G3R20MT12K GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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Technische Details G3R20MT12K GeneSiC SEMICONDUCTOR
Description: SIC MOSFET N-CH 128A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V, Power Dissipation (Max): 542W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V.
Weitere Produktangebote G3R20MT12K nach Preis ab 36.68 EUR bis 79.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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G3R20MT12K | GeneSiC Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247 |
auf Bestellung 1080 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R20MT12K | GeneSiC Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247 |
auf Bestellung 1090 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R20MT12K | GeneSiC Semiconductor |
SiC MOSFETs 1200V 20mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R20MT12K | Navitas Semiconductor, Inc. |
Description: SIC MOSFET N-CH 128A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V Power Dissipation (Max): 542W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 15mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3R20MT12K |
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Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 40.85 EUR |
| 120+ | 39.38 EUR |
| 270+ | 38.08 EUR |
| G3R20MT12K |
|
Hersteller: GeneSiC Semiconductor
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247
Trans MOSFET N-CH SiC 1.2KV 100A 4-Pin(4+Tab) TO-247
auf Bestellung 1090 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 40.85 EUR |
| 120+ | 38.53 EUR |
| 270+ | 36.68 EUR |
| G3R20MT12K |
|
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 20mohm TO-247-4 G3R SiC MOSFET
SiC MOSFETs 1200V 20mohm TO-247-4 G3R SiC MOSFET
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.99 EUR |
| 10+ | 57.82 EUR |
| 30+ | 54.87 EUR |
| 120+ | 53.55 EUR |
| G3R20MT12K |
|
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 79.63 EUR |
| 30+ | 53.38 EUR |
| 120+ | 50.88 EUR |