G3R75MT12K GeneSiC Semiconductor
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 5.07 EUR |
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Technische Details G3R75MT12K GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V, Power Dissipation (Max): 207W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 7.5mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V.
Weitere Produktangebote G3R75MT12K nach Preis ab 5.26 EUR bis 22.20 EUR
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G3R75MT12K | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 540 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 80A Power dissipation: 207W Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 529 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R75MT12K | Hersteller : GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 80A Power dissipation: 207W Case: TO247-4 |
auf Bestellung 529 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R75MT12K | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 41A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 207W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 7.5mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V |
auf Bestellung 1446 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R75MT12K | Hersteller : GeneSiC Semiconductor |
SiC MOSFETs 1200V 75mohm TO-247-4 G3R SiC MOSFET |
auf Bestellung 1022 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R75MT12K | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R75MT12K | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |
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G3R75MT12K | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
Produkt ist nicht verfügbar |