Weitere Produktangebote G3R160MT17D nach Preis ab 10.93 EUR bis 26.49 EUR
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G3R160MT17D | Hersteller : GeneSiC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 175W Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 21nC On-state resistance: 0.16Ω Drain current: 15A Pulsed drain current: 48A Power dissipation: 175W Drain-source voltage: 1.7kV Kind of channel: enhancement Technology: G3R™; SiC |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT17D | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V |
auf Bestellung 1018 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R160MT17D | Hersteller : GeneSiC Semiconductor |
SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET |
auf Bestellung 1940 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R160MT17D | Hersteller : Navitas Semiconductor, Inc. |
Description: SIC MOSFET N-CH 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V |
auf Bestellung 1004 Stücke: Lieferzeit 10-14 Tag (e) |
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