Technische Details G3R75MT12K GeneSiC Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W, Pulsed drain current: 80A, Power dissipation: 207W, Gate charge: 54nC, Polarisation: unipolar, Technology: G3R™; SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 29A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...15V, Kind of package: tube, Case: TO247-4, On-state resistance: 75mΩ, Mounting: THT.
Weitere Produktangebote G3R75MT12K nach Preis ab 6.33 EUR bis 26.73 EUR
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G3R75MT12K | GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 540 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Pulsed drain current: 80A Power dissipation: 207W Gate charge: 54nC Polarisation: unipolar Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 29A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...15V Kind of package: tube Case: TO247-4 On-state resistance: 75mΩ Mounting: THT |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | GeneSiC Semiconductor | SiC MOSFETs 1200V 75mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R75MT12K | GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G3R75MT12K |
|
Hersteller: GeneSiC Semiconductor
Silicon Carbide MOSFET N Channel Enhancement Mode
Silicon Carbide MOSFET N Channel Enhancement Mode
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 6.33 EUR |
| G3R75MT12K |
|
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Pulsed drain current: 80A
Power dissipation: 207W
Gate charge: 54nC
Polarisation: unipolar
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
Case: TO247-4
On-state resistance: 75mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Pulsed drain current: 80A
Power dissipation: 207W
Gate charge: 54nC
Polarisation: unipolar
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
Case: TO247-4
On-state resistance: 75mΩ
Mounting: THT
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 10.89 EUR |
| G3R75MT12K |
|
Hersteller: GeneSiC Semiconductor
Silicon Carbide MOSFET N Channel Enhancement Mode
Silicon Carbide MOSFET N Channel Enhancement Mode
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 17.95 EUR |
| 13+ | 13.85 EUR |
| 14+ | 12.86 EUR |
| 50+ | 10.23 EUR |
| G3R75MT12K |
Hersteller: GeneSiC Semiconductor
SiC MOSFETs 1200V 75mohm TO-247-4 G3R SiC MOSFET
SiC MOSFETs 1200V 75mohm TO-247-4 G3R SiC MOSFET
auf Bestellung 754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.4 EUR |
| 10+ | 17.47 EUR |
| 30+ | 16.78 EUR |
| 120+ | 15.76 EUR |
| 270+ | 15.73 EUR |
| G3R75MT12K |
|
Hersteller: GeneSiC Semiconductor
Silicon Carbide MOSFET N Channel Enhancement Mode
Silicon Carbide MOSFET N Channel Enhancement Mode
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 26.73 EUR |