
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MURT20010 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT20010R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 100V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT20020 | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT20020R | GeneSiC Semiconductor |
Description: DIODE MODULE GP 200V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT20040 | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A 3TOWER |
Produkt ist nicht verfügbar |
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MURT20040R | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 200A 3TOWER |
Produkt ist nicht verfügbar |
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MURT20060 | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT20060R | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 100A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURT30005 | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30005R | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30010 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30010R | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30020 | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30020R | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30040 | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30040R | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30060 | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT30060R | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 300A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40005 | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40005R | GeneSiC Semiconductor |
Description: DIODE MODULE 50V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40010 | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40010R | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40020 | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40020R | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40060 | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURT40060R | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 400A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA50020 | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 500A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA50020R | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 500A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA50040 | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 500A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA50040R | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 500A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA50060 | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 500A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA50060R | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 500A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA60020 | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURTA60020R | GeneSiC Semiconductor |
Description: DIODE MODULE 200V 300A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
Produkt ist nicht verfügbar |
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MURTA60040 | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 600A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA60040R | GeneSiC Semiconductor |
Description: DIODE MODULE 400V 600A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA60060 | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 600A 3TOWER |
Produkt ist nicht verfügbar |
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MURTA60060R | GeneSiC Semiconductor |
Description: DIODE MODULE 600V 600A 3TOWER |
Produkt ist nicht verfügbar |
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| S12BR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 12A DO4 |
Produkt ist nicht verfügbar |
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S12D | GeneSiC Semiconductor |
Description: DIODE GEN PURP 200V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12DR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 200V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12G | GeneSiC Semiconductor |
Description: DIODE GEN PURP 400V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12GR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 400V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12J | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12JR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 600V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12K | GeneSiC Semiconductor |
Description: DIODE GEN PURP 800V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12KR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 800V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12M | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1000V 12A DO4 |
Produkt ist nicht verfügbar |
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| S12MR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1KV 12A DO4 |
Produkt ist nicht verfügbar |
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S12Q | GeneSiC Semiconductor |
Description: DIODE GEN PURP 1.2KV 12A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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| S12QR | GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 1.2KV 12A DO4 |
Produkt ist nicht verfügbar |
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| S150J | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 150A DO205AA |
Produkt ist nicht verfügbar |
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| S150JR | GeneSiC Semiconductor |
Description: DIODE GEN PURP 600V 150A DO205AA |
Produkt ist nicht verfügbar |
| MURT10020R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT10040 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY GP 400V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE ARRAY GP 400V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT10040R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY GP REV POLAR3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE ARRAY GP REV POLAR3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT10060 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY GP 600V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE ARRAY GP 600V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT10060R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE ARRAY GP REV POLAR 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT20005 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
Description: DIODE MODULE 50V 200A 3TOWER
Produkt ist nicht verfügbar
| MURT20005R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 200A 3TOWER
Description: DIODE MODULE 50V 200A 3TOWER
Produkt ist nicht verfügbar
| MURT20010 |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT20010R |
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Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 100V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT20020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT20020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT20040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 3TOWER
Description: DIODE MODULE 400V 200A 3TOWER
Produkt ist nicht verfügbar
| MURT20040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 200A 3TOWER
Description: DIODE MODULE 400V 200A 3TOWER
Produkt ist nicht verfügbar
| MURT20060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT20060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURT30005 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
Description: DIODE MODULE 50V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30005R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 300A 3TOWER
Description: DIODE MODULE 50V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30010 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Description: DIODE MODULE 100V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30010R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 3TOWER
Description: DIODE MODULE 100V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Description: DIODE MODULE 200V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Description: DIODE MODULE 200V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 3TOWER
Description: DIODE MODULE 400V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 300A 3TOWER
Description: DIODE MODULE 400V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
Description: DIODE MODULE 600V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT30060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 300A 3TOWER
Description: DIODE MODULE 600V 300A 3TOWER
Produkt ist nicht verfügbar
| MURT40005 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
Description: DIODE MODULE 50V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40005R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 50V 400A 3TOWER
Description: DIODE MODULE 50V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40010 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Description: DIODE MODULE 100V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40010R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
Description: DIODE MODULE 100V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
Description: DIODE MODULE 200V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 400A 3TOWER
Description: DIODE MODULE 200V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
Description: DIODE MODULE 600V 400A 3TOWER
Produkt ist nicht verfügbar
| MURT40060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 400A 3TOWER
Description: DIODE MODULE 600V 400A 3TOWER
Produkt ist nicht verfügbar
| MURTA50020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 500A 3TOWER
Description: DIODE MODULE 200V 500A 3TOWER
Produkt ist nicht verfügbar
| MURTA50020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 500A 3TOWER
Description: DIODE MODULE 200V 500A 3TOWER
Produkt ist nicht verfügbar
| MURTA50040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 500A 3TOWER
Description: DIODE MODULE 400V 500A 3TOWER
Produkt ist nicht verfügbar
| MURTA50040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 500A 3TOWER
Description: DIODE MODULE 400V 500A 3TOWER
Produkt ist nicht verfügbar
| MURTA50060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 500A 3TOWER
Description: DIODE MODULE 600V 500A 3TOWER
Produkt ist nicht verfügbar
| MURTA50060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 500A 3TOWER
Description: DIODE MODULE 600V 500A 3TOWER
Produkt ist nicht verfügbar
| MURTA60020 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURTA60020R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE 200V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Produkt ist nicht verfügbar
| MURTA60040 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 600A 3TOWER
Description: DIODE MODULE 400V 600A 3TOWER
Produkt ist nicht verfügbar
| MURTA60040R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 400V 600A 3TOWER
Description: DIODE MODULE 400V 600A 3TOWER
Produkt ist nicht verfügbar
| MURTA60060 |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 600A 3TOWER
Description: DIODE MODULE 600V 600A 3TOWER
Produkt ist nicht verfügbar
| MURTA60060R |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE MODULE 600V 600A 3TOWER
Description: DIODE MODULE 600V 600A 3TOWER
Produkt ist nicht verfügbar
| S12BR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 12A DO4
Description: DIODE GEN PURP REV 100V 12A DO4
Produkt ist nicht verfügbar
| S12D |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 12A DO4
Description: DIODE GEN PURP 200V 12A DO4
Produkt ist nicht verfügbar
| S12DR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO4
Description: DIODE GEN PURP REV 200V 12A DO4
Produkt ist nicht verfügbar
| S12G |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
Produkt ist nicht verfügbar
| S12GR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Description: DIODE GEN PURP REV 400V 12A DO4
Produkt ist nicht verfügbar
| S12J |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
Produkt ist nicht verfügbar
| S12JR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 12A DO4
Description: DIODE GEN PURP REV 600V 12A DO4
Produkt ist nicht verfügbar
| S12K |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
Description: DIODE GEN PURP 800V 12A DO4
Produkt ist nicht verfügbar
| S12KR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
Description: DIODE GEN PURP REV 800V 12A DO4
Produkt ist nicht verfügbar
| S12M |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1000V 12A DO4
Description: DIODE GEN PURP 1000V 12A DO4
Produkt ist nicht verfügbar
| S12MR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1KV 12A DO4
Description: DIODE GEN PURP REV 1KV 12A DO4
Produkt ist nicht verfügbar
| S12Q |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1.2KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 1.2KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
| S12QR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.2KV 12A DO4
Description: DIODE GEN PURP REV 1.2KV 12A DO4
Produkt ist nicht verfügbar
| S150J |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar
| S150JR |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
Produkt ist nicht verfügbar