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G3R160MT17J-TR

G3R160MT17J-TR GeneSiC Semiconductor


G3R160MT17J.pdf Hersteller: GeneSiC Semiconductor
Description: 1700V 160M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 10A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+16.14 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G3R160MT17J-TR GeneSiC Semiconductor

Description: 1700V 160M TO-263-7 G3R SIC MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 10A, 15V, Power Dissipation (Max): 145W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V.

Weitere Produktangebote G3R160MT17J-TR nach Preis ab 16.09 EUR bis 21.23 EUR

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G3R160MT17J-TR G3R160MT17J-TR Hersteller : GeneSiC Semiconductor G3R160MT17J.pdf Description: 1700V 160M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 10A, 15V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
auf Bestellung 939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.07 EUR
10+19.09 EUR
25+18.34 EUR
100+17.29 EUR
250+16.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
G3R160MT17J-TR G3R160MT17J-TR Hersteller : GeneSiC Semiconductor G3R160MT17J-2449134.pdf SiC MOSFETs 1700V 160mohm TO-263-7 G3R SiC MOSFET
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.23 EUR
10+19.24 EUR
25+18.5 EUR
100+17.42 EUR
250+16.74 EUR
500+16.24 EUR
800+16.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH