G3R20MT17K GeneSiC Semiconductor
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 162.25 EUR |
| 10+ | 150.5 EUR |
| 30+ | 146.06 EUR |
| 120+ | 143.55 EUR |
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Technische Details G3R20MT17K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V, Power Dissipation (Max): 809W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 15mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V.
Weitere Produktangebote G3R20MT17K nach Preis ab 138.62 EUR bis 165.04 EUR
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G3R20MT17K | Hersteller : Navitas Semiconductor, Inc. |
 Description: SIC MOSFET N-CH 124A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V Power Dissipation (Max): 809W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 15mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R20MT17K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 88A; Idm: 300A; 809W Mounting: THT Case: TO247-4 Gate-source voltage: -5...15V Gate charge: 400nC On-state resistance: 20mΩ Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Drain current: 88A Technology: G3R™; SiC Kind of channel: enhancement Pulsed drain current: 300A Power dissipation: 809W Kind of package: tube Drain-source voltage: 1.7kV Polarisation: unipolar |
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