GA03JT12-247 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: TRANS SJT 1200V 3A TO247AB
Resistance - RDS(On): 470 mOhms
Power - Max: 15 W
Drain to Source Voltage (Vdss): 1.2 kV
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 3 A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 800V
FET Type: N-Channel
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details GA03JT12-247 GeneSiC Semiconductor
Description: TRANS SJT 1200V 3A TO247AB, Resistance - RDS(On): 470 mOhms, Power - Max: 15 W, Drain to Source Voltage (Vdss): 1.2 kV, Supplier Device Package: TO-247-3, Current Drain (Id) - Max: 3 A, Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 800V, FET Type: N-Channel, Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote GA03JT12-247
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GA03JT12-247 | Hersteller : GeneSiC Semiconductor |
 JFET SiC Super Junc Trans 1200V-Rds 550mO-3A |
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