G3R30MT12J GeneSiC Semiconductor
auf Bestellung 1665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 41.54 EUR |
| 10+ | 37.77 EUR |
| 25+ | 36.34 EUR |
| 100+ | 34.64 EUR |
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Technische Details G3R30MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 96A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V, Power Dissipation (Max): 459W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 12mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V.
Weitere Produktangebote G3R30MT12J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G3R30MT12J | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
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| G3R30MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
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G3R30MT12J | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 96A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V Power Dissipation (Max): 459W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 12mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V |
Produkt ist nicht verfügbar |
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G3R30MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Mounting: SMD On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 155nC Kind of package: tube Case: TO263-7 |
Produkt ist nicht verfügbar |