G3R75MT12J GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 42A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Description: SIC MOSFET N-CH 42A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.74 EUR |
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Technische Details G3R75MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 42A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V, Power Dissipation (Max): 224W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 7.5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V.
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Verfügbarkeit |
Preis ohne MwSt |
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G3R75MT12J | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
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G3R75MT12J | Hersteller : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
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G3R75MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
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G3R75MT12J | Hersteller : GeneSiC Semiconductor | MOSFET 1200V 75mO TO-263-7 G3R SiC MOSFET |
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G3R75MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |