G3R160MT17J GeneSiC Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 18.33 EUR |
| 10+ | 15.99 EUR |
| 25+ | 14.71 EUR |
| 100+ | 13.24 EUR |
| 250+ | 12.14 EUR |
| 500+ | 11.2 EUR |
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Technische Details G3R160MT17J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 18A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V.
Weitere Produktangebote G3R160MT17J nach Preis ab 11.2 EUR bis 29.67 EUR
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G3R160MT17J | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT17J | Hersteller : GeneSiC Semiconductor |
MOSFET 1700V 160mohm TO-263-7 G3R SiC MOSFET |
auf Bestellung 1065 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R160MT17J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R160MT17J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R160MT17J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R160MT17J | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 18A TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V |
Produkt ist nicht verfügbar |