GA04JT17-247 GeneSiC Semiconductor

Description: TRANS SJT 1700V 4A TO247AB, Drain to Source Voltage (Vdss): 1700 V, Supplier Device Package: TO-247AB, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C), Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.