Produkte > GENESIC SEMICONDUCTOR > G3F75MT12J-TR
G3F75MT12J-TR

G3F75MT12J-TR GeneSiC Semiconductor


Hersteller: GeneSiC Semiconductor
Description: 1200V 75M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Power Dissipation (Max): 140W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.3V @ 9mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 18V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.21 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G3F75MT12J-TR GeneSiC Semiconductor

Description: 1200V 75M TO-263-7 G3F SIC MOSFE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-263-7, Power Dissipation (Max): 140W (Tc), Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 4.3V @ 9mA, Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 18V.

Weitere Produktangebote G3F75MT12J-TR nach Preis ab 7.8 EUR bis 17.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G3F75MT12J-TR G3F75MT12J-TR Hersteller : GeneSiC Semiconductor SiC MOSFETs 1200V 75mohm TO-263-7 G3F SiC MOSFET
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.72 EUR
10+9.64 EUR
25+9.24 EUR
100+8.66 EUR
250+8.31 EUR
500+8.04 EUR
800+7.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
G3F75MT12J-TR G3F75MT12J-TR Hersteller : GeneSiC Semiconductor Description: 1200V 75M TO-263-7 G3F SIC MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-263-7
Power Dissipation (Max): 140W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.3V @ 9mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 18V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.6 EUR
10+12.15 EUR
100+9.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH