G3R75MT12J GeneSiC Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 50+ | 7.6 EUR |
| 100+ | 7.31 EUR |
| 250+ | 7.02 EUR |
| 500+ | 6.66 EUR |
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Technische Details G3R75MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 42A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V, Power Dissipation (Max): 224W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 7.5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V.
Weitere Produktangebote G3R75MT12J nach Preis ab 7.33 EUR bis 22.04 EUR
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G3R75MT12J | GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12J | GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 42A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 224W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 7.5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
| G3R75MT12J |
|
Hersteller: GeneSiC Semiconductor
Silicon Carbide MOSFET N Channel Enhancement Mode
Silicon Carbide MOSFET N Channel Enhancement Mode
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 7.88 EUR |
| 100+ | 7.76 EUR |
| 250+ | 7.58 EUR |
| 500+ | 7.33 EUR |
| G3R75MT12J |
|
Hersteller: GeneSiC Semiconductor
Silicon Carbide MOSFET N Channel Enhancement Mode
Silicon Carbide MOSFET N Channel Enhancement Mode
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 15.97 EUR |
| 13+ | 13.76 EUR |
| 50+ | 10.5 EUR |
| G3R75MT12J |
|
Hersteller: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 42A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Description: SIC MOSFET N-CH 42A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.04 EUR |