G3R160MT12J GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: SIC MOSFET N-CH 19A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.23 EUR |
| 10+ | 10.99 EUR |
| 25+ | 10.53 EUR |
| 100+ | 9.89 EUR |
| 250+ | 9.47 EUR |
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Technische Details G3R160MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 19A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ), Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V.
Weitere Produktangebote G3R160MT12J nach Preis ab 10.23 EUR bis 13.2 EUR
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G3R160MT12J | Hersteller : GeneSiC Semiconductor |
MOSFET 1200V 160mO TO-263-7 G3R SiC MOSFET |
auf Bestellung 1247 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R160MT12J | Hersteller : GENESIC |
Description: GENESIC - G3R160MT12J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 22 A, 1.2 kV, 0.16 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.69V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 128W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: G3R productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.16ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 1697 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R160MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R160MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Mounting: SMD On-state resistance: 0.16Ω Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 28nC Kind of package: tube Case: TO263-7 |
Produkt ist nicht verfügbar |