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MBR120200CTR MBR120200CTR mbr120150ct.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 60A 2 TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR200150CT mbr200150ct.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 100A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3mA @ 150V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR200150CTR mbr200150ct.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 100A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR200200CT mbr200150ct.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR200200CTR mbr200150ct.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FST16020L FST16020L GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 80A TO249AB
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FST16030L FST16030L fst16030l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 80A TO249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FST16035L FST16035L fst16035l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 80A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FST16040L FST16040L fst16040l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 80A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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FST16045L FST16045L fst16045l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 80A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT400150 MBRT400150 mbrt400150_thru_mbrt400200r.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR300150CT mbr300150ct_thru_mbr300200ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300150CTR mbr300150ct_thru_mbr300200ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300200CT mbr300150ct_thru_mbr300200ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR300200CTR mbr300150ct_thru_mbr300200ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30020CTL MBR30020CTL mbr30020ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30020CTRL MBR30020CTRL mbr30020ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30030CTL MBR30030CTL GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CTRL MBR30030CTRL GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30035CTL MBR30035CTL GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30035CTRL MBR30035CTRL GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30040CTL mbr30040ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30040CTRL mbr30040ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30045CTL MBR30045CTL mbr30045ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR30045CTRL mbr30045ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MSRT200100(A)D MSRT200100(A)D msrt20060(a)d_thru_msrt200100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MSRT200120(A)D MSRT200120(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1.2KV 200A 3 TOWER
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MSRT200140(A)D MSRT200140(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1.4KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1400V (1.4kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MSRT200160(A)D MSRT200160(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1.6KV 200A 3 TOWER
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MSRT20060(A)D MSRT20060(A)D msrt200100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MSRT20080(A)D MSRT20080(A)D msrt20060(a)d_thru_msrt200100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 800V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT40020L MBRT40020L mbrt40020(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020RL MBRT40020RL mbrt40020(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030L MBRT40030L mbrt40030(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 200A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030RL MBRT40030RL mbrt40030(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 200A 3 TOWER
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035L MBRT40035L mbrt40035(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035RL MBRT40035RL mbrt40035(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040L MBRT40040L GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 200A 3 TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040RL MBRT40040RL GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 200A 3 TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40045L MBRT40045L mbrt40045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40045RL MBRT40045RL mbrt40045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200100(A)D MSRTA200100(A)D msrta20060(a)d_thru_msrta200100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Diode Configuration: 1 Pair Series Connection
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200120(A)D MSRTA200120(A)D msrta200120(a)d_thru_msrta200160(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1.2KV 200A 3 TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200140(A)D MSRTA200140(A)D msrta200120(a)d_thru_msrta200160(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1.4KV 200A 3 TOWER
Supplier Device Package: Three Tower
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1400V (1.4kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200160(A)D MSRTA200160(A)D msrta200120(a)d_thru_msrta200160(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN 1.6KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA20060(A)D MSRTA20060(A)D msrta20060(a)d_thru_msrta200100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA20080(A)D MSRTA20080(A)D msrta200100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 800V 200A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40020CTL MBR40020CTL mbr40020ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40020CTRL MBR40020CTRL mbr40020ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40030CTL MBR40030CTL mbr40030ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40030CTRL MBR40030CTRL mbr40030ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40035CTL MBR40035CTL mbr40035ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40035CTRL MBR40035CTRL mbr40035ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40040CTL MBR40040CTL mbr40040ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 200A 2 TOWER
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40040CTRL MBR40040CTRL mbr40040ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTL MBR40045CTL mbr40045ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTRL MBR40045CTRL mbr40045ct(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30020L MBRT30020L mbrt30020(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 150A 3 TOWER
