 
G3R160MT12D GeneSiC SEMICONDUCTOR
 Hersteller: GeneSiC SEMICONDUCTOR
                                                Hersteller: GeneSiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 845 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 10+ | 7.39 EUR | 
| 11+ | 6.66 EUR | 
| 30+ | 6.42 EUR | 
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Technische Details G3R160MT12D GeneSiC SEMICONDUCTOR
Description: SIC MOSFET N-CH 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V, Power Dissipation (Max): 123W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 5mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V. 
Weitere Produktangebote G3R160MT12D nach Preis ab 4.9 EUR bis 13.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | G3R160MT12D | Hersteller : GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Drain-source voltage: 1.2kV Drain current: 16A Case: TO247-3 On-state resistance: 0.16Ω Pulsed drain current: 40A Power dissipation: 123W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 28nC | auf Bestellung 845 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R160MT12D | Hersteller : GeneSiC Semiconductor |  Silicon Carbide MOSFET N Channel Enhancement Mode | auf Bestellung 510 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R160MT12D | Hersteller : GeneSiC Semiconductor |  Silicon Carbide MOSFET N Channel Enhancement Mode | auf Bestellung 510 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R160MT12D | Hersteller : GeneSiC Semiconductor |  Description: SIC MOSFET N-CH 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V | auf Bestellung 1425 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | G3R160MT12D | Hersteller : GeneSiC Semiconductor |  SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET | auf Bestellung 2658 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | G3R160MT12D | Hersteller : GeneSiC Semiconductor |  Silicon Carbide MOSFET N Channel Enhancement Mode | auf Bestellung 60 Stücke:Lieferzeit 14-21 Tag (e) | 
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| G3R160MT12D Produktcode: 182442 
            
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                Lieblingsprodukt
                 |  Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 1200 V Idd,A: 13 A Rds(on), Ohm: 160 mOhm Ciss, pF/Qg, nC: 724/23 JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||||
| G3R160MT12D | Hersteller : GeneSiC Semiconductor |  Silicon Carbide MOSFET N Channel Enhancement Mode | Produkt ist nicht verfügbar | ||||||||||||||||||
|   | G3R160MT12D | Hersteller : GeneSiC Semiconductor |  Silicon Carbide MOSFET N Channel Enhancement Mode | Produkt ist nicht verfügbar |