G3R20MT17N GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTORCategory: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 139.14 EUR |
| 3+ | 139.12 EUR |
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Technische Details G3R20MT17N GeneSiC SEMICONDUCTOR
Description: SIC MOSFET N-CH 100A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V, Power Dissipation (Max): 523W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 15mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V.
Weitere Produktangebote G3R20MT17N nach Preis ab 139.14 EUR bis 227.30 EUR
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G3R20MT17N | Hersteller : GeneSiC SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 70A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 300A Power dissipation: 523W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R20MT17N | Hersteller : GeneSiC Semiconductor |
SiC MOSFETs 1700V 20mohm SOT-227 G3R SiC MOSFET |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R20MT17N | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 100A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V Power Dissipation (Max): 523W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 15mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R20MT17N | Hersteller : GENESIC |
Description: GENESIC - G3R20MT17N - Siliziumkarbid-MOSFET, Eins, n-Kanal, 100 A, 1.7 kV, 0.02 ohm, SOT-227 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 523W Bauform - Transistor: SOT-227 Anzahl der Pins: 4Pin(s) Produktpalette: G3R productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R20MT17N | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |