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Technische Details GA05JT01-46 GeneSiC Semiconductor
Description: TRANS SJT 100V 9A TO46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: 210°C, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 100V, Current Drain (Id) - Max: 5.8 A, Supplier Device Package: TO-46, Drain to Source Voltage (Vdss): 100 V, Power - Max: 20 W, Resistance - RDS(On): 240 mOhms.
Weitere Produktangebote GA05JT01-46
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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GA05JT01-46 | GeneSiC Semiconductor |
 Description: TRANS SJT 100V 9A TO46Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Operating Temperature: 210°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 100V Current Drain (Id) - Max: 5.8 A Supplier Device Package: TO-46 Drain to Source Voltage (Vdss): 100 V Power - Max: 20 W Resistance - RDS(On): 240 mOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GA05JT01-46 |
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Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 100V 9A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: 210°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 100V
Current Drain (Id) - Max: 5.8 A
Supplier Device Package: TO-46
Drain to Source Voltage (Vdss): 100 V
Power - Max: 20 W
Resistance - RDS(On): 240 mOhms
Description: TRANS SJT 100V 9A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: 210°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 100V
Current Drain (Id) - Max: 5.8 A
Supplier Device Package: TO-46
Drain to Source Voltage (Vdss): 100 V
Power - Max: 20 W
Resistance - RDS(On): 240 mOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH