G3R160MT12D
Produktcode: 182442
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Lieblingsprodukt
Hersteller:
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 1200 V
Drain-Strom Idd, A: 13 A
Durchlasswiderstand Rds(on), Ohm: 160 mOhm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 724/23
Montage: THT
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Weitere Produktangebote G3R160MT12D nach Preis ab 7.68 EUR bis 17.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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G3R160MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 28nC On-state resistance: 0.16Ω Drain current: 16A Pulsed drain current: 40A Power dissipation: 123W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC |
auf Bestellung 813 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT12D | GeneSiC Semiconductor |
SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET |
auf Bestellung 2658 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R160MT12D | Navitas Semiconductor, Inc. |
Description: SIC MOSFET N-CH 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V |
auf Bestellung 347 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3R160MT12D |
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Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 28nC
On-state resistance: 0.16Ω
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 123W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 28nC
On-state resistance: 0.16Ω
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 123W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
auf Bestellung 813 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.22 EUR |
| 12+ | 7.68 EUR |
| G3R160MT12D |
|
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET
SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET
auf Bestellung 2658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.75 EUR |
| 10+ | 10.09 EUR |
| 30+ | 9.45 EUR |
| 120+ | 9.03 EUR |
| 270+ | 8.71 EUR |
| 510+ | 8.44 EUR |
| 2520+ | 8.32 EUR |
| G3R160MT12D |
|
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.17 EUR |
| 30+ | 10.14 EUR |
| 120+ | 8.59 EUR |