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G3R75MT12J-TR

G3R75MT12J-TR GeneSiC Semiconductor

G3R75MT12J.pdf Hersteller: GeneSiC Semiconductor
Description: 1200V 75M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 196W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 10mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1545 pF @ 800 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+13.55 EUR
Mindestbestellmenge: 800
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Technische Details G3R75MT12J-TR GeneSiC Semiconductor

Description: 1200V 75M TO-263-7 G3R SIC MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V, Power Dissipation (Max): 196W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 10mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1545 pF @ 800 V.

Weitere Produktangebote G3R75MT12J-TR nach Preis ab 13.99 EUR bis 17.93 EUR

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G3R75MT12J-TR G3R75MT12J-TR Hersteller : GeneSiC Semiconductor G3R75MT12J.pdf Description: 1200V 75M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 196W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 10mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1545 pF @ 800 V
auf Bestellung 5968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.93 EUR
10+ 16.16 EUR
25+ 15.5 EUR
100+ 14.58 EUR
250+ 13.99 EUR
G3R75MT12J-TR G3R75MT12J-TR Hersteller : GeneSiC Semiconductor G3R75MT12J-2449780.pdf MOSFET 1200V 75mohm TO-263-7 G3R SiC MOSFET
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