Voltage - DC Reverse (Vr) (Max): 20V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30020RL MBRT30020RL mbrt30020(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 20V 150A 3 TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30030L MBRT30030L mbrt30030(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 150A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30030RL MBRT30030RL mbrt30030(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 30V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30035L MBRT30035L mbrt30035(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30035RL MBRT30035RL mbrt30035(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 35V 150A 3 TOWER
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 35V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Diode Type: Schottky
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30040L MBRT30040L mbrt30040(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30040RL MBRT30040RL mbrt30040(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 40V 150A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30045L MBRT30045L mbrt30045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30045RL MBRT30045RL mbrt30045(r)l.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 45V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA30060(A)D MSRTA30060(A)D msrta30060(a)d_thru_msrta300100(a)d.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 300A 3 TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Configuration: 1 Pair Series Connection
Current - Reverse Leakage @ Vr: 20µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
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MSRTA30080(A)D MSRTA30080(A)D www.genesicsemi.com GeneSiC Semiconductor Description: DIODE GEN PURP 800V 300A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR500150CT MBR500150CT mbr500150ct_thru_mbr500200ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 250A 2 TOWER
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR500150CTR MBR500150CTR mbr500150ct_thru_mbr500200ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 250A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500200CT MBR500200CT mbr500150ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 250A 2 TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR500200CTR MBR500200CTR mbr500150ctr.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 250A 2 TOWER
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT500150 MBRT500150 mbrt500150.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 250A 3 TOWER
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBRT500150R MBRT500150R mbrt500150.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 150V 250A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500200 MBRT500200 mbrt500150.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 250A 3 TOWER
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500200R MBRT500200R mbrt500150.pdf GeneSiC Semiconductor Description: DIODE SCHOTTKY 200V 250A 3 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA200120 MURTA200120 murta20060_thru_murta200120r.pdf GeneSiC Semiconductor Description: DIODE GEN 1.2KV 100A 3 TOWER
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURTA200120R MURTA200120R murta20060_thru_murta200120r.pdf GeneSiC Semiconductor Description: DIODE GEN 1.2KV 100A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20020 MURTA20020 murta20020_thru_murta20040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20020R MURTA20020R murta20020_thru_murta20040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20040 MURTA20040 murta20020_thru_murta20040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20040R MURTA20040R murta20020_thru_murta20040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 100A 3 TOWER
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURTA20060 MURTA20060 murta20060_thru_murta200120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20060R MURTA20060R murta20060_thru_murta200120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA300120 MURTA300120 murta30060_thru_murta300120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 150A
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA300120R MURTA300120R murta30060_thru_murta300120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30020 MURTA30020 murta30020_thru_murta30040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30020R MURTA30020R murta30020_thru_murta30040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30040 MURTA30040 murta30020_thru_murta30040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURTA30040R MURTA30040R murta30020_thru_murta30040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURTA30060 MURTA30060 murta30060_thru_murta300120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30060R MURTA30060R murta30060_thru_murta300120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURTA400120 MURTA400120 murta400120.pdf GeneSiC Semiconductor Description: DIODE GEN 1.2KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA400120R MURTA400120R murta400120.pdf GeneSiC Semiconductor Description: DIODE GEN 1.2KV 200A 3 TOWER
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MURTA400120
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 200A
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40020 MURTA40020 murta40020_thru_murta40040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40020R MURTA40020R murta40020_thru_murta40040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 200V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40040 MURTA40040 murta40020_thru_murta40040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MURTA40040R MURTA40040R murta40020_thru_murta40040r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 400V 200A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40060 MURTA40060 murta40060_thru_murta400120r.pdf GeneSiC Semiconductor Description: DIODE GEN PURP 600V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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MBR120200CTR mbr120150ct.pdf
MBR120200CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 60A 2 TOWER
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Bulk
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Anode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200150CT mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 100A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3mA @ 150V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200150CTR mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 100A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200200CT mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR200200CTR mbr200150ct.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 100A 2 TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16020L
FST16020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A TO249AB
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16030L fst16030l.pdf
FST16030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A TO249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16035L fst16035l.pdf
FST16035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16040L fst16040l.pdf
FST16040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16045L fst16045l.pdf
FST16045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A TO249AB
Supplier Device Package: TO-249AB
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Current - Average Rectified (Io) (per Diode): 80A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT400150 mbrt400150_thru_mbrt400200r.pdf
MBRT400150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300150CT mbr300150ct_thru_mbr300200ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300150CTR mbr300150ct_thru_mbr300200ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300200CT mbr300150ct_thru_mbr300200ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR300200CTR mbr300150ct_thru_mbr300200ctr.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 150A 2 TOWER
Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30020CTL mbr30020ct(r)l.pdf
MBR30020CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30020CTRL mbr30020ct(r)l.pdf
MBR30020CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CTL
MBR30030CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30030CTRL
MBR30030CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30035CTL
MBR30035CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30035CTRL
MBR30035CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 2 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30040CTL mbr30040ct(r)l.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30040CTRL mbr30040ct(r)l.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 2 TOWER
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30045CTL mbr30045ct(r)l.pdf
MBR30045CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR30045CTRL mbr30045ct(r)l.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRT200100(A)D msrt20060(a)d_thru_msrt200100(a)d.pdf
MSRT200100(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRT200120(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf
MSRT200120(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRT200140(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf
MSRT200140(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1400V (1.4kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRT200160(A)D msrt200120(a)d_thru_msrt200160(a)d.pdf
MSRT200160(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 200A 3 TOWER
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRT20060(A)D msrt200100(a)d.pdf
MSRT20060(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRT20080(A)D msrt20060(a)d_thru_msrt200100(a)d.pdf
MSRT20080(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020L mbrt40020(r)l.pdf
MBRT40020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40020RL mbrt40020(r)l.pdf
MBRT40020RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030L mbrt40030(r)l.pdf
MBRT40030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40030RL mbrt40030(r)l.pdf
MBRT40030RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 3 TOWER
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035L mbrt40035(r)l.pdf
MBRT40035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40035RL mbrt40035(r)l.pdf
MBRT40035RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040L
MBRT40040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 3 TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40040RL
MBRT40040RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 3 TOWER
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40045L mbrt40045(r)l.pdf
MBRT40045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT40045RL mbrt40045(r)l.pdf
MBRT40045RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200100(A)D msrta20060(a)d_thru_msrta200100(a)d.pdf
MSRTA200100(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Diode Configuration: 1 Pair Series Connection
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200120(A)D msrta200120(a)d_thru_msrta200160(a)d.pdf
MSRTA200120(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200140(A)D msrta200120(a)d_thru_msrta200160(a)d.pdf
MSRTA200140(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.4KV 200A 3 TOWER
Supplier Device Package: Three Tower
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1400V (1.4kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA200160(A)D msrta200120(a)d_thru_msrta200160(a)d.pdf
MSRTA200160(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.6KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV)
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA20060(A)D msrta20060(a)d_thru_msrta200100(a)d.pdf
MSRTA20060(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA20080(A)D msrta200100(a)d.pdf
MSRTA20080(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 200A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40020CTL mbr40020ct(r)l.pdf
MBR40020CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40020CTRL mbr40020ct(r)l.pdf
MBR40020CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40030CTL mbr40030ct(r)l.pdf
MBR40030CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40030CTRL mbr40030ct(r)l.pdf
MBR40030CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40035CTL mbr40035ct(r)l.pdf
MBR40035CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40035CTRL mbr40035ct(r)l.pdf
MBR40035CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40040CTL mbr40040ct(r)l.pdf
MBR40040CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 2 TOWER
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40040CTRL mbr40040ct(r)l.pdf
MBR40040CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTL mbr40045ct(r)l.pdf
MBR40045CTL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR40045CTRL mbr40045ct(r)l.pdf
MBR40045CTRL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 200A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30020L mbrt30020(r)l.pdf
MBRT30020L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 3 TOWER
Voltage - DC Reverse (Vr) (Max): 20V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30020RL mbrt30020(r)l.pdf
MBRT30020RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 150A 3 TOWER
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30030L mbrt30030(r)l.pdf
MBRT30030L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Three Tower
Package / Case: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30030RL mbrt30030(r)l.pdf
MBRT30030RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30035L mbrt30035(r)l.pdf
