G3F65MT12J-TR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1200V 65M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1298 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Power Dissipation (Max): 171W (Tc)
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 86mOhm @ 15A, 18V
| Anzahl | Preis |
|---|---|
| 800+ | 9.27 EUR |
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Technische Details G3F65MT12J-TR GeneSiC Semiconductor
Description: 1200V 65M TO-263-7 G3F SIC MOSFE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1298 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4.3V @ 10mA, Power Dissipation (Max): 171W (Tc), Current - Continuous Drain (Id) @ 25°C: 37A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 86mOhm @ 15A, 18V.
Weitere Produktangebote G3F65MT12J-TR nach Preis ab 8.8 EUR bis 19.31 EUR
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G3F65MT12J-TR | Hersteller : GeneSiC Semiconductor |
 SiC MOSFETs 1200V 65mohm TO-263-7 G3F SiC MOSFET |
auf Bestellung 1560 Stücke: Lieferzeit 10-14 Tag (e) |
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G3F65MT12J-TR | Hersteller : GeneSiC Semiconductor |
Description: 1200V 65M TO-263-7 G3F SIC MOSFE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1298 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.3V @ 10mA Power Dissipation (Max): 171W (Tc) Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 86mOhm @ 15A, 18V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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