Technische Details GA05JT01-46 GeneSiC Semiconductor
Description: TRANS SJT 100V 9A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: 210°C, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 100V, Current Drain (Id) - Max: 5.8 A, Supplier Device Package: TO-46, Drain to Source Voltage (Vdss): 100 V, Power - Max: 20 W, Resistance - RDS(On): 240 mOhms.
Weitere Produktangebote GA05JT01-46
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
GA05JT01-46 | Hersteller : GeneSiC Semiconductor |
Description: TRANS SJT 100V 9A TO46Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Operating Temperature: 210°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 100V Current Drain (Id) - Max: 5.8 A Supplier Device Package: TO-46 Drain to Source Voltage (Vdss): 100 V Power - Max: 20 W Resistance - RDS(On): 240 mOhms |
Produkt ist nicht verfügbar |