MBRT30035L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 35V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30035RL mbrt30035(r)l.pdf
MBRT30035RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 150A 3 TOWER
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 35V
Supplier Device Package: Three Tower
Package / Case: Three Tower
Diode Type: Schottky
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 35V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30040L mbrt30040(r)l.pdf
MBRT30040L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30040RL mbrt30040(r)l.pdf
MBRT30040RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 150A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Supplier Device Package: Three Tower
Package / Case: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30045L mbrt30045(r)l.pdf
MBRT30045L
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT30045RL mbrt30045(r)l.pdf
MBRT30045RL
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA30060(A)D msrta30060(a)d_thru_msrta300100(a)d.pdf
MSRTA30060(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 300A 3 TOWER
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Configuration: 1 Pair Series Connection
Current - Reverse Leakage @ Vr: 20µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSRTA30080(A)D www.genesicsemi.com
MSRTA30080(A)D
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 300A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500150CT mbr500150ct_thru_mbr500200ctr.pdf
MBR500150CT
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 250A 2 TOWER
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500150CTR mbr500150ct_thru_mbr500200ctr.pdf
MBR500150CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 250A 2 TOWER
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 3mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500200CT mbr500150ctr.pdf
MBR500200CT
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 250A 2 TOWER
Package / Case: Twin Tower
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Twin Tower
Current - Average Rectified (Io) (per Diode): 250A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBR500200CTR mbr500150ctr.pdf
MBR500200CTR
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 250A 2 TOWER
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Packaging: Bulk
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 250 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500150 mbrt500150.pdf
MBRT500150
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 250A 3 TOWER
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Supplier Device Package: Three Tower
Package / Case: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500150R mbrt500150.pdf
MBRT500150R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 150V 250A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500200 mbrt500150.pdf
MBRT500200
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 250A 3 TOWER
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRT500200R mbrt500150.pdf
MBRT500200R
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 200V 250A 3 TOWER
Manufacturer: GeneSiC Semiconductor
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 250A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA200120 murta20060_thru_murta200120r.pdf
MURTA200120
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 100A 3 TOWER
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Diode Configuration: 1 Pair Common Cathode
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA200120R murta20060_thru_murta200120r.pdf
MURTA200120R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 100A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20020 murta20020_thru_murta20040r.pdf
MURTA20020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20020R murta20020_thru_murta20040r.pdf
MURTA20020R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20040 murta20020_thru_murta20040r.pdf
MURTA20040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20040R murta20020_thru_murta20040r.pdf
MURTA20040R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 100A 3 TOWER
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20060 murta20060_thru_murta200120r.pdf
MURTA20060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA20060R murta20060_thru_murta200120r.pdf
MURTA20060R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 100A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA300120 murta30060_thru_murta300120r.pdf
MURTA300120
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 150A
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA300120R murta30060_thru_murta300120r.pdf
MURTA300120R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30020 murta30020_thru_murta30040r.pdf
MURTA30020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30020R murta30020_thru_murta30040r.pdf
MURTA30020R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30040 murta30020_thru_murta30040r.pdf
MURTA30040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30040R murta30020_thru_murta30040r.pdf
MURTA30040R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30060 murta30060_thru_murta300120r.pdf
MURTA30060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA30060R murta30060_thru_murta300120r.pdf
MURTA30060R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 150A 3 TOWER
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA400120 murta400120.pdf
MURTA400120
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA400120R murta400120.pdf
MURTA400120R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 200A 3 TOWER
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Anode
Part Status: Active
Packaging: Bulk
Manufacturer: GeneSiC Semiconductor
Base Part Number: MURTA400120
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 200A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40020 murta40020_thru_murta40040r.pdf
MURTA40020
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40020R murta40020_thru_murta40040r.pdf
MURTA40020R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40040 murta40020_thru_murta40040r.pdf
MURTA40040
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40040R murta40020_thru_murta40040r.pdf
MURTA40040R
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 200A 3 TOWER
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Supplier Device Package: Three Tower
Package / Case: Three Tower
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MURTA40060 murta40060_thru_murta400120r.pdf
MURTA40060
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 200A 3 TOWER
Supplier Device Package: Three Tower
Package / Case: Three Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 25µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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