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G3R30MT12J-TR

G3R30MT12J-TR GeneSiC Semiconductor

G3R30MT12J.pdf Hersteller: GeneSiC Semiconductor
Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
Power Dissipation (Max): 408W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 24mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+28.64 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G3R30MT12J-TR GeneSiC Semiconductor

Description: 1200V 30M TO-263-7 G3R SIC MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V, Power Dissipation (Max): 408W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 24mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V.

Weitere Produktangebote G3R30MT12J-TR nach Preis ab 29.47 EUR bis 38.16 EUR

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G3R30MT12J-TR G3R30MT12J-TR Hersteller : GeneSiC Semiconductor G3R30MT12J.pdf Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
Power Dissipation (Max): 408W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 24mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
auf Bestellung 802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.07 EUR
10+33.69 EUR
25+32.42 EUR
100+30.6 EUR
250+29.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
G3R30MT12J-TR G3R30MT12J-TR Hersteller : GeneSiC Semiconductor G3R30MT12J-3479513.pdf SiC MOSFETs 1200V 30mohm TO-263-7 G3R SiC MOSFET
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.16 EUR
10+34.67 EUR
25+33.39 EUR
100+31.52 EUR
250+30.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH