G3R20MT17K GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 161.74 EUR |
| 10+ | 150.04 EUR |
| 25+ | 145.62 EUR |
| 100+ | 139.18 EUR |
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Technische Details G3R20MT17K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V, Power Dissipation (Max): 809W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 15mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V.
Weitere Produktangebote G3R20MT17K nach Preis ab 158.58 EUR bis 179.24 EUR
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G3R20MT17K | Hersteller : GeneSiC Semiconductor |
SiC MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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