G3R12MT12K GeneSiC Semiconductor

Description: 1200V 12M TO-247-4 G3R SIC MOSFE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 157A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V, Power Dissipation (Max): 567W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 50mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V